查询NTMD6N02R2供应商
NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
Features
• Ultra Low R
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SO−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO−8 Mounting Information Provided
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, for
example, Computers, Printers, Cellular and Cordless Telephones and
PCMCIA Cards
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 M) V
Gate−to−Source Voltage − Continuous V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
1. Mounted onto a 2″ square FR−4 Board
(1″ sq. 2 oz. Cu 0.06″ thick single sided), t < 10 seconds.
2. Mounted onto a 2″ square FR−4 Board
(1″ sq. 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
DS(on)
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
20 V
20 V
12 V
62.5
2.0
6.5
5.5
50
102
1.22
5.07
4.07
40
172
0.73
3.92
3.14
30
= 25°C
A
= 25°C
A
= 70°C
A
= 25°C
A
= 25°C
A
= 70°C
A
= 25°C
A
= 25°C
A
= 70°C
A
R
R
R
DSS
DGR
GS
θ
P
I
I
I
DM
θ
P
I
I
I
DM
θ
P
I
I
I
DM
JA
D
D
D
JA
D
D
D
JA
D
D
D
°C/W
°C/W
°C/W
http://onsemi.com
V
DSS
20 V 35 mΩ @ VGS = 4.5 V 6.0 A
W
A
A
A
Source 1
W
A
A
A
W
A
A
A
Gate 1
Source 2
Gate 2
R
TYP ID MAX
DS(ON)
N−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
1
2
E6N02
3
LYWW
4
(Top View)
E6N02 = Device Code
L = Assembly Location
Y = Year
WW = Work Week
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device Package Shipping
NTMD6N02R2 SO−8 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
†
Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 2
1 Publication Order Number:
NTMD6N02R2/D
NTMD6N02R2
)
f
MHz)
R
G
6.0 Ω)
R
G
6.0 Ω)
(V
16 Vdc
GS
MAXIMUM RATINGS (T
= 25°C unless otherwise noted) (continued)
J
Rating
Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(V
= 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 Ω)
DD
Maximum Lead Temperature for Soldering Purposes for 10 seconds T
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted) (Note 5)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
= 0 Vdc, ID = 250 Adc)
GS
V
(BR)DSS
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
= 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
DS
(V
= 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
DS
Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) I
Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc) I
I
DSS
GSS
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
= VGS, ID = −250 Adc)
(V
DS
V
GS(th)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
= 4.5 Vdc, ID = 6.0 Adc)
GS
= 4.5 Vdc, ID = 4.0 Adc)
(V
GS
(V
= 2.7 Vdc, ID = 2.0 Adc)
GS
(V
= 2.5 Vdc, ID = 3.0 Adc)
GS
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc) g
R
DS(on)
FS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
= 1.0
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS (Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 6.0 Adc,
VGS = 4.5 Vdc,
= 6.0 Ω)
R
G
Fall Time
Turn−On Delay Time t
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
= 6.0 Ω)
R
G
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
=
=
DS
V
= 4.5 Vdc,
GS
ID = 6.0 Adc)
,
t
d(on)
t
d(off)
d(on)
t
d(off)
Q
Q
Q
t
r
t
f
t
r
t
f
tot
gs
gd
5. Handling precautions to protect against electrostatic discharge is mandatory
6. Indicates Pulse Test: Pulse Width =300 s max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
Symbol Value Unit
stg
E
AS
L
−55 to +150 °C
360 mJ
260 °C
Vdc
20
−
−
19.2
−
−
mV/°C
Adc
−
−
−
−
1.0
10
− − 100 nAdc
− − −100 nAdc
Vdc
0.6
−
0.9
−3.0
1.2
−
mV/°C
Ω
−
−
−
−
0.028
0.028
0.033
0.035
0.035
0.043
0.048
0.049
− 10 − Mhos
− 785 1100 pF
− 260 450
− 75 180
− 12 20
ns
− 50 90
− 45 75
− 80 130
− 11 18
ns
− 35 65
− 45 75
− 60 110
− 12 20
nC
− 1.5 −
− 4.0 −
http://onsemi.com
2
Loading...