ON Semiconductor NTMD6N04, NVMD6N04 User Manual

NTMD6N04, NVMD6N04

MOSFET – Power, Dual

N-Channel, SOIC-8

40 V, 5.8 A

Features

• Designed for use in low voltage, high speed switching applications

• Ultra Low On−Resistance Provides

Higher Efficiency and Extends Battery Life

− R

− R

• Miniature SOIC−8 Surface Mount Package Saves Board Space

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• NVMD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Converters

• Computers

• Printers

• Cellular and Cordless Phones

• Disk Drives and Tape Drives

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Drain Current (Note 1)

− Continuous @ T

− Single Pulse (tp ≤ 10 ms)

Drain Current (Note 2)

− Continuous @ T

Total Power Dissipation
@ T

= 25°C (Note 1)

A

@ TA = 25°C (Note 2)

Operating and Storage Temperature
Range

Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(VDD = 40 Vdc, VGS = 5.0 Vdc,
Vdc, Peak IL = 7.0 Apk,
L = 10 mH, R

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for
Soldering Purposes for 10 Sec

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s

= 0.027 W, VGS = 10 V (Typ)

DS(on)

= 0.034 W, VGS = 4.5 V (Typ)

DS(on)

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

= 25°C

A

= 25°C

J

= 25 W)

G

Symbol Value Unit

DSS

I

I

DM

I

P

TJ, T

E

R

T

GS

D

D

AS

q

D

stg

JA

L

40 V

"20 V

5.8
29

4.6 Adc

2.0

1.29

−55 to +150 °C

245 mJ

62.5
97

260 °C

Adc
Apk

W

°C/W

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G

V

DSS

40 V

R

27 mW @ V

N−Channel

D

S

Typ ID Max

DS(ON)

= 10 V

GS

G

5.8 A

D

S

MARKING DIAGRAM &

PIN ASSIGNMENT

8

1

SOIC−8
CASE 751
STYLE 11

E6N04 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

D1 D1 D2 D2

8

E6N04

AYWW G

G

1

S1 G1 S2 G2

ORDERING INFORMATION

Device Package Shipping

NTMD6N04R2G SOIC−8

(Pb−Free)

NVMD6N04R2G* SOIC−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

2500 / Tape &

2500 / Tape &

†

Reel

Reel

© Semiconductor Components Industries, LLC, 2013

July, 2019 − Rev. 2

1 Publication Order Number:

NTMD6N04R2/D

NTMD6N04, NVMD6N04

2. When surface mounted to an FR4 board using 1″ pad size, t = steady state

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NTMD6N04, NVMD6N04

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 Vdc, ID = 250 mA)

(V

GS

Temperature Coefficient (Positive)

V

Zero Gate Voltage Drain Current

(V

= 40 Vdc, VGS = 0 Vdc, TJ = 25°C)

DS

(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current

(V

= ±20 Vdc, VDS = 0 Vdc)

GS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

= VGS, ID = 250 mAdc)

(V

DS

Temperature Coefficient (Negative)

Static Drain−to−Source On−State Resistance

(V

= 10 Vdc, ID = 5.8 Adc)

GS

= 4.5 Vdc, ID = 3.9 Adc)

(V

GS

Forward Transconductance

(V

= 10 Vdc, ID = 5.8 Adc)

DS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = 32 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

(VDD = 20 Vdc, ID = 5.8 A,

V

= 10 V,

GS

= 6 W)

R

G

Fall Time t

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

(VDD = 20 Vdc, ID = 5.8 A,

V

= 4.5 V,

GS

= 6 W)

R

G

Fall Time t

Gate Charge

(VDS = 20 Vdc,

V

= 10 Vdc,

GS

ID = 5.8 A)

BODY−DRAIN DIODE RATINGS (Note 3)

Diode Forward On−Voltage (IS = 1.7 Adc, VGS = 0 V)

(I

= 1.7 Adc, VGS = 0 V, TJ = 150°C)

S

Reverse Recovery Time

(IS = 1.7 A, VGS = 0 V,

/dt = 100 A/ms)

dI

S

Reverse Recovery Stored Charge

= 1.7 A, dIS/dt = 100 A/ms, VGS = 0 V)

(I

S

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

Vdc

V

(BR)DSS

(BR)DSS/TJ

I

DSS

I

GSS

40

−

−

−

47
45

−

−

−

−

1.0
10

− − "100

mV/°C

mAdc

nAdc

Vdc

V

GS(th)

V

GS(th)/TJ

R

DS(on)

g

FS

C

iss

oss

rss

t

d(on)

d(off)

t

d(on)

d(off)

Q

Q

gs

Q

gd

V

SD

t

rr

t

a

t

b

Q

RR

r

f

r

f

T

1.0

−

−

−

1.9

4.7

0.027

0.034

3.0

−

0.034

0.043

mV/°C

Mhos

− 8.12 −

− 723 900

− 156 225

− 53 75

− 10 18

− 20 35

− 45 70

− 40 65

− 15 −

− 55 −

− 30 −

− 35 −

− 20 30

− 2.5 −

− 5.5 −

−

−

0.76

0.56

1.1

−

− 23 −

− 16 −

− 7 −

− 20 − nC

Vdc

W

pF

ns

ns

nC

ns

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