ON Semiconductor NTP45N06, NTB45N06 Technical data

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NTP45N06, NTB45N06

Power MOSFET
45 Amps, 60 Volts

N–Channel TO–220 and D2PAK

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

Features

• Higher Current Rating

• Lower R

• Lower V

• Lower Capacitances

• Lower Total Gate Charge

• Tighter V

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

T ypical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 10 MΩ) V
Gate–to–Source Voltage

Drain Current

Total Power Dissipation @ TA = 25°C

Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)

Operating and Storage Temperature Range TJ, T

Single Pulse Drain–to–Source Avalanche

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in2).

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in2).

DS(on)
DS(on)

Specification

SD

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

– Continuous
– Non–Repetitive (tp10 ms)

– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp10 µs)

Derate above 25°C

Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 Ω,
I

= 40 A, L = 0.3 mH, VDS = 60 Vdc)

L(pk)

DSS

DGR

V

GS

V

GS

I

D

I

D

I

DM
P

E

AS

D

stg

60 Vdc
60 Vdc

20
30

45
30

150
125

0.83

3.2

2.4

–55 to

+175

240 mJ

Vdc

Adc

Apk

W

W/°C

W
W

°C

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45 AMPERES

60 VOLTS

R

DS(on)

G

4

TO–220AB

CASE 221A

1

2

3

STYLE 5

MARKING DIAGRAMS

& PIN ASSIGNMENTS

4

Drain

NTP45N06
LLYWW

1

Gate

3
Source

2

Drain

ORDERING INFORMATION

Device Package Shipping

= 26 mΩ

N–Channel

D

S

1

2

3

D2PAK

CASE 418B

STYLE 2

4

Drain

NTB45N06
LLYWW

1

Gate

NTx45N06 = Device Code
LL = Location Code
Y = Year
WW = Work Week

2

Drain

4

3
Source

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev . 0

NTP45N06 TO–220AB 50 Units/Rail
NTB45N06 D2PAK 50 Units/Rail
NTB45N06T4 D2PAK 800/Tape & Reel

1 Publication Order Number:

NTP45N06/D

NTP45N06, NTB45N06

)

f = 1.0 MHz)

(V

DD

Vdc, I

D

Adc

)

V

GS

Vdc) (Note 5.)

)

dIS/dt = 100 A/µs) (Note 5.)

MAXIMUM RATINGS (T

Thermal Resistance – Junction–to–Case

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 5.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 5.)

Gate Threshold Voltage (Note 5.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 5.)

(VGS = 10 Vdc, ID = 22.5 Adc)

Static Drain–to–Source On–Voltage (Note 5.)

(VGS = 10 Vdc, ID = 45 Adc)
(VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C)

Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 6.)

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

Reverse Recovery Stored Charge Q

3. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2).

4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).

5. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

= 25°C unless otherwise noted)

J

Rating

– Junction–to–Ambient (Note 3.)
– Junction–to–Ambient (Note 4.)

= 25°C unless otherwise noted)

J

Characteristic

(VDS = 25 Vdc, VGS = 0 Vdc,

VGS = 10 Vdc, RG = 9.1 Ω) (Note 5.)

(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)

(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)

f = 1.0 MHz

(VDD = 30 Vdc, ID = 45 Adc,

30

(VDS = 48 Vdc, ID = 45 Adc,

= 10 Vdc) (Note 5.

= 10

V

(IS = 45 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/µs) (Note 5.

45

Symbol Value Unit

R

θJC

R

θJA

R

θJA

L

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

t

d(off)

Q
Q
Q

V

SD

t
t
t

RR

r

f
T
1
2

rr

a
b

,

60

–

–
–

– – ±100 nAdc

2.0
–

– 21 26

–
–

– 16.6 – mhos

– 1224 1725 pF
– 345 485
– 76 160

– 10 25 ns
– 101 200
– 33 70
– 106 220
– 33 46 nC
– 6.4 –
– 15 –

–
–

– 53.1 –
– 36 –
– 16.9 –
– 0.087 – µC

1.2

46.8

63.2
260 °C

70
57

–
–

2.8

7.2

0.93

0.93

1.08

0.93

1.0
10

4.0

1.4

1.2

°C/W

–
–

–

–

–

Vdc

mV/°C

µAdc

Vdc

mV/°C

mOhm

Vdc

Vdc

ns

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2

NTP45N06, NTB45N06

90
80

70
60
50
40
30

, DRAIN CURRENT (AMPS)

20

D

I

10

0

0

VGS = 10 V

VGS = 9 V

21

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.05
VGS = 10 V

0.042

0.034

VGS = 8 V

VGS = 7.5 V

3

TJ = 100°C

VGS = 7 V

VGS = 6.5 V

VGS = 6 V

VGS = 5.5 V

VGS = 5 V
VGS = 4.5 V

4 5 5.5 6 6.5 7 7.5

6

90

VDS > = 10 V

80
70
60
50
40
30

, DRAIN CURRENT (AMPS)

20

D

I

10

0.032

0.03

0.028

0.026

TJ = 25°C

TJ = 100°C

0

35 84.543.5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = –55°C

0.026

0.018

, DRAIN–TO–SOURCE RESISTANCE (Ω)

0.01

DS(on)

R

0

10 50 60 90

ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = –55°C

403020

Figure 3. On–Resistance vs. Gate–to–Source

Voltage

2.2
ID = 22.5 A

2

VGS = 10 V

1.8

1.6

1.4

1.2

(NORMALIZED)

1

, DRAIN–TO–SOURCE RESISTANCE

0.8

0.6

DS(on)

–50 50250–25 75 125100

R

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

0.024

0.022

0.02

, DRAIN–TO–SOURCE RESISTANCE (Ω)

70 0 40302010 50 60 9070

80 80

0.018

DS(on)

R

VGS = 10 V

VGS = 15 V

Figure 4. On–Resistance vs. Drain Current and

Gate Voltage

10000

, LEAKAGE (nA)
I

175150

VGS = 0 V

TJ = 150°C

1000

TJ = 125°C

DSS

100

TJ = 100°C

10

030402010 50 60

Figure 5. On–Resistance Variation with

Temperature

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Figure 6. Drain–to–Source Leakage Current

vs. Voltage

3

NTP45N06, NTB45N06

3600
3200
2800

2400
2000
1600
1200

C, CAPACITANCE (pF)

VDS = 0 V

C

iss

C

rss

800
400

0

10

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE

V

5

VGS = 0 V

GSVDS

(VOLTS)

C

iss

C

oss

C

rss

10

155020

Figure 7. Capacitance Variation Figure 8. Gate–to–Source and

1000

VDS = 30 V
ID = 45 A
VGS = 10 V

t

100

f

t

r

t

d(off)

TJ = 25°C

12

10

8

Q

6

4

2

, GATE–TO–SOURCE VOLTAGE (VOLTS)

0

GS

V

25 0 16 20128244

Drain–to–Source Voltage vs. Total Charge

50

VGS = 0 V
TJ = 25°C

40

30

Q

T

V

GS

Q

1

Qg, TOTAL GATE CHARGE (nC)

2

ID = 45
TJ = 25°C

28 32 36

t, TIME (ns)

10

1

1 10 100 0.6 0.76 0.80.720.68 0.920.64 1.04

t

d(on)

RG, GATE RESISTANCE (Ω)V

Figure 9. Resistive Switching Time Variation

20

10

, SOURCE CURRENT (AMPS)

S

I

0

, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

SD

0.84 0.88 0.96

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

1000

VGS = 20 V
SINGLE PULSE
TC = 25°C

100

dc

DS(on)

10 ms

Limit

1 ms

100 µs

10

1

, DRAIN CURRENT (AMPS)

D

I

0.1

0.10 10 1001 25 125 15010075 17550

R
Thermal Limit

Package Limit

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

280

240

200

160

120

AVALANCHE ENERGY (mJ)

, SINGLE PULSE DRAIN–TO–SOURCE

AS

E

ID = 45 A

80

40

0

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

1

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4

NTP45N06, NTB45N06

1

Normalized to R

0.1

EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)

r(t),

at Steady State

θJC

0.01

0.00001 10.10.010.0010.0001 10
t, TIME (s)

Figure 13. Thermal Response

10

Normalized to R
1″ square Cu Pad, Cu Area 1.127 in2,
3 x 3 inch FR4 board

1

0.1

0.01

at Steady State,

θJA

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.001

0.00001 0.001 0.01

10001001010.10.0001

t, TIME (s)

Figure 14. Thermal Response

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NTP45N06, NTB45N06

PACKAGE DIMENSIONS

TO–220 THREE–LEAD

TO–220AB

CASE 221A–09

ISSUE AA

SEATING

–T–

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 5:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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6

–T–

SEATING
PLANE

–B–

G

NTP45N06, NTB45N06

PACKAGE DIMENSIONS

D2PAK

CASE 418B–03

ISSUE D

C

E

V

4

A

231

S

K

J

3 PL

D

0.13 (0.005) T

M

M

B

H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.035 0.51 0.89
E 0.045 0.055 1.14 1.40
G 0.100 BSC 2.54 BSC
H 0.080 0.110 2.03 2.79
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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7

NTP45N06, NTB45N06

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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NTP45N06/D