ON Semiconductor NTP45N06, NTB45N06 Technical data

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NTP45N06, NTB45N06

Power MOSFET 45 Amps, 60 Volts

N–Channel TO–220 and D2PAK

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Features

• Higher Current Rating

• Lower R

• Lower V

• Lower Capacitances

• Lower Total Gate Charge

• Tighter V

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

T ypical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain–to–Source Voltage V Drain–to–Gate Voltage (RGS = 10 MΩ) V Gate–to–Source Voltage

Drain Current

Total Power Dissipation @ TA = 25°C

Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.)

Operating and Storage Temperature Range TJ, T

Single Pulse Drain–to–Source Avalanche

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in2).

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in2).

DS(on) DS(on)

Specification

= 25°C unless otherwise noted)

Rating Symbol Value Unit

– Continuous – Non–Repetitive (tp10 ms)

– Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp10 µs)

Derate above 25°C

Energy – Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 Ω, I

= 40 A, L = 0.3 mH, VDS = 60 Vdc)

L(pk)

DSS

DGR

DM P

stg

60 Vdc 60 Vdc

20 30

45 30

150 125

0.83

3.2

2.4

–55 to

+175

240 mJ

Vdc

Adc

Apk

W/°C

W W

°C

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45 AMPERES

60 VOLTS

DS(on)

TO–220AB

CASE 221A

STYLE 5

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

NTP45N06 LLYWW

Gate

3 Source

Drain

ORDERING INFORMATION

Device Package Shipping

= 26 mΩ

N–Channel

D2PAK

CASE 418B

STYLE 2

Drain

NTB45N06 LLYWW

Gate

NTx45N06 = Device Code LL = Location Code Y = Year WW = Work Week

Drain

3 Source

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev . 0

NTP45N06 TO–220AB 50 Units/Rail NTB45N06 D2PAK 50 Units/Rail NTB45N06T4 D2PAK 800/Tape & Reel

1 Publication Order Number:

NTP45N06/D

NTP45N06, NTB45N06

)

f = 1.0 MHz)

Vdc, I

Adc

)

Vdc) (Note 5.)

)

dIS/dt = 100 A/µs) (Note 5.)

MAXIMUM RATINGS (T

Thermal Resistance – Junction–to–Case

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 5.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive) Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 5.)

Gate Threshold Voltage (Note 5.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (Note 5.)

(VGS = 10 Vdc, ID = 22.5 Adc)

Static Drain–to–Source On–Voltage (Note 5.)

(VGS = 10 Vdc, ID = 45 Adc) (VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C)

Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 6.)

Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time t Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

Reverse Recovery Stored Charge Q

3. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2).

4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).

5. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

= 25°C unless otherwise noted)

Rating

– Junction–to–Ambient (Note 3.) – Junction–to–Ambient (Note 4.)

= 25°C unless otherwise noted)

Characteristic

(VDS = 25 Vdc, VGS = 0 Vdc,

VGS = 10 Vdc, RG = 9.1 Ω) (Note 5.)

(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)

(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)

f = 1.0 MHz

(VDD = 30 Vdc, ID = 45 Adc,

(VDS = 48 Vdc, ID = 45 Adc,

= 10 Vdc) (Note 5.

= 10

(IS = 45 Adc, VGS = 0 Vdc,

/dt = 100 A/µs) (Note 5.

Symbol Value Unit

θJC

θJA

Symbol Min Typ Max Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

iss

oss

rss

d(on)

d(off)

Q Q Q

t t t

f T 1 2

a b

–

– –

– – ±100 nAdc

2.0 –

– 21 26

– –

– 16.6 – mhos

– 1224 1725 pF – 345 485 – 76 160

– 10 25 ns – 101 200 – 33 70 – 106 220 – 33 46 nC – 6.4 – – 15 –

– –

– 53.1 – – 36 – – 16.9 – – 0.087 – µC

1.2

46.8

63.2 260 °C

70 57

– –

2.8

7.2

0.93

1.08

0.93

1.0 10

4.0

1.4

1.2

°C/W

– –

–

Vdc

mV/°C

µAdc

Vdc

mV/°C

mOhm

Vdc

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NTP45N06, NTB45N06

90 80

70 60 50 40 30

, DRAIN CURRENT (AMPS)

VGS = 10 V

VGS = 9 V

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.05 VGS = 10 V

0.042

0.034

VGS = 8 V

VGS = 7.5 V

TJ = 100°C

VGS = 7 V

VGS = 6.5 V

VGS = 6 V

VGS = 5.5 V

VGS = 5 V VGS = 4.5 V

4 5 5.5 6 6.5 7 7.5

VDS > = 10 V

80 70 60 50 40 30

, DRAIN CURRENT (AMPS)

0.032

0.03

0.028

0.026

TJ = 25°C

TJ = 100°C

35 84.543.5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = –55°C

0.026

0.018

, DRAIN–TO–SOURCE RESISTANCE (Ω)

0.01

DS(on)

10 50 60 90

ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = –55°C

403020

Figure 3. On–Resistance vs. Gate–to–Source

Voltage

2.2 ID = 22.5 A

VGS = 10 V

1.8

1.6

1.4

1.2

(NORMALIZED)

, DRAIN–TO–SOURCE RESISTANCE

0.8

0.6

DS(on)

–50 50250–25 75 125100

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

0.024

0.022

0.02

, DRAIN–TO–SOURCE RESISTANCE (Ω)

70 0 40302010 50 60 9070

80 80

0.018

DS(on)

VGS = 10 V

VGS = 15 V

Figure 4. On–Resistance vs. Drain Current and

Gate Voltage

10000

, LEAKAGE (nA) I

175150

VGS = 0 V

TJ = 150°C

1000

TJ = 125°C

DSS

100

TJ = 100°C

030402010 50 60

Figure 5. On–Resistance Variation with

Temperature

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Figure 6. Drain–to–Source Leakage Current

vs. Voltage

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