2fach-Silizium-PIN Fotodiode in SMT
2-Chip Silicon PIN Photodiode in SMT
KOM 2125
KOM 2125 FA
KOM 2125 KOM 2125 FA
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm und bei 880 nm
(KOM 2125 FA)
• Kurze Schaltzeit (typ. 25 ns)
• geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
• SMT-fähig
Anwendungen
• Nachlaufsteuerungen
• Kantenführung
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
KOM 2125 Q62702-K0047
KOM 2125 FA Q62702-P5313
Bestellnummer
Ordering Code
Features
• Especially suitable for applications from
400 nm to 1100 nm and of 880 nm
(KOM 2125 FA)
• Short switching time (typ. 25 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• Suitable for SMT
Applications
• Follow-up controls
• Edge drives
• Industrial electronics
• For control and drive circuits
2001-02-21 1
Grenzwerte
Maximum Ratings
KOM 2125, KOM 2125 FA
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
= 25 °C
A
Total power dissipation
T
Kennwerte (
Characteristics (
= 25 °C)
A
T
= 25 °C)
A
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
= 5 V, Normlicht/standard light A
R
T = 2856 K, E
V
= 5 V, λ = 870 nm,Ee = 1mW/cm2
R
= 1000 Ix
v
Diode A
Diode B
Diode A
Diode B
Symbol
Symbol
T
; T
op
V
R
P
tot
Symbol
Symbol
I
P
I
P
Wert
Value
stg
– 40 … +80 °C
60 V
150 mW
Wert
Value
KOM 2125 KOM 2125 FA
40 (> 30)
100 (> 75)
–
–
–
–
26 (> 20)
70 (> 50)
Einheit
Unit
Einheit
Unit
µA
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
Bestrahlungsempfindliche Fläche Diode A
Radiant sensitive area Diode B
Abmessung der
bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area
Diode A
Diode B
Abstand Chipoberfläche zu Vergußoberfläche
Distance chip front to case seal
Halbwinkel
Half angle
Dunkelstrom,
V
= 10 V Diode A
R
Dark current Diode B
λ
S max
850 900 nm
λ 400 … 1100 750 ... 1100 nm
A
L × B
L
× W
H
4
10
2 × 2
2 × 5
0.3 0.3 mm
4
10
2 × 2
2 × 5
mm
mm × mm
mm × mm
ϕ±60 ± 60 Grad
deg.
I
R
5 (≤ 30)
10 (≤ 30)
5 (≤ 30)
10 (≤ 30)
nA
2
2001-02-21 2
Kennwerte (TA = 25 °C)
Characteristics (
T
= 25 °C) (cont’d)
A
Bezeichnung
Parameter
Leerlaufspannung
Open-circuit voltage
E
= 1000 Ix, Normlicht/standard light A
v
E
= 1 mW/cm2, λ = 850 nm
e
Kurzschlussstrom
Short-circuit current
Normlicht/standard light A
T = 2856 K, E
λ
= 870 nm, E
= 1000 Ix
v
= 1 mW/cm
e
2
Diode A
Diode B
Diode A
Diode B
Symbol
Symbol
V
O
V
O
I
SC
I
SC
KOM 2125, KOM 2125 FA
Wert
Value
KOM 2125 KOM 2125 FA
350 (> 300)––
350 (> 300)
38
95
–
–
–
–
24
66
Einheit
Unit
mV
mV
µA
µA
Anstiegszeit/Abfallzeit Diode A
Rise and fall time Diode B
R
= 50 Ω; VR = 5 V;
L
= 850 nm; I
λ
Durchlassspannung,
= 800 µA
P
I
= 100 mA; E = 0
F
Forward voltage
Kapazität Diode A
Capacitance Diode B
V
= 0 V; f = 1 MHz; E = 0
R
Temperaturkoeffizient von
Temperature coefficient of V
Temperaturkoeffizient von
Temperature coefficient of I
V
O
O
I
P
P
Normlicht/standard light A
λ
= 850 nm
Rauschäquivalente
Strahlungsleistung Diode A
Noise equivalent power Diode B
V
= 10 V
R
Nachweisgrenze, VR = 10 V Diode A
Detection limit Diode B
t
r, tf
18
25
V
C
F
0
1.0 1.0 V
40
100
TC
TC
V
I
– 2.6 – 2.6 mV/K
0.18
–
NEP 6.4 × 10
9.1 × 10
D* 3.1 × 10
3.5 × 10
– 14
– 14
12
12
18
25
40
100
–
0.2
6.4 × 10
9.1 × 10
3.1 × 10
3.5 × 10
– 14
– 14
12
12
ns
pF
%/K
W
----------- Hz
cm Hz×
-------------------------W
2001-02-21 3
KOM 2125, KOM 2125 FA
Relative Spectral Sensi tivity
KOM 2125,
Dark Current,
S
= f (λ)
rel
I
= f (VR), E = 0
R
normalized to 10 V/25 °C
Relative Spectral Sensitivity
KOM 2125 FA,
100
S
rel
%
80
70
60
50
40
30
20
10
0
400
S
= f (λ)
rel
600 800 1000 nm 1200
OHF01430
λ
Capacitance
C = f (V
), f = 1 MHz, E = 0
R
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage
Dark Current
I
R
E = 0, normalized to T
V
= f (Ev)
O
= f (TA), VR = 10 V,
= 25 °C
A
Directional Character i sti cs
S
= f (ϕ)
rel
100
40 30 20 10
50
60
70
80
90
0
ϕ
1.0
0.8
0.6
0.4
0.2
0
20 40 60 80 100 1200.40.60.81.0
0
2001-02-21 4
OHF01402
Total Powe r Dissipatio n
P
= f (TA)
tot
Maßzeichnung
Package Outlines
Photosensitive area
A = 2 (0.079) x 2 (0.079)
B = 5 (0.197) x 2 (0.079)
5.2 (0.205)
5.0 (0.197)
23
A
B
1
8.5 (0.335)
Cathode
8.2 (0.323)
0.9 (0.035)
0.7 (0.028)
±0.2 (0.008)
1.4 (0.055)
4.5 (0.177)
6.7 (0.264)
6.2 (0.244)
4.3 (0.169)
KOM 2125, KOM 2125 FA
Chip position
0...0.1 (0...0.004)
0.3 (0.012)
Active area
1.2 (0.047)
1.1 (0.043)
GEOY6860
Maße werden wie folgt angegeb en: m m (inch) / Dimensions are specified as follo w s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured char ac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
A critical component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intend ed (a) to be impl anted i n t he human b ody , or (b ) to supp ort a nd/or ma inta in
and sustain human life. If th ey fail , it is rea so nable to assume that the health of the us er m ay be endangered.
2001-02-21 5
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