Panasonic 2SD1750A, 2SD1750 Datasheet

Po wer Transistors

2SD1750, 2SD1750A

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching
Complementary to 2SB1180 and 2SB1180A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1750
2SD1750A
2SD1750

2SD1750A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

60
80
60
80

7

12

8

15

1.3

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

10.2±0.3

7.2±0.3

+0.3

–0.

10.0

7.2±0.3

7.0±0.3

3.0±0.2

0.8±0.21.0±0.2

4.6±0.4

7.0±0.3

1.1±0.1

123

4.6±0.4

1.1±0.1

0.75±0.1

2.3±0.2

213

2.0±0.2

3.0±0.2

0.75±0.1

2.3±0.2

3.5±0.2

1:Base
2:Collector
3:Emitter
I Type Package

3.5±0.2

1.0 max.

2.5

0.5 max.

1:Base
2:Collector
3:Emitter
I Type Package (Y)

Unit: mm

0.85±0.1

0.4±0.1

Unit: mm

0 to 0.15

0.9±0.1
0 to 0.15

1.01.0

2.5±0.2

2.5±0.2

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1750

2SD1750A
Emitter cutoff current
Collector to emitter
voltage

2SD1750

2SD1750A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

2000 to 5000

4000 to 10000

C

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 60V, IE = 0
VCB = 80V, IE = 0
VEB = 7V, IC = 0

IC = 30mA, IB = 0

VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4V, IB = 8mA
IC = 4V, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 8mA, IB2 = –8mA

Internal Connection

min

60
80

2000

typ

max

100
100

2

10000

Unit

µA

mA

V

500

1.5
2

20

0.5
4
1

C

B

E

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1750, 2SD1750A

PC—Ta IC—V

20

)
W

(

(1)

C

15

10

5

(2)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 301010.3 3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

V

CE(sat)—IC

(P

=1.3W)

C

25˚C

)

IC/IB=500

TC=100˚C

–25˚C

)

CE

12

10

)
A

(

8

C

6

4

Collector current I

2

0

054132

IB=4.0mA

T

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

=25˚C

C

Collector to emitter voltage VCE (V

V

BE(sat)—IC

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 301010.3 3

TC=–25˚C

100˚C

Collector current IC (A

IC/IB=500

25˚C

)

V

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 301010.3 3

)

CE(sat)—IC

Collector current IC (A

hFE—I

100000

30000

FE

10000

3000

1000

300

100

Forward current transfer ratio h

30

10

TC=100˚C

25˚C
–25˚C

0.1 1 10 1000.3 3 30

Collector current IC (A

(1) IC/IB=250
(2) I

C/IB

(3) I

C/IB

=25˚C

T

C

C

=500
=1000

(3)
(2)
(1)

)

VCE=3V

)

Area of safe operation (ASO) R

100

30

I

)

CP

10

A

(

I

C

C

3

1

300ms

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

2SD1750

2SD1750A

Collector to emitter voltage VCE (V

)

3

10

)
˚C/W

2

(

10

(t)

th

10

1

Thermal resistance R

–1

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10