ON Semiconductor NTB75N03R, NTP75N03R Technical data

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NTB75N03R, NTP75N03R

Power MOSFET 75 Amps, 25 Volts

2

N−Channel D

PAK, TO−220

Features

• Planar HD3e Process for Fast Switching Performance

• Low R

• Low C

to Minimize Conduction Loss

DS(on)

to Minimize Driver Loss

iss

• Low Gate Charge

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V Gate−to−Source Voltage − Continuous V Thermal Resistance − Junction−to−Case

Total Power Dissipation @ TC = 25°C Drain Current

− Continuous @ T

− Single Pulse (t

Thermal Resistance − Junction−to−Ambient

(Note 1) Total Power Dissipation @ T Drain Current − Continuous @ T

Thermal Resistance − Junction−to−Ambient

(Note 2) Total Power Dissipation @ T Drain Current − Continuous @ T

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche Energy − Starting T (V

= 30 Vdc, V

DD

L = 1 mH, R Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in

2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in

p

J

= 10 Vdc, IL = 12 Apk,

GS

= 25 )

G

= 25°C Unless otherwise specified)

J

= 25°C

C

= 10 s)

= 25°C

A

= 25°C

A

= 25°C

A

= 25°C

A

= 25°C

2

).

2

).

Symbol Value Unit

stg

25 V

±20 V

1.68

74.4 75

225

60

2.08

12.6

100

1.25

9.7

−55 to 150

71.7 mJ

260 °C

°C/W

R

P

I

P

E

DSS

GS



JC D

I

D

DM



JA

D

I

D



JA

D

I

D

AS

T

L

W

°C

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75 AMPERES

25 VOLTS

R

DS(on)

dc dc

A A

A

1

2

Gate

3

4

Drain

P75N03R YWW

1

Drain

ORDERING INFORMATION

Device Package Shipping

= 5.6 mΩ (Typ)

4

1

TO−220AB

CASE 221A

STYLE 5

MARKING DIAGRAMS

& PIN ASSIGNMENTS

3 Source

2

75N03 = Device Code Y = Year WW = Work Week

1

Gate

2

3

D2PAK

CASE 418AA

STYLE 2

4

Drain

75N03R YWW

2

Drain

3 Source

4

†

 Semiconductor Components Industries, LLC, 2003

October, 2003 − Rev. 2

NTP75N03R TO−220AB 50 Units/Rail NTB75N03R D2PAK 50 Units/Rail NTB75N03RT4 D2PAK 800/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 Publication Order Number:

NTB75N03R/D

NTB75N03R, NTP75N03R

)

f = 1 MHz)

(

(V

GS

V

d

V

DD

V

d

)

V

DS

V

d

) (Note 3)

g

Forward On−Voltage

V

SD

V

d

(

S dc,GS dc

)( )

(I

S

A

d

V

GS

V

d

ELECTRICAL CHARACTERISTICS (T

Characteristics

= 25°C Unless otherwise specified)

J

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(V

= 0 Vdc, I

GS

Temperature Coefficient (Positive)

= 250 Adc)

D

V

Zero Gate Voltage Drain Current

(V

= 20 Vdc, VGS = 0 Vdc)

DS

= 20 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate−Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

V

(VDS = VGS, ID = 250 Adc)

Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 3)

R (VGS = 4.5 Vdc, ID = 20 Adc) (V

= 10 Vdc, ID = 20 Adc)

GS

Forward Transconductance (Note 3)

(VDS = 10 Vdc, ID = 15 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

(VDS = 20 Vdc, VGS = 0 V,

f = 1 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time t Rise Time Turn−Off Delay Time

V

= 10 V

= 10

ID = 30 Adc, RG = 3)

, V

,

c

= 10 V

= 10

,

c

Fall Time t Gate Charge

(VGS = 5 Vdc, ID = 30 Adc,

= 10

V

= 10 V) (Note 3

c

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Volta

e V

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.73 −

Reverse Recovery Time

(I

= 35 A

= 35

dIS/dt = 100 A/s) (Note 3)

, V

= 0 V

= 0

,

c

,

c

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

4. Switching characteristics are independent of operating junction temperatures.

(br)DSS

I

DSS

I

GSS

GS(th)

DS(on)

g

FS

C

iss

C

oss

C

rss

d(on)

t

r

t

d(off)

f

Q

T

Q

1

Q

2

D

t

rr

t

a

t

b

RR

25

−

28

20.5

−

1.0 10

−

mV/°C

− − ±100

1.0

−

1.5

4.0

8.1

5.6

2.0

13

8.0

−

mV/°C

Mhos

− 27 −

− 1333 −

− 600 −

− 218 −

− 6.9 −

− 1.3 −

− 18.4 −

− 5.5 −

− 13.2 −

− 3.3 −

− 6.2 −

− 0.86

1.2

− 15.6 −

− 13.8 −

− 1.78 −

− 0.004 − C

V

A

nA

V

m

V

dc

pF

ns

nC

c

ns

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2

NTB75N03R, NTP75N03R

140

10 V

120

100

80

5 V

8 V 6 V

4.5 V

4 V

3.5 V 60

40

, DRAIN CURRENT (AMPS)

D

I

20

3 V

VGS = 2.5 V

0

010

V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

42

6

8

140

VDS ≥ 10 V

120

100

80

60

TJ = 25°C

40

, DRAIN CURRENT (AMPS)

D

I

20

TJ = 125°C

0

10

, GATE−TO−SOURCE VOLTAGE (VOLTS)

V

GS

23

TJ = −55°C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.022

0.018

0.014

0.010

0.006

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0.002

DS(on)

R

VGS = 10 V

TJ = 150°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

20 80

0

6040

100

120 140

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

0.022

0.018

0.014

0.010

0.006

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0.002

DS(on)

R

VGS = 4.5 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

0

20 100

6040

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Temperature

45

TJ = 150°C

80

120

6

140

1.8 ID = 30 A

V

1.6

GS

= 10 V

1.4

1.2

1.0

(NORMALIZED)

0.8

, DRAIN−TO−SOURCE RESISTANCE

0.6

DS(on)

−50 50250−25 75 125100

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

100,000

10,000

, LEAKAGE (nA)

1000

DSS

I

100

150

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3

VGS = 0 V

TJ = 150°C

TJ = 125°C

01510 255

20

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus V oltage

ON Semiconductor NTB75N03R, NTP75N03R Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual