ON Semiconductor NTMFS0D8N02P1E User Manual

MOSFET - Power, Single

N-Channel, SO8-FL

25 V, 0.68 mW, 365 A

NTMFS0D8N02P1E

Features

• Small Footprint (5x6mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

V

(BR)DSS

25 V

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R

MAX ID MAX

DS(ON)

0.68 mW @ 10 V

0.80 mW @ 4.5 V

D (5−8)

365 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Note 1)

Power Dissipation
R

Continuous Drain
Current R
(Notes 1, 3)

Power Dissipation
R

Continuous Drain
Current R
(Notes 2, 3)

Power Dissipation
R

Pulsed Drain Current

Single Pulse Drain−to−Source Avalanche
Energy (I

Operating Junction and Storage Temperature
Range

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in

2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.

3. The entire application environment impacts the thermal resistance values

4. 100% UIS tested at L = 1 mH, I

q

JC

(Note 1)

q

JC

q

JA

(Notes 1, 3)

q

JA

q

JA

(Notes 2, 3)

q

JA

= 115.4 Apk, L = 0.1 mH) (Note 4)

L

shown, they are not constants and are only valid for the particular conditions
noted. Actual continuous current will be limited by thermal & electro−mechanical
application board design. R

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

TC = 25°C

Steady

State

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC =85°C 263

TC = 25°C P

TA = 25°C

TA = 85°C 40

TA = 25°C P

TA = 25°C

TA = 85°C 21

TA = 25°C P

is determined by the user’s board design.

q

JC

= 30.7 A.

AS

I

D

D

I

D

D

I

D

D

I

DM

E

AS

TJ, T

STG

T

L

2

pad size, 2 oz Cu pad.

25 V

+16/

−12

365

139 W

55

3.2 W

30

0.93 W

762 A

666 mJ

−55 to
+150

260 °C

V

A

A

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAMS

D

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

1

2EFN = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty

S
S
S

G

2EFN

AYWZZ

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.

D

D

© Semiconductor Components Industries, LLC, 2019

April, 2021 − Rev. 1

1 Publication Order Number:

NTMFS0D8N02P1E/D

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

NTMFS0D8N02P1E

R

q

JC

R

q

JA

R

q

JA

0.9

39

°C/W

135 °C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

DSS

GSS

T

J

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

FS

G

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V, ID = 1 mA 25 V

/

ID = 1 mA. ref to 25°C 16

VGS = 0 V,

V

= 20 V

DS

TJ = 25°C 1

TJ = 125°C 250

VDS = 0 V, VGS = +16 V/−12 V ±100 nA

VGS = VDS, ID = 2 mA 1.2 2.0 V

ID = 2 mA. ref to 25°C −4.4 mV/°C

VGS = 10 V, ID = 46 A 0.44 0.68

VGS = 4.5 V, ID = 43 A 0.54 0.80

VDS = 5 V, ID = 46 A 307 S

TA = 25°C 0.48

8600

VGS = 0 V, VDS = 13 V, f = 1 MHz

2285

129

52

10

VGS = 4.5 V, VDS = 13 V; ID = 46 A

21

9

VGS = 10 V, VDS = 13 V; ID = 46 A 116 nC

45

VGS = 4.5 V, VDS = 13 V,

= 46 A, RG = 6.0 W

I

D

24

68

20

23

VGS = 10 V, VDS = 13 V,

= 46 A, RG = 6.0 W

I

D

6.8

123

19

VGS = 0 V,

I

= 46 A

S

TJ = 25°C 0.77 1.2

TJ = 125°C 0.62

mV/°C

mA

mW

W

pF

nC

ns

ns

V

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NTMFS0D8N02P1E

ELECTRICAL CHARACTERISTICS (T

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Reverse Recovery Time

Reverse Recovery Charge Q

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

= 25°C unless otherwise specified)

J

t

RR

RR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 46 A

64 ns

87 nC

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