ON Semiconductor NTP75N03L09, NTB75N03L09 Technical data

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NTP75N03L09,
NTB75N03L09

Power MOSFET

75 Amps, 30 Volts, N−Channel
TO−220 and D

This Logic Level Vertical Power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.

Features

• Pb−Free Packages are Available

• Ultra−Low R

• SPICE Parameters Available

• Diode is Characterized for Use in Bridge Circuits

• I

and V

DSS

• High Avalanche Energy Specified

• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0

T ypical Applications

• Power Supplies

• Inductive Loads

• PWM Motor Controls

• Replaces MTP75N03HDL and MTB75N03HDL in Many

Applications

DS(on)

2

PAK

, Single Base, Advanced Technology

DS(on)

Specified at Elevated Temperatures

http://onsemi.com

75 AMPERES, 30 VOLTS

= 8 m

N−Channel

D

S

TO−220

CASE 221A

STYLE 5

MARKING

DIAGRAMS

4

Drain

75N

03L09

AYWW

G

4

R

DS(on)

 Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 6

1

2

3

4

2

D

PAK

2

1

3

75N03L09 = Device Code
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

1 Publication Order Number:

CASE 418AA

STYLE 2

1

Gate

75N03L09

1

Gate

NTP75N03L09/D

2

Drain

4

Drain

AYWW

2

Drain

3
Source

3
Source

NTP75N03L09, NTB75N03L09

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Gate Voltage

= 25°C unless otherwise noted)

J

Rating

Symbol Value Unit

30 Vdc
30 Vdc

V

DSS
DGB

(RGS = 10 M)
Gate−to−Source Voltage − Continuous V
Non−repetitive (tp ≤ 10 ms) V

GS
GS

±20 Vdc
±24 Vdc

Drain Current

I

I
I

DM

P

D
D

D

− Continuous @ T

− Continuous @ T

= 25°C

C

= 100°C

C

− Single Pulse (tp ≤ 10 s)

Total Power Dissipation @ TC = 25°C

Derate above 25°C
Total Power Dissipation @ T

= 25°C (Note 1)

A

Operating and Storage Temperature Range TJ and T
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

= 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc)

(V

DD

E

AS

stg

75

Adc

59

225
125

1.0

2.5

Apk

W

W/°C

W

−55 to 150 °C
1500 mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

R
R
R

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T



JC



JA



JA

L

1.0

°C/W

62.5
50

260 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended pad size.

ORDERING INFORMATION

Device Package Shipping

NTP75N03L09 TO−220 50 Units/Rail
NTP75N03L09G TO−220

50 Units/Rail

(Pb−Free)
NTB75N03L09 D2PAK 50 Units/Rail
NTB75N03L09G D2PAK

50 Units/Rail

(Pb−Free)
NTB75N03L09T4 D2PAK 800 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

http://onsemi.com

2

NTP75N03L09, NTB75N03L09

f 1.0 MHz)

V

DD

Vdc, I

D

Adc,

V

DS

Vdc) (Note 2)

dlS/dt 100 A/s) (Note 2)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage (Note 2)

(V

= 0 Vdc, ID = 250 Adc)

GS

V

(BR)DSS

Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current

(V

= 30 Vdc, VGS = 0 Vdc)

DS

(V

= 30 Vdc, VGS = 0 Vdc, TJ = 150°C)

DS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (Note 2)

(V

= VGS, ID = 250 Adc)

DS

V

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)

(V

= 5.0 Vdc, ID = 37.5 Adc)

GS

Static Drain−to−Source On Resistance (Note 2)

(V

= 10 Vdc, ID = 75 Adc)

GS

= 10 Vdc, ID = 37.5 Adc, TJ = 125°C)

(V

GS

R

V

Forward Transconductance (Notes 2 & 4) (VDS = 3 Vdc, ID = 20 Adc) g

DYNAMIC CHARACTERISTICS (Note 4)

Input Capacitance
Output Capacitance

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

Transfer Capacitance

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

(VGS = 5.0 Vdc,

V

= 20 Vdc, ID = 75 Adc,

20

DD

RG = 4.7 ) (Note 2)

75

Fall Time t
Gate Charge (VGS = 5.0 Vdc,

ID = 75 Adc,

V

= 24 Vdc) (Note 2)

24

DS

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc)

(I

= 75 Adc, VGS = 0 Vdc, TJ = 125°C)

S

(Note 2)

I

DSS

GSS

GS(th)

DS(on)

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

f

Q

T

Q

1

Q

2

V

SD

30 34

−57

−

−

Vdc

mV°C

Adc

−

−

−

−

1.0
10

− − ±100 nAdc

1.0

−

1.6

−6

2.0

−

Vdc

mV°C

m

− 6.5 8.0
Vdc

−

−

0.52

0.35

0.68

0.50

− 58 − m

− 4398 5635

− 1160 1894

− 317 430

− 16 30

− 130 200

− 65 110

− 105 175

− 57 75

nC

− 11 15

− 34 50

−

−

1.19

1.09

1.25

−

Vdc

pF

ns

Reverse Recovery Time
(Note 4) (IS = 75 Adc, VGS = 0 Vdc

dl

/dt = 100 A/s) (Note 2)

S

Reverse Recovery Stored
Charge (Note 4)

2. Pulse Test: Pulse Width  300 S, Duty Cycle  2%.

3. Switching characteristics are independent of operating junction temperatures.

4. From characterization test data.

http://onsemi.com

t

rr

t

a

t

b

Q

RR

− 37 −

− 20 −

− 17 −

− 0.023 −

ns

C

3