ON Semiconductor NTMD3P03R2 Technical data

Download

查询NTMD3P03R2供应商

NTMD3P03R2

Power MOSFET

−3.05 Amps, −30 Volts

Dual P−Channel SO−8

Features

• High Efficiency Components in a Dual SO−8 Package

• High Density Power MOSFET with Low R

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Avalanche Energy Specified

• Mounting Information for the SO−8 Package is Provided

Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery−Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

MOSFET MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V Gate−to−Source Voltage − Continuous V Thermal Resistance −

Junction−to−Ambient (Note 1) Total Power Dissipation @ T Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)

Thermal Resistance −

Junction−to−Ambient (Note 2) Total Power Dissipation @ T Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)

Thermal Resistance −

Junction−to−Ambient (Note 3) Total Power Dissipation @ T Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)

Operating and Storage

Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= −30 Vdc, VGS = −4.5 Vdc, Peak

= −7.5 Apk, L = 5 mH, RG = 25 Ω)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

1. Minimum FR−4 or G−10 PCB, t = Steady State.

2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.

3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.

4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

= 25°C

= 25°C unless otherwise noted)

= 25°C

DSS

I I

TJ, T

DS(on)

D D D

stg

−30 V ±20 V

171

0.73

−2.34

−1.87

−8.0

100

1.25

−3.05

−2.44

−12

62.5

2.0

−3.86

−3.1

−15

−55 to +150

140 mJ

260 °C

°C/W

°C

http://onsemi.com

DSS

−30 V 85 mΩ @ −10 V −3.05 A

TYP ID MAX

DS(ON)

P−Channel

MARKING DIAGRAM

A A A

SO−8 CASE 751 STYLE 11

ED3P03 = Device Code L = Assembly Location Y = Year WW = Work Week

PIN ASSIGNMENT

1 2

3 4

Top View

8 7

6 5

Source−1

Gate−1

Source−2

Gate−2

ED3P03 LYWW

Drain−1 Drain−1 Drain−2 Drain−2

ORDERING INFORMATION

Device Package Shipping

NTMD3P03R2 SO−8 2500/Tape & Reel †For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

†

 Semiconductor Components Industries, LLC, 2004

May, 2004 − Rev. 1

1 Publication Order Number:

NTMD3P03R2/D

NTMD3P03R2

)

MHz)

6.0 Ω)

24 Vdc

)

dIS/dt

100 A/µs)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Note 5)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 Vdc, ID = −250 µAdc)

Temperature Coefficient (Positive) Zero Gate Voltage Drain Current

= −24 Vdc, VGS = 0 Vdc, TJ = 25°C)

= −24 Vdc, VGS = 0 Vdc, TJ = 125°C)

= −30 Vdc, VGS = 0 Vdc, TJ = 25°C)

Gate−Body Leakage Current

= −20 Vdc, VDS = 0 Vdc)

Gate−Body Leakage Current

= +20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage

= VGS, ID = −250 µAdc)

Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance

= −10 Vdc, ID = −3.05 Adc)

= −4.5 Vdc, ID = −1.5 Adc)

Forward Transconductance (VDS = −15 Vdc, ID = −3.05 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

(VDS = −24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

= 1.0

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Notes 6 and 7)

Turn−On Delay Time Rise Time Turn−Off Delay Time

(VDD = −24 Vdc, ID = −3.05 Adc,

VGS = −10 Vdc,

= 6.0 Ω)

Fall Time Turn−On Delay Time t Rise Time Turn−Off Delay Time

(VDD = −24 Vdc, ID = −1.5 Adc,

VGS = −4.5 Vdc,

= 6.0 Ω)

Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge

=−

= −

= −10 Vdc,

ID = −3.05 Adc)

BODY−DRAIN DIODE RATINGS (Note 6)

Diode Forward On−Voltage

(IS = −3.05 Adc, VGS = 0 V)

= −3.05 Adc, VGS = 0 V, TJ = 125°C)

Reverse Recovery Time

(IS = −3.05 Adc, VGS = 0 Vdc,

/dt = 100 A/µs

Reverse Recovery Stored Charge Q

5. Handling precautions to protect against electrostatic discharge is mandatory.

6. Indicates Pulse Test: Pulse Width =300 µs max, Duty Cycle = 2%.

7. Switching characteristics are independent of operating junction temperature.

(BR)DSS

DSS

GSS

GS(th)

DS(on)

C C C

d(on)

d(off)

d(on)

d(off)

t t t

iss oss rss

f tot gs gd

b RR

−30

−

−30

−

−1.0

−20

−2.0

mV/°C

− − −100

− − 100

−1.0

−

−1.7

3.6

0.063

0.090

−2.5

−

0.085

0.125

− 5.0 − Mhos

− 520 750 pF

− 170 325

− 70 135

− 12 22

− 16 30

− 45 80

− 16 −

− 42 −

− 32 −

− 35 −

− 16 25

− 2.0 −

− 4.5 −

−

−0.96

−0.78

−1.25

−

− 34 −

− 18 −

− 16 −

− 0.03 − µC

Vdc

µAdc

nAdc

Vdc

Ω

Vdc

http://onsemi.com

NTMD3P03R2

TYPICAL ELECTRICAL CHARACTERISTICS

VGS = −10 V

VGS = −8 V

VGS = −6 V

TJ = 25°C

, DRAIN CURRENT (AMPS)

−I 0

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

VGS = −5 V

0.50.25

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.7

0.6

0.5

0.4

VGS = −2.6 V

0.75

VGS = −4.4 V

VGS = −4 V

VGS = −4.6 V

VGS = −4.8 V

VGS = −3.6 V

VGS = −2.8 V

VGS = −3.2 V

VGS = −3 V

1 1.25 1.5 1.75

ID = −3.05 A T

= 25°C

VDS > = −10 V

, DRAIN CURRENT (AMPS)

−I 0

14325

−V

0.7

0.6

0.5

0.4

TJ = 100°C

TJ = 25°C

TJ = −55°C

, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID = −1.5 A T

= 25°C

0.3

0.2

0.1

, DRAIN−TO−SOURCE RESISTANCE (Ω)

DS(on)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

0.25 TJ = 25°C

0.2

0.15

0.1

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0.05

13254

DS(on)

−ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance vs. Drain Current and

Voltage

VGS = −4.5 V

VGS = −10 V

Gate Voltage

0.3

0.2

0.1

, DRAIN−TO−SOURCE RESISTANCE (Ω)

765

DS(on)

654

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance vs. Gate−to−Source

Voltage

1.6 ID = −3.05 A V

= −10 V

1.4

1.2

(NORMALIZED)

0.8

, DRAIN−TO−SOURCE RESISTANCE

−50 50 75250 150−25

100 125

0.6

DS(on)

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On Resistance Variation with

Temperature

http://onsemi.com

NTMD3P03R2

10000

VGS = 0 V

TJ = 150°C

1200

1000

VDS = 0 V VGS = 0 V

iss

1000

800

TJ = 125°C

, LEAKAGE (nA)

100

DSS

6182214 2610 30

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

600

400

C, CAPACITANCE (pF)

rss

200

TJ = 25°C

10 15 20105530025

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

iss

oss

rss

−V

VOLTAGE (VOLTS)

Figure 7. Drain−to−Source Leakage Current

Figure 8. Capacitance Variation

vs. Voltage

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0 8 16 1 100

−V

246 101214

ID = −3.05 A T

= 25°C

Qg, TOTAL GATE CHARGE (nC)

1000

100

t, TIME (ns)

VDS = −24 V I

= −3.05 A

= −10 V

d(off)

d(on)

RG, GATE RESISTANCE (Ω)

Figure 9. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

VDS = −24 V I

= −1.5 A

= −4.5 V

100

t, TIME (ns)

1 10010 0.2 1 1.20.80.60.4

d(off)

d(on)

, SOURCE CURRENT (AMPS)

RG, GATE RESISTANCE (Ω)

Figure 11. Resistive Switching Time Variation

vs. Gate Resistance

http://onsemi.com

Figure 10. Resistive Switching Time Variation

vs. Gate Resistance

VGS = 0 V T

= 25°C

2.5

1.5

0.5

−VSD, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Diode Forward Voltage vs. Current

100

VGS = 12 V SINGLE PULSE

= 25°C

1.0

0.1

, DRAIN CURRENT (AMPS)

−I

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

0.01 1 10010

1.0

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 13. Maximum Rated Forward Biased

Safe Operating Area

1.0 D = 0.5

10 ms

1.0 ms

NTMD3P03R2

di/dt

TIME

0.25 I

Figure 14. Diode Reverse Recovery Waveform

0.2

0.1

0.05

0.02

, EFFECTIVE TRANSIENT

THERMAL RESPONSE

thja(t)

0.01 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03

Single Pulse

0.01

Chip Junction

0.0014 F 0.0073 F 0.022 F 0.105 F 0.484 F

Normalized to R

2.32 Ω 18.5 Ω 50.9 Ω 37.1 Ω 56.8 Ω

at Steady State (1″ pad)

24.4 Ω

3.68 F Ambient

t, TIME (s)

Figure 15. FET Thermal Response

http://onsemi.com

−Y−

−Z−

NTMD3P03R2

PACKAGE DIMENSIONS

SO−8

CASE 751−07

ISSUE AB

−X−

0.25 (0.010) Z

SXS

0.25 (0.010)

SEATING PLANE

0.10 (0.004)

X 45



SOLDERING FOOTPRINT*

1.52

0.060

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020

G 1.27 BSC 0.050 BSC

H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050

M 0 8 0 8



N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 11:

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

INCHES

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1



inches



*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your local Sales Representative.

NTMD3P03R2/D

ON Semiconductor NTMD3P03R2 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual