ON Semiconductor NTP10N40, NTB10N40 Technical data

查询NTMFS4747N供应商

NTP10N40, NTB10N40

Preferred Device

Advance Information

Power MOSFET
10 Amps, 400 Volts

N–Channel TO–220 and D2PAK

Designed for high voltage, high speed switching applications in

power supplies, converters, power motor controls and bridge circuits.

Features

• Higher Current Rating

• Lower R

• Lower Capacitances

• Lower Total Gate Charge

• Tighter V

• Avalanche Energy Specified

T ypical Applications

• Switch Mode Power Supplies

• PWM Motor Controls

• Converters

• Bridge Circuits

DS(on)

Specifications

SD

http://onsemi.com

10 AMPERES

400 VOLTS

R

DS(on)

G

4

= 500 mΩ

N–Channel

D

S

4

MAXIMUM RATINGS (T

Rating

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage

– Continuous
– Non–Repetitive (tp10 ms)

Drain

– Continuous
– Continuous @ 100°C
– Single Pulse (tp10 µs)

Total Power Dissipation

Derate above 25°C

Operating and Storage Temperature

Range

Single Drain–to–Source Avalanche

Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 10 A, L = 10 mH, RG = 25 Ω)

Thermal Resistance

– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)

Maximum Lead Temperature for

Soldering Purposes, 1/8″ from case
for 10 seconds

1. When surface mounted to an FR4 board using the minimum recommended
pad size.

This document contains information on a new product. Specifications and information
herein are subject to change without notice.

= 25°C unless otherwise noted)

C

Symbol Value Unit

DSS
DGR

V

GS

V

GSM

I

D

I

D

I

DM

P

D

TJ, T

stg

E

AS

R

θJC

R

θJA

R

θJA

T

L

400 Vdc
400 Vdc

20
40

10

7.5
35

142

1.14

–55 to 150 °C

500 mJ

0.88

62.5
50

260 °C

Vdc

Adc

Watts

W/°C

°C/W

1

2

3

TO–220AB

CASE 221A

1

2

3

STYLE 5

D2PAK

CASE 418B

STYLE 2

MARKING DIAGRAMS

AND PIN ASSIGNMENTS

Drain

NTP10N40
LLYWW

Gate Source

Drain

NTx10N40 = Device Code
LL = Location Code
Y = Year
WW = Work Week

Drain

NTB10N40
LLYWW

Drain

Gate Source

ORDERING INFORMATION

Device Package Shipping

NTP10N40 TO–220AB 50 Units/Rail
NTB10N40 D2PAK 50 Units/Rail
NTB10N40T4 D2PAK 800/Tape & Reel

Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 1

1 Publication Order Number:

NTP10N40/D

NTP10N40, NTB10N40

)

f = 1.0 MHz)

R

G

9.1 Ω)

(V

DS

320 Vdc, I

D

Adc

dIS/dt = 100 A/µs)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)

Zero Gate Voltage Collector Current

(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ =125°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

ID = 0.25 mA, VDS = V

Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc) R
Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 2.)

Reverse Recovery Time

Reverse Recovery Stored

Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

GS

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

= 25°C unless otherwise noted)

C

(VDS = 25 Vdc, VGS = 0 Vdc,

(VDD = 200 Vdc, ID = 10 Adc,

(VDS = 320 Vdc, ID = 10 Adc,

f = 1.0 MHz

VGS = 10 Vdc,

RG = 9.1 Ω)

VGS = 10 Vdc)

(IS = 10 Adc, VGS = 0 Vdc)

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

10

,

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS(f)

I

GSS(r)

V

GS(th)

DS(on)

V

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

T

Q

1

Q

2

Q

3

V

SD

t

rr

t

a

t

b

Q

RR

L

D

L

S

400

–

–
–

–
–

2.0
–

– 350 500 mOhm

–
–

2.0 7.0 – Mhos

– 1440 2020 pF
– 360 500
– 15 30

– 10 20 ns
– 20 40
– 33 70
– 24 50
– 24 30 nC
– 6.0 –
– 7.0 –
– 12 –

–
–

– 305 –
– 155 –
– 150 –
– 2.5 – µC

–
–

– 7.5 –

–

475

–
–

–
–

2.5

6.5

–
–

0.9

0.8

3.5

4.5

–
–

10

100
100

100

4.0
–

6.0

5.3

1.1
–

–
–

mV/°C

mV/°C

Vdc

µAdc

nAdc

Vdc

Vdc

Vdc

ns

nH

http://onsemi.com

2