Panasonic 2SD1030 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.05

0.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SD1030

Silicon NPN epitaxial planer type

For low-frequency amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

●

High emitter to base voltage V

●

Low noise voltage NV.

●

Mini type package, allowing downsizing of the equipment and

EBO

.

automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

50
40
15

100

50
200
150

–55 ~ +150

CE(sat)

.

Unit

V
V

V
mA
mA

mW

˚C
˚C

Unit: mm

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : 1Z

Electrical Characteristics (Ta=25˚C)

■

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

*

hFE Rank classification

Rank R S T

Marking Symbol 1ZR 1ZS 1ZT

Parameter

h

FE

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz

Conditions

400 ~ 800 600 ~ 1200 1000 ~ 2000

min

50
40
15

400

typ

1000

0.05
120

max

100

1

2000

0.2

Unit

nA
µA

V
V
V

V

MHz

1

Transistor

2SD1030

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

012108264

I

Collector to emitter voltage VCE (V

hFE — I

C

1800

FE

1500

1200

900

600

300

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

=100µA

B

90µA
80µA

70µA
60µA

50µA
40µA
30µA

20µA
10µA

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

250

)

200

MHz

(

T

150

100

50

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=75˚C

–25˚C

fT — I

E

Emitter current IE (mA

VCE=10V

VCB=10V
Ta=25˚C

)

)

Cob — V

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)