Panasonic 2SD1149 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1149

Silicon NPN epitaxial planar type

For low-frequency amplification

■ Features

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

• High emitter-base voltage (Collector open) V

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing

FE

CE(sat)

EBO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

100 V

100 V

15 V

20 mA

50 mA

200 mW

150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking symbol： 1V

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59

Mini3-G1 Package

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

Transition frequency f

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S

h

FE

Publication date: January 2003 SJC00208BED

400 to 800 600 to 1 200

= 10 µA, IE = 0 100 V

= 1 mA, IB = 0 100 V

= 10 µA, IC = 015V

VCB = 60 V, IE = 0 0.1 µA

VCE = 60 V, IB = 0 1.0 µA

VCE = 10 V, IC = 2 mA 400 1 200 

= 10 mA, IB = 1 mA 0.05 0.20 V

VCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz

T

1

2SD1149

This product complies with the RoHS Directive (EU 2002/95/EC).

240

PC  T

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

0.1

CE(sat)

25°C

Ta = 75°C

−25°C

a

C

IC / IB = 10

IC  V

hFE  I

Ta = 75°C

CE

IB = 100 µA

C

25°C

−25°C

Ta = 25°C

80 µA
60 µA

50 µA
40 µA

30 µA

20 µA

10 µA

VCE = 10 V

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

0 2.01.60.4 1.20.8

)

200

)

160

MHz
(

T

120

80

40

Transition frequency f

80

)

60

mA
(

C

40

20

Collector current I

0

)

012108264

Collector-emitter voltage VCE (V

1 800

1 500

FE

1 200

900

600

Forward current transfer ratio h

300

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = 10 V
T

a

)

= 25°C

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

6

Cob  V

(pF)

ob

C

5

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

)

C

22 kΩ

5 kΩ

)

mV
(

100

80

60

40

Collector current IC (mA

NV  I

VCE = 10 V

= 80 dB

G

V

Function = FLAT

= 25°C

T

a

Rg = 100 kΩ

Noise voltage NV

20

0

)

0.01 0.1 1

Collector current IC (mA

)

0

− 0.1 −1 −10 −100

Emitter current IE (mA

)

mV
(

100

NV  V

Rg = 100 kΩ

80

60

40

22 kΩ

5 kΩ

CE

Noise voltage NV

20

0

1 10 100

IC = 1 mA

= 80 dB

G

V

Function = FLAT

= 25°C

T

a

Collector-emitter voltage VCE (V

)

)

SJC00208BED