Panasonic 2SD1010 Datasheet
Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
Features
■
●
High foward current transfer ratio hFE.
●
Low collector to emitter saturation voltage V
●
High emitter to base voltage V
●
Low noise voltage NV.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
.
EBO
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
50
40
15
100
50
300
150
–55 ~ +150
Unit: mm
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
.
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
NV
Rank R S T
h
FE
400 ~ 800 600 ~ 1200 1000 ~ 2000
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
*
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
50
40
15
400
typ
1000
0.05
200
80
max
100
1
2000
0.2
Unit
nA
µA
V
V
V
V
MHz
mV
1
Transistor
2SD1010
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012108264
I
Collector to emitter voltage VCE (V
hFE — I
C
1800
FE
1500
1200
900
600
300
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
=100µA
B
90µA
80µA
70µA
60µA
50µA
40µA
30µA
20µA
10µA
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
250
)
200
MHz
(
T
150
100
50
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
25˚C
Ta=75˚C
–25˚C
fT — I
E
Emitter current IE (mA
VCE=10V
VCB=10V
Ta=25˚C
)
)
Cob — V
8
)
pF
7
(
ob
6
5
4
3
2
1
Collector output capacitance C
0
1 3 10 30 100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
mV
(
Noise voltage NV
)
NV — I
C
100
VCE=10V
G
=80dB
V
Function=FLAT
Ta=25˚C
80
60
40
20
0
0.01 0.03 0.1 0.3 1
Rg=100kΩ
22kΩ
5kΩ
Collector current IC (mA
NV — V
100
80
)
mV
(
60
40
Noise voltage NV
20
)
Rg=100kΩ
0
1 3 10 30 100
Collector to emitter voltage VCE (V
22kΩ
5kΩ
CE
IC=1mA
=80dB
G
V
Function=FLAT
Ta=25˚C
)
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