ON Semiconductor NTP4302, NTB4302 Technical data

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NTP4302, NTB4302

Power MOSFET
74 Amps, 30 Volts

N−Channel TO−220 and D2PAK

Features

• Low R

• Higher Efficiency Extending Battery Life

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• I

T ypical Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery Powered Products: Ie:

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 10 MΩ) V
Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ TC = 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

1. When surface mounted to an FR4 Board using minimum recommended Pad

2. Current limited by internal lead wires.

DS(on)

Specified at Elevated Temperature

DSS

Computers, Printers, Cellular and Cordless Telephones, and PCMCIA
Cards

= 25°C unless otherwise noted)

J

Rating

− Continuous

− Continuous @ T

− Continuous @ T

− Single Pulse (t

Derate above 25°C

Energy − Starting T
(V

= 30 Vdc, VGS = 10 Vdc, L = 5.0 mH

DD

I

= 17 A, VDS = 30 Vdc, RG = 25 Ω)

L(pk)

− Junction−to−Case

− Junction−to−Ambient (Note 1)

Purposes, 1/8″ from case for 10 seconds

Size, (Cu Area 0.412 in

= 25°C

C

= 100°C

C

10 µs)

p

= 25°C

J

2

).

Symbol Value Unit

stg

30 Vdc
30 Vdc

20

74
47

175

80

0.66WW/°C

−55 to
+150

722 mJ

1.55
70

260 °C

V

E

R
R

DSS
DGR

GS

I
I

I

DM

P

AS

θ
θ

T

D
D

D

JC
JA

L

Vdc

Adc

Apk

°C

°C/W

1

2

Gate

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74 AMPERES

30 VOLTS

R

3

Drain

NTx4302
LLYWW

1

Drain

DS(on)

4

4

2

= 9.3 mΩ Max

N−Channel

G

TO−220AB

CASE 221A

STYLE 5

MARKING DIAGRAMS

& PIN ASSIGNMENTS

3
Source

D

S

1

2

3

D2PAK

CASE 418AA

STYLE 2

4

Drain

NTx4302
LLYWW

1

Gate

x = P or B
NTx4302 = Device Code
LL = Location Code
Y = Year
WW = Work Week

Drain

3

2

Source

4

 Semiconductor Components Industries, LLC, 2003

October, 2003 − Rev. 1

ORDERING INFORMATION

Device Package Shipping

NTP4302 TO−220AB 50 Units/Rail
NTB4302 D2PAK 50 Units/Rail
NTB4302T4 D2PAK 800/Tape & Reel

1 Publication Order Number:

NTP4302/D

NTP4302, NTB4302

)

f = 1.0 MHz)

(V

DD

24 Vdc, I

D

Adc

(V

DD

24 Vdc, I

D

Adc

)

V

GS

Vdc) (Note 3)

)

dIS/dt = 100 A/µs) (Note 3)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

= 0 Vdc, ID = 250 µAdc)

(V

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 30 Vdc, VGS = 0 Vdc)

DS

= 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

(V

DS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(V

= VGS, ID = 250 µAdc)

DS

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)

= 10 Vdc, ID = 37 Adc)

(V

GS

(V

= 10 Vdc, ID = 20 Adc)

GS

= 4.5 Vdc, ID = 10 Adc)

(V

GS

Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

(V

= 24 Vdc, ID = 20 Adc,

DD

= 10 Vdc, RG = 2.5 Ω) (Note 3)

GS

20

,

Fall Time t
Turn−On Delay Time t
Rise Time
Turn−Off Delay Time

V

(V

= 24 Vdc, ID = 10 Adc,

DD

= 4.5 Vdc, RG = 2.5 Ω) (Note 3)

GS

10

,

Fall Time t
Gate Charge

(VDS = 24 Vdc, ID = 37 Adc,

V

= 4.5 Vdc) (Note 3

= 4.5

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

(I

= 20 Adc, VGS = 0 Vdc, TJ = 125°C)

S

Reverse Recovery Time

(IS = 20 Adc, VGS = 0 Vdc,
dI

/dt = 100 A/µs) (Note 3

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

C
C
C

t

d(on)

t

d(off)

d(on)

t

d(off)

Q
Q
Q

V

t
t
t

FS

iss
oss
rss

t

t

gs

gd

SD

rr

a

b
RR

30

−

−

−

25

−

−

−

−

−

1.0
10

− − ±100 nAdc

1.0

−

− 6.8

1.9

−3.8

6.8

9.5

3.0

−

9.3

9.3

12.5

− 40 − mhos

− 2050 2400 pF

− 640 800

− 225 310

− 10 18 ns

r

− 22 35

− 45 75

f

− 35 70

− 18 − ns

r

− 70 −

− 32 −

f

T

− 30 −

− 28 − nC

− 7.5 −

− 19 −

−

−

0.90

0.75

1.3

−

− 37 −

− 21 −

− 16 −

− 0.035 − µC

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

Vdc

ns

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2

NTP4302, NTB4302

70

7 V

60

5 V
50
40
30

20

, DRAIN CURRENT (AMPS)

D

I

10

0

0 2.5

0.5 1.5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 10 V

4.6 V

3 V 2.8 V

TJ = 25C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.08

0.06

60

4.4 V

4 V

3.8 V

3.4 V

3.2 V

21

ID = 20 A

= 25°C

T

J

, DRAIN CURRENT (AMPS)

D

I

3

0.015

VDS ≥ 10 V

50

40

30

20

10

0.01

TJ = 25°C

TJ = 100°C

TJ = −55°C

0

26

TJ = 25°C

345

V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

VGS = 4.5 V

0.04

0.005

0.02

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0

042610

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

80302010 40 70

, DRAIN−TO−SOURCE RESISTANCE (Ω)

DS(on)

R

Figure 3. On−Resistance versus

Gate−to−Source V oltage

1.6

1.4

1.2

0.8

1

ID = 20 A

V

= 10 V

GS

10000

1000

100

, LEAKAGE (nA)

DSS

I

VGS = 10 V

0

ID, DRAIN CURRENT (AMPS)

50 60

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

10

0.6

−50 50250−25 75 100

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

1

150125

020251510 30

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3

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus V oltage

NTP4302, NTB4302

6000

VGS = 0 VVDS = 0 V TJ = 25°C

5000

C

iss

4000

3000

C

rss

C

iss

2000

C, CAPACITANCE (pF)

1000

0

10 10

0

V

V

GS

DS

C

oss

C

rss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

VDD = 24 V
I

= 20 A

D

V

= 10 V

GS

100

t

d(off)

t

r

5

Q

V

4

DS

Q

1

T

Q

2

3

2

1

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS

20 20

010 30

30

V

Q

, TOTAL GATE CHARGE (nC)

g

Drain−to−Source Voltage versus Total Charge

25

VGS = 0 V
T

= 25°C

J

t

f

20

15

V

GS

ID = 37 A
T

= 25°C

J

18

12

30

24

6

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

V

t, TIME (ns)

10

t

d(on)

1

1

10

RG, GATE RESISTANCE (Ω)

Figure 9. Resistive Switching Time Variations

versus Gate Resistance

1000

, DRAIN CURRENT (AMPS)

D

I

Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.

VGS = 20 V
SINGLE PULSE

100

T

C

= 25°C

10 µs

100 µs

DS(on)

1 ms

LIMIT

10 ms

dc

10

R
THERMAL LIMIT

1

PACKAGE LIMIT

0.1 101 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

10

5

, SOURCE CURRENT (AMPS)

S

I

0

100

0.5 0.70.6 0.8

Figure 10. Diode Forward Voltage versus Current

800
700
600
500

400
300

200

AVALANCHE ENERGY (mJ)

100

, SINGLE PULSE DRAIN−TO−SOURCE

AS

0

E

25 1251007550 150

0.9

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

ID = 17 A

TJ, STARTING JUNCTION TEMPERATURE (°C)

1

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

4

1.00

NTP4302, NTB4302

SAFE OPERATING AREA

D = 0.5

0.2

0.1

0.10

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.05

0.02

0.01

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

R

(t) = r(t) R

θ

JC

θ

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TC = P

J(pk)

2

(pk)

1

R

θ

0.01

1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01

t, TIME (s)

Figure 13. Thermal Response

di/dt

I

S

t

rr

t

t

a

b

TIME

t

p

0.25 I

S

I

S

(t)

JC

Figure 14. Diode Reverse Recovery Waveform

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5

NTP4302, NTB4302

PACKAGE DIMENSIONS

TO−220 THREE−LEAD

TO−220AB

CASE 221A−09

ISSUE AA

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

STYLE 5:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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6

−T−

SEATING
PLANE

VARIABLE
CONFIGURATION
ZONE

−B−

G

NTP4302, NTB4302

PACKAGE DIMENSIONS

D2PAK

CASE 418AA−01

ISSUE O

C

E

V

4

W

A

231

S

K

W

J

3 PL

D

M

0.13 (0.005) T

M

B

U

NOTES:

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.036 0.51 0.92
E 0.045 0.055 1.14 1.40
F 0.310 −−− 7.87 −−−
G 0.100 BSC 2.54 BSC
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
M 0.280 −−− 7.11 −−−
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

M

F

VIEW W−W VIEW W−W VIEW W−W

123

M

M

F

F

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7

NTP4302, NTB4302

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTP4302/D

8