ON Semiconductor NTP4302, NTB4302 Technical data

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NTP4302, NTB4302

Power MOSFET 74 Amps, 30 Volts

N−Channel TO−220 and D2PAK

Features

• Low R

• Higher Efficiency Extending Battery Life

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• I

T ypical Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery Powered Products: Ie:

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Drain−to−Gate Voltage (RGS = 10 MΩ) V Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ TC = 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

1. When surface mounted to an FR4 Board using minimum recommended Pad

2. Current limited by internal lead wires.

DS(on)

Specified at Elevated Temperature

DSS

Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards

= 25°C unless otherwise noted)

J

Rating

− Continuous

− Continuous @ T

− Single Pulse (t

Derate above 25°C

Energy − Starting T (V

= 30 Vdc, VGS = 10 Vdc, L = 5.0 mH

DD

I

= 17 A, VDS = 30 Vdc, RG = 25 Ω)

L(pk)

− Junction−to−Case

− Junction−to−Ambient (Note 1)

Purposes, 1/8″ from case for 10 seconds

Size, (Cu Area 0.412 in

= 25°C

C

= 100°C

C

10 µs)

p

= 25°C

J

2

).

Symbol Value Unit

stg

30 Vdc 30 Vdc

20

74 47

175

80

0.66WW/°C

−55 to +150

722 mJ

1.55 70

260 °C

V

E

R R

DSS DGR

GS

I I

I

DM

P

AS

θ θ

T

D D

D

JC JA

L

Vdc

Adc

Apk

°C

°C/W

1

2

Gate

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74 AMPERES

30 VOLTS

R

3

Drain

NTx4302 LLYWW

1

Drain

DS(on)

4

2

= 9.3 mΩ Max

N−Channel

G

TO−220AB

CASE 221A

STYLE 5

MARKING DIAGRAMS

& PIN ASSIGNMENTS

3 Source

D

S

1

2

3

D2PAK

CASE 418AA

STYLE 2

4

Drain

NTx4302 LLYWW

1

Gate

x = P or B NTx4302 = Device Code LL = Location Code Y = Year WW = Work Week

Drain

3

2

Source

4

 Semiconductor Components Industries, LLC, 2003

October, 2003 − Rev. 1

ORDERING INFORMATION

Device Package Shipping

NTP4302 TO−220AB 50 Units/Rail NTB4302 D2PAK 50 Units/Rail NTB4302T4 D2PAK 800/Tape & Reel

1 Publication Order Number:

NTP4302/D

NTP4302, NTB4302

)

f = 1.0 MHz)

(V

DD

24 Vdc, I

D

Adc

(V

DD

24 Vdc, I

D

Adc

)

V

GS

Vdc) (Note 3)

)

dIS/dt = 100 A/µs) (Note 3)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

= 0 Vdc, ID = 250 µAdc)

(V

GS

Temperature Coefficient (Positive) Zero Gate Voltage Drain Current

(V

= 30 Vdc, VGS = 0 Vdc)

DS

= 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

(V

DS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(V

= VGS, ID = 250 µAdc)

DS

Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 3)

= 10 Vdc, ID = 37 Adc)

(V

GS

(V

= 10 Vdc, ID = 20 Adc)

GS

= 4.5 Vdc, ID = 10 Adc)

(V

GS

Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time Rise Time Turn−Off Delay Time

V

(V

= 24 Vdc, ID = 20 Adc,

DD

= 10 Vdc, RG = 2.5 Ω) (Note 3)

GS

20

,

Fall Time t Turn−On Delay Time t Rise Time Turn−Off Delay Time

V

(V

= 24 Vdc, ID = 10 Adc,

DD

= 4.5 Vdc, RG = 2.5 Ω) (Note 3)

GS

10

,

Fall Time t Gate Charge

(VDS = 24 Vdc, ID = 37 Adc,

V

= 4.5 Vdc) (Note 3

= 4.5

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

(I

= 20 Adc, VGS = 0 Vdc, TJ = 125°C)

S

Reverse Recovery Time

(IS = 20 Adc, VGS = 0 Vdc, dI

/dt = 100 A/µs) (Note 3

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

C C C

t

d(on)

t

d(off)

d(on)

t

d(off)

Q Q Q

V

t t t

FS

iss oss rss

t

gs

gd

SD

rr

a

b RR

30

−

25

−

1.0 10

− − ±100 nAdc

1.0

−

− 6.8

1.9

−3.8

6.8

9.5

3.0

−

9.3

12.5

− 40 − mhos

− 2050 2400 pF

− 640 800

− 225 310

− 10 18 ns

r

− 22 35

− 45 75

f

− 35 70

− 18 − ns

r

− 70 −

− 32 −

f

T

− 30 −

− 28 − nC

− 7.5 −

− 19 −

−

0.90

0.75

1.3

−

− 37 −

− 21 −

− 16 −

− 0.035 − µC

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

Vdc

ns

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2

NTP4302, NTB4302

70

7 V

60

5 V 50 40 30

20

, DRAIN CURRENT (AMPS)

D

I

10

0

0 2.5

0.5 1.5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 10 V

4.6 V

3 V 2.8 V

TJ = 25C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.08

0.06

60

4.4 V

4 V

3.8 V

3.4 V

3.2 V

21

ID = 20 A

= 25°C

T

J

, DRAIN CURRENT (AMPS)

D

I

3

0.015

VDS ≥ 10 V

50

40

30

20

10

0.01

TJ = 25°C

TJ = 100°C

TJ = −55°C

0

26

TJ = 25°C

345

V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

VGS = 4.5 V

0.04

0.005

0.02

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0

042610

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

80302010 40 70

, DRAIN−TO−SOURCE RESISTANCE (Ω)

DS(on)

R

Figure 3. On−Resistance versus

Gate−to−Source V oltage

1.6

1.4

1.2

0.8

1

ID = 20 A

V

= 10 V

GS

10000

1000

100

, LEAKAGE (nA)

DSS

I

VGS = 10 V

0

ID, DRAIN CURRENT (AMPS)

50 60

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

10

0.6

−50 50250−25 75 100

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

1

150125

020251510 30

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3

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus V oltage