ON Semiconductor NTMFS0D7N03CG User Manual

MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 0.65 mW, 409 A

NTMFS0D7N03CG

Features

• Wide SOA to Improve Inrush Current Management

• Advanced Package (5x6mm) with Excellent Thermal Conduction

• Ultra Low R

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Hot Swap Application

• Power Load Switch

• Battery Management and Protection

to Improve System Efficiency

DS(on)

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

0.65 mW @ 10 V

D (5−8)

409 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Note 2)

Power Dissipation
R

Continuous Drain
Current R
(Notes 1, 2)

Power Dissipation
R

Pulsed Drain Current

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Operating Junction and Storage Temperature
Range

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in

2. The entire application environment impacts the thermal resistance values shown,

q

JC

(Note 2)

q

JC

q

JA

(Notes 1, 2)

q

JA

= 40.8 Apk)

L

they are not constants and are only valid for the particular conditions noted.

= 25°C unless otherwise stated)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC =100°C 289

TC = 25°C P

TA = 25°C

TA = 100°C 42

TA = 25°C P

TJ, T

2

pad, 2 oz Cu pad.

I

E

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

STG

30 V

±20 V

409

187 W

59

4.0 W

900 A

155 A

1080 mJ

−55 to
+175

260 °C

A

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAMS

D

G

S
S
S

0D7NG
AYWZZ

D

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

D

D

© Semiconductor Components Industries, LLC, 2019

April, 2021 − Rev. 4

1 Publication Order Number:

NTMFS0D7N03CG/D

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

NTMFS0D7N03CG

R

q

JC

R

q

JA

R

q

JA

0.8

38

°C/W

134 °C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

ID = 250 mA. ref to 25°C

VGS = 0 V,

V

= 30 V

DS

TJ = 125°C 100

TJ = 25°C 1.0

VDS = 0 V, VGS = 20 V 100 nA

30 V

11

mV/°C

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

GS(TH)

DS(on)

FS

G

VGS = VDS, ID = 280 mA

ID = 280 mA. ref to 25°C

VGS = 10 V, ID = 30 A 0.55 0.65

VDS = 3 V, ID = 30 A 100 S

TA = 25°C 0.4

1.3 2.2 V

−5.1 mV/°C

mW

W

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, VDS = 15 V, f = 1 MHz

VGS = 10 V, VDS = 15 V; ID = 30 A

12300

5800

88

147

19

34

8.6

pF

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 10 V, VDS = 15 V,

= 30 A, RG = 3.0 W

I

D

28

13

85

16

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

V

SD

RR

RR

VGS = 0 V,

I

= 30 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

V

= 15 V, IS = 30 A

DS

TJ = 25°C 0.78 1.2

TJ = 125°C 0.62

98 ns

143 nC

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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NTMFS0D7N03CG

TYPICAL CHARACTERISTICS

500

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

D

I

100

50

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

6

5

4

3

2

5.5 V

VGS = 10 V to 6 V

TJ = 25°C
I

D

= 30 A

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

500

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

D

I

100

50

3.02.52.01.51.00.50

0

1.0

0.8

0.6

0.4

VDS = 3 V

1.51.0

TJ = 25°C

TJ = 25°C

TJ = 125°C

1.5 3.5

TJ = −55°C

2.5 4.0

3.02.00 4.5 5.0

VGS = 10 V

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

1

0

4

3

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

8765 40

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.0
VGS = 10 V

= 30 A

I

D

1.5

1.0

0.5

0

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

50

Figure 5. On−Resistance Variation with

Temperature

150

, DRAIN−TO−SOURCE RESISTANCE (mW)

109

DS(on)

R

1.E+05

1.E+04

1.E+03

, LEAKAGE (nA)

DSS

1.E+02

I

1.E+01

17512510075250−25−50

0.2

0

10 20 35 45

30 5025155

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

15

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

302520105

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