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NTP75N03L09,
NTB75N03L09
Power MOSFET
75 Amps, 30 Volts, N−Channel
TO−220 and D
This Logic Level Vertical Power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Pb−Free Packages are Available
• Ultra−Low R
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• I
and V
DSS
• High Avalanche Energy Specified
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
T ypical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP75N03HDL and MTB75N03HDL in Many
Applications
DS(on)
2
PAK
, Single Base, Advanced Technology
DS(on)
Specified at Elevated Temperatures
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75 AMPERES, 30 VOLTS
= 8 m
N−Channel
D
S
TO−220
CASE 221A
STYLE 5
MARKING
DIAGRAMS
4
Drain
75N
03L09
AYWW
G
4
R
DS(on)
Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 6
1
2
3
4
2
D
PAK
2
1
3
75N03L09 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 Publication Order Number:
CASE 418AA
STYLE 2
1
Gate
75N03L09
1
Gate
NTP75N03L09/D
2
Drain
4
Drain
AYWW
2
Drain
3
Source
3
Source
NTP75N03L09, NTB75N03L09
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Drain−to−Gate Voltage
= 25°C unless otherwise noted)
J
Rating
Symbol Value Unit
30 Vdc
30 Vdc
V
DSS
DGB
(RGS = 10 M)
Gate−to−Source Voltage − Continuous V
Non−repetitive (tp ≤ 10 ms) V
GS
GS
±20 Vdc
±24 Vdc
Drain Current
I
I
I
DM
P
D
D
D
− Continuous @ T
− Continuous @ T
= 25°C
C
= 100°C
C
− Single Pulse (tp ≤ 10 s)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ T
= 25°C (Note 1)
A
Operating and Storage Temperature Range TJ and T
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
= 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc)
(V
DD
E
AS
stg
75
Adc
59
225
125
1.0
2.5
Apk
W
W/°C
W
−55 to 150 °C
1500 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
R
R
R
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
JC
JA
JA
L
1.0
°C/W
62.5
50
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device Package Shipping
NTP75N03L09 TO−220 50 Units/Rail
NTP75N03L09G TO−220
50 Units/Rail
(Pb−Free)
NTB75N03L09 D2PAK 50 Units/Rail
NTB75N03L09G D2PAK
50 Units/Rail
(Pb−Free)
NTB75N03L09T4 D2PAK 800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
NTP75N03L09, NTB75N03L09
f 1.0 MHz)
V
DD
Vdc, I
D
Adc,
V
DS
Vdc) (Note 2)
dlS/dt 100 A/s) (Note 2)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (Note 2)
(V
= 0 Vdc, ID = 250 Adc)
GS
V
(BR)DSS
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
(V
= 30 Vdc, VGS = 0 Vdc)
DS
(V
= 30 Vdc, VGS = 0 Vdc, TJ = 150°C)
DS
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
= VGS, ID = 250 Adc)
DS
V
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)
(V
= 5.0 Vdc, ID = 37.5 Adc)
GS
Static Drain−to−Source On Resistance (Note 2)
(V
= 10 Vdc, ID = 75 Adc)
GS
= 10 Vdc, ID = 37.5 Adc, TJ = 125°C)
(V
GS
R
V
Forward Transconductance (Notes 2 & 4) (VDS = 3 Vdc, ID = 20 Adc) g
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = 5.0 Vdc,
V
= 20 Vdc, ID = 75 Adc,
20
DD
RG = 4.7 ) (Note 2)
75
Fall Time t
Gate Charge (VGS = 5.0 Vdc,
ID = 75 Adc,
V
= 24 Vdc) (Note 2)
24
DS
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc)
(I
= 75 Adc, VGS = 0 Vdc, TJ = 125°C)
S
(Note 2)
I
DSS
GSS
GS(th)
DS(on)
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
f
Q
T
Q
1
Q
2
V
SD
30 34
−57
−
−
Vdc
mV°C
Adc
−
−
−
−
1.0
10
− − ±100 nAdc
1.0
−
1.6
−6
2.0
−
Vdc
mV°C
m
− 6.5 8.0
Vdc
−
−
0.52
0.35
0.68
0.50
− 58 − m
− 4398 5635
− 1160 1894
− 317 430
− 16 30
− 130 200
− 65 110
− 105 175
− 57 75
nC
− 11 15
− 34 50
−
−
1.19
1.09
1.25
−
Vdc
pF
ns
Reverse Recovery Time
(Note 4) (IS = 75 Adc, VGS = 0 Vdc
dl
/dt = 100 A/s) (Note 2)
S
Reverse Recovery Stored
Charge (Note 4)
2. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.
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t
rr
t
a
t
b
Q
RR
− 37 −
− 20 −
− 17 −
− 0.023 −
ns
C
3
NTP75N03L09, NTB75N03L09
120
90
60
30
, DRAIN CURRENT (AMPS)
D
I
TJ = 25°C
0
0
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
0.40.2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.0085
0.008
0.0075
0.007
0.0065
0.006
0.0055
0.005
, DRAIN−TO SOURCE RESISTANCE ()
0.0045
0.004
DS(on)
R
VGS = 5 V
20 60 70 120
10
ID, DRAIN CURRENT (AMPS)
VGS = 4 V
VGS = 4.5 V
VGS = 5 V
VGS = 6 V
VGS = 8 V
VGS = 10 V
TJ = 100°C
TJ = 25°C
TJ = −55°C
504030
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
80 90 100
150
VDS ≥ 10 V
135
120
105
90
75
60
45
30
, DRAIN CURRENT (AMPS)
D
I
15
0
2.6
0.5 2.5 321.5 3.514
0.009
TJ = 25°C
0.008
0.007
0.006
0.005
, DRAIN−TO SOURCE RESISTANCE ()
0.004
DS(on)
0806040 10020 120
R
TJ = 25°C
TJ = 100°C
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
TJ = −55°C
VGS = 5 V
VGS = 10 V
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
1.4
1.2
1
0.8
0.6
−50 50250−25 75 125 150
, DRAIN−TO SOURCE RESISTANCE (NORMALIZED)
DS(on)
Figure 5. On−Resistance Variation Temperature
R
V
= 5.0 V
GS
I
= 37.5 A
D
TJ, JUNCTION TEMPERATURE (°C)
100
1000
100
10
, LEAKAGE (nA)
DSS
I
1
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4
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 0 V
TJ = 125°C
TJ = 100°C
515202510 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current vs.
Voltage
NTP75N03L09, NTB75N03L09
12000
10000
8000
6000
4000
C, CAPACITANCE (pF)
2000
0
10
1000
100
t, TIME (ns)
10
1
V
V
GS
DS
C
iss
C
oss
C
rss
4 2 0 2 4 6 8 10121416182022
68
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VDS = 0 V
V
= 0 V
GS
T
= 25°C
J
25
8
V
6
Q
4
1
DS
Q
T
Q
2
2
, GATE−TO−SOURCE VOLTAGE (V)
GS
0
V
0102030405060
Q
3
Qg, TOTAL GATE CHARGE (nC)
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
t
r
t
f
t
d(off)
t
d(on)
9.16.24.7
VDD = 15 V
V
GS
TJ = 25°C
I
= 75 A
D
2.2 10 20
RG, GATE RESISTANCE ()
= 5 V
75
70
65
60
55
50
45
40
35
30
25
20
, SOURCE CURRENT (AMPS)
15
S
I
10
VGS = 0 V
T
= 25°C
J
5
0
0.0 0.80.60.40.2 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
V
GS
ID = 75 A
T
= 25°C
J
30
20
10
0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1600
1400
1200
1000
800
600
400
AVALANCHE ENERGY (mJ)
200
, SINGLE PULSE DRAIN−TO−SOURCE
AS
0
E
25 7550 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
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Figure 10. Diode Forward Voltage vs. Current
ID = 75 A
5
NTP75N03L09, NTB75N03L09
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
SEATING
−T−
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
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6
NTP75N03L09, NTB75N03L09
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
−T−
SEATING
PLANE
−B−
G
C
E
V
4
W
A
231
S
K
W
J
D
3 PL
M
0.13 (0.005) T
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.036 0.51 0.92
E 0.045 0.055 1.14 1.40
F 0.310 −−− 7.87 −−−
G 0.100 BSC 2.54 BSC
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
M 0.280 −−− 7.11 −−−
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
1.016
0.04
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
inches
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTP75N03L09, NTB75N03L09
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTP75N03L09/D
8
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