ON Semiconductor NTP60N06L, NTB60N06L Technical data
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NTP60N06L, NTB60N06L
Power MOSFET
60 Amps, 60 Volts,
Logic Level
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
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60 AMPERES, 60 VOLTS
R
DS(on)
G
= 16 mW
N−Channel
D
S
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 5.0 Vdc,
L = 0.3 mH, IL(pk) = 55 A,VDS = 60 Vdc)
Thermal Resistance,
− Junction−to−Case
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
= 25°C unless otherwise noted)
C
Rating Symbol Value Unit
stg
60 Vdc
60 Vdc
"15
"20
60
42.3
180
150
1.0
2.4
− 55 to
175
454 mJ
1.0
62.5
260 °C
Vdc
Adc
Apk
W
W/°C
W
°C
°C/W
V
V
V
E
R
R
DSS
DGR
GS
GS
I
I
I
DM
P
AS
q
q
T
D
D
D
JC
JA
L
4
4
1
2
TO−220AB
1
2
CASE 221A
STYLE 5
3
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
NTx60N06LG
AYWW
1
Gate
Drain
NTx60N06L = Device Code
x = B or P
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
3
Source
2
Gate
Drain
NTx
60N06LG
AYWW
1
Drain
4
3
2
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1 Publication Order Number:
NTP60N06L/D
NTP60N06L, NTB60N06L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(V
= 0 Vdc, ID = 250 mAdc)
GS
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ =150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 5.0 Vdc, ID = 30 Adc)
Static Drain−to−Source On−Voltage (Note 2)
(VGS = 5.0 Vdc, ID = 60 Adc)
(VGS = 5.0 Vdc, ID = 30 Adc, TJ = 150°C)
Forward Transconductance (Note 2) (VDS = 8.0 Vdc, ID = 12 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance C
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(V
= 48 Vdc, ID = 60 Adc,
Rise Time t
Turn−Off Delay Time t
DD
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 2)
Fall Time t
Gate Charge
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc) (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = 60 Adc, VGS = 0 Vdc) (Note 2)
(IS = 60 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 60 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge Q
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
V
DS(on)
C
C
t
d(on)
d(off)
Q
Q
Q
V
FS
iss
oss
rss
SD
t
rr
t
a
t
b
RR
60
−
72.8
75.2
−
−
mV/°C
mAdc
Vdc
−
−
−
−
1.0
10
− − ± 100 nAdc
Vdc
1.0
−
1.58
5.4
2.0
−
mV/°C
mW
− 12.4 16
Vdc
−
−
0.793
0.861
1.17
−
− 48 − mhos
− 2195 3075 pF
− 675 945
− 188 380
− 50.4 100 ns
r
− 576 1160
− 100 200
f
T
1
2
− 237 480
− 43.2 65 nC
− 6.4 −
− 29 −
−
−
− 81.9 −
0.98
0.86
1.05
−
Vdc
ns
− 42.1 −
− 39.8 −
− 0.172 −
mC
ORDERING INFORMATION
Device Package Shipping
NTP60N06L TO−220AB 50 Units / Rail
NTP60N06LG TO−220AB
50 Units / Rail
(Pb−Free)
NTB60N06L
NTB60N06LG
D2PAK
D2PAK
50 Units / Rail
50 Units / Rail
(Pb−Free)
NTB60N06LT4
NTB60N06LT4G
D2PAK
D2PAK
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
NTP60N06L, NTB60N06L
0
120
120
I
, DRAIN CURRENT (AMPS)
R
, DRAIN−TO−SOURCE RESISTANCE (
)
R
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
0
100
6 V
5 V
80
60
40
20
D
W
0.03
0.026
0.022
0.018
0.014
0.01
0.006
DS(on)
0
8 V
VGS = 10 V
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
VGS = 5 V
TJ = 100°C
TJ = 25°C
TJ = −55°C
40200
ID, DRAIN CURRENT (AMPS)
80 100
4.5 V
4 V
3.5 V
3 V
VDS ≥ 10 V
100
80
60
40
, DRAIN CURRENT (AMPS)
20
D
I
53210
0.03
0.026
0.022
0.018
0.014
0.01
, DRAIN−TO−SOURCE RESISTANCE (W)
0.006
12060
DS(on)
R
0
0
TJ = 100°C
VDS = 5 V
VGS = 10 V
TJ = 25°C
TJ = −55°C
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
TJ = 100°C
TJ = 25°C
TJ = −55°C
40200
ID, DRAIN CURRENT (AMPS)
60
80 100
64321
12
Figure 3. On−Resistance versus Gate−to−Source
Voltage
2
ID = 30 A
VGS = 5 V
1.8
1.6
1.4
1.2
1
0.8
0.6
TJ, JUNCTION TEMPERATURE (°C)
DS(on),
Figure 5. On−Resistance Variation with
Temperature
10,000
1000
, LEAKAGE (nA)
100
DSS
I
150
1751251007550250−25−50
10
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3
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 100°C
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20 6
30 40 50
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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