Panasonic 2SD1198A, 2SD1198 Datasheet
Transistor
2SD1198, 2SD1198A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Features
■
●
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: h
= 4000 to 40000.
●
A shunt resistor is omitted from the driver.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1198
2SD1198A
2SD1198
2SD1198A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*1
hFE Rank classification
Rank Q R S
h
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
FE
Symbol
2SD1198
2SD1198A
2SD1198
2SD1198A
2SD1198
2SD1198A
Ratings
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
30
60
25
50
5
1.5
1
1
150
–55 ~ +150
Symbol
I
I
V
V
V
h
V
V
f
CBO
EBO
FE
T
CBO
CEO
EBO
*1
CE(sat)
BE(sat)
VCB = 25V, IE = 0
VCB = 45V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IB = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1A
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
VCB = 10V, IE = –50mA, f = 200MHz
FE
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
*2
*2
*2
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Internal Connection
B
≈200Ω
min
30
60
25
50
4000
typ
5
40000
150
*2
Pulse measurement
C
E
max
100
100
100
1.8
2.2
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Unit
nA
nA
V
V
V
V
V
MHz
1
Transistor
2SD1198, 2SD1198A
PC — Ta V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
5
10
FE
4
10
3
10
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
hFE — I
C
Ta=75˚C
25˚C
–25˚C
VCE=10V
— I
)
100
V
(
30
CE(sat)
10
3
25˚C
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 10003 0.3 3
)
Collector current IC (A
Cob — V
24
)
pF
(
20
ob
16
12
CE(sat)
Ta=75˚C
–25˚C
CB
C
IC/IB=1000
IE=0
f=1MHz
Ta=25˚C
100
)
V
(
30
BE(sat)
10
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
)
V
— I
BE(sat)
3
Ta=–25˚C
1
0.01 0.1 1 10003 0.3 3
C
IC/IB=1000
25˚C
75˚C
Collector current IC (A
)
2
10
Forward current transfer ratio h
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
8
4
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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