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NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
Features
• Ultra Low R
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SO−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO−8 Mounting Information Provided
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, for
example, Computers, Printers, Cellular and Cordless Telephones and
PCMCIA Cards
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 M) V
Gate−to−Source Voltage − Continuous V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
1. Mounted onto a 2″ square FR−4 Board
(1″ sq. 2 oz. Cu 0.06″ thick single sided), t < 10 seconds.
2. Mounted onto a 2″ square FR−4 Board
(1″ sq. 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
DS(on)
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
20 V
20 V
12 V
62.5
2.0
6.5
5.5
50
102
1.22
5.07
4.07
40
172
0.73
3.92
3.14
30
= 25°C
A
= 25°C
A
= 70°C
A
= 25°C
A
= 25°C
A
= 70°C
A
= 25°C
A
= 25°C
A
= 70°C
A
R
R
R
DSS
DGR
GS
θ
P
I
I
I
DM
θ
P
I
I
I
DM
θ
P
I
I
I
DM
JA
D
D
D
JA
D
D
D
JA
D
D
D
°C/W
°C/W
°C/W
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V
DSS
20 V 35 mΩ @ VGS = 4.5 V 6.0 A
W
A
A
A
Source 1
W
A
A
A
W
A
A
A
Gate 1
Source 2
Gate 2
R
TYP ID MAX
DS(ON)
N−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
1
2
E6N02
3
LYWW
4
(Top View)
E6N02 = Device Code
L = Assembly Location
Y = Year
WW = Work Week
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device Package Shipping
NTMD6N02R2 SO−8 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
†
Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 2
1 Publication Order Number:
NTMD6N02R2/D
NTMD6N02R2
)
f
MHz)
R
G
6.0 Ω)
R
G
6.0 Ω)
(V
16 Vdc
GS
MAXIMUM RATINGS (T
= 25°C unless otherwise noted) (continued)
J
Rating
Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(V
= 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 Ω)
DD
Maximum Lead Temperature for Soldering Purposes for 10 seconds T
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted) (Note 5)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
= 0 Vdc, ID = 250 Adc)
GS
V
(BR)DSS
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
= 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
DS
(V
= 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
DS
Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) I
Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc) I
I
DSS
GSS
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
= VGS, ID = −250 Adc)
(V
DS
V
GS(th)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
= 4.5 Vdc, ID = 6.0 Adc)
GS
= 4.5 Vdc, ID = 4.0 Adc)
(V
GS
(V
= 2.7 Vdc, ID = 2.0 Adc)
GS
(V
= 2.5 Vdc, ID = 3.0 Adc)
GS
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc) g
R
DS(on)
FS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
= 1.0
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS (Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 6.0 Adc,
VGS = 4.5 Vdc,
= 6.0 Ω)
R
G
Fall Time
Turn−On Delay Time t
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
= 6.0 Ω)
R
G
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
=
=
DS
V
= 4.5 Vdc,
GS
ID = 6.0 Adc)
,
t
d(on)
t
d(off)
d(on)
t
d(off)
Q
Q
Q
t
r
t
f
t
r
t
f
tot
gs
gd
5. Handling precautions to protect against electrostatic discharge is mandatory
6. Indicates Pulse Test: Pulse Width =300 s max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
Symbol Value Unit
stg
E
AS
L
−55 to +150 °C
360 mJ
260 °C
Vdc
20
−
−
19.2
−
−
mV/°C
Adc
−
−
−
−
1.0
10
− − 100 nAdc
− − −100 nAdc
Vdc
0.6
−
0.9
−3.0
1.2
−
mV/°C
Ω
−
−
−
−
0.028
0.028
0.033
0.035
0.035
0.043
0.048
0.049
− 10 − Mhos
− 785 1100 pF
− 260 450
− 75 180
− 12 20
ns
− 50 90
− 45 75
− 80 130
− 11 18
ns
− 35 65
− 45 75
− 60 110
− 12 20
nC
− 1.5 −
− 4.0 −
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2
NTMD6N02R2
)
dIS/dt
100 A/s)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (continued) (Note 8)
C
Characteristic Symbol Min Typ Max Unit
BODY−DRAIN DIODE RATINGS (Note 9)
Diode Forward On−Voltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(I
= 6.0 Adc, VGS = 0 Vdc)
S
(I
= 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
S
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/s
=
Reverse Recovery Stored Charge Q
8. Handling precautions to protect against electrostatic discharge is mandatory.
9. Indicates Pulse Test: Pulse Width =300 s max, Duty Cycle = 2%.
12
10
10 V
2.5 V
4.5 V
3.2 V
2.0 V
TJ = 25°C
12
10
8
1.8 V
6
4
, DRAIN CURRENT (AMPS)
D
2
I
VGS = 1.5 V
, DRAIN CURRENT (AMPS)
D
I
8
6
4
2
V
SD
t
rr
t
a
t
b
RR
VDS ≥ 10 V
−
−
−
− 30 −
0.83
0.88
0.75
1.1
1.2
Vdc
−
ns
− 15 −
− 15 −
− 0.02 − C
100°C
25°C
TJ = −55°C
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
, DRAIN−TO−SOURCE RESISTANCE (OHMS)
DS(on)
R
Figure 1. On−Region Characteristics
ID = 6.0 A
T
= 25°C
J
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
1.751.51.2510.750.50.250
0
2.521.510.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
TJ = 25°C
0.04
VGS = 2.5 V
0.03
4.5 V
0.02
, DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.010
1086420
DS(on)
R
ID, DRAIN CURRENT (AMPS)
7531
11913
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
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3
NTMD6N02R2
1.6
1.4
1.2
1
(NORMALIZED)
0.8
, DRAIN−TO−SOURCE RESISTANCE
0.6
DS(on)
R
2500
2000
1500
C
iss
C
rss
1000
C, CAPACITANCE (pF)
500
0
10 0 5 105
ID = 6.0 A
V
= 4.5 V
GS
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS = 0 V
V
GS
C
rss
VGS = 0 V
V
DS
TJ = 25°C
C
C
oss
15 20
iss
1501251007550250−25−50
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
V
1000
VGS = 0 V
100
10
, LEAKAGE (nA)
1
DSS
I
0.1
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage Current
5
4
3
2
1
0
0
Q1
V
DS
TJ = 125°C
100°C
25°C
20161284
versus V oltage
QT
V
GS
ID = 6 A
V
Q2
48 16
DS
V
GS
T
= 25°C
J
12
= 16 V
= 4.5 V
Qg, TOTAL GATE CHARGE (nC)
20
16
12
8
4
0
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDS = 16 V
I
= 6.0 A
D
= 4.5 V
V
GS
100
t
t
d(off)
t
d(on)
f
t
r
t, TIME (ns)
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
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4
Figure 8. Gate−T o−Source and Drain−To−Source
Voltage versus Total Charge
NTMD6N02R2
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
5
VGS = 0 V
T
= 25°C
4
J
3
2
1
, SOURCE CURRENT (AMPS)
S
I
0
0 0.2 0.4 0.6
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
0.8 1.0
Figure 10. Diode Forward Voltage versus Current
I
S
1.2
di/dt
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
100 µs
1 ms
10 ms
1
, DRAIN CURRENT (AMPS)
D
I
0.1
0.1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
10
dc
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
t
rr
t
t
a
b
TIME
1
0.1
0.01
THERMAL RESISTANCE
Rthja(t), EFFECTIVE TRANSIENT
0.001
1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
I
S
0.25 I
S
t
p
Figure 12. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
t, TIME (s)
R
(t) = r(t) R
θ
JC
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
− TC = P
J(pk)
2
(pk)
1.0E+02 1.0E+03
1
R
(t)
θ
JC
Figure 13. Thermal Response
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5
−Y−
−Z−
NTMD6N02R2
PACKAGE DIMENSIONS
SO−8
CASE 751−07
ISSUE AB
−X−
B
H
A
58
1
4
G
D
0.25 (0.010) Z
M
S
SXS
Y
0.25 (0.010)
C
SEATING
PLANE
M
0.10 (0.004)
M
Y
K
N
X 45
M
J
SOLDERING FOOTPRINT*
1.52
0.060
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
INCHES
7.0
0.275
0.6
0.024
4.0
0.155
1.270
0.050
SCALE 6:1
inches
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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For additional information, please contact your
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NTMD6N02R2/D
6
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