ON Semiconductor NTMD3P03R2 Technical data
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NTMD3P03R2
Power MOSFET
−3.05 Amps, −30 Volts
Dual P−Channel SO−8
Features
• High Efficiency Components in a Dual SO−8 Package
• High Density Power MOSFET with Low R
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• I
Specified at Elevated Temperature
DSS
• Avalanche Energy Specified
• Mounting Information for the SO−8 Package is Provided
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MOSFET MAXIMUM RATINGS (T
Rating Symbol Value Unit
Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
= −30 Vdc, VGS = −4.5 Vdc, Peak
(V
DD
I
= −7.5 Apk, L = 5 mH, RG = 25 Ω)
L
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
1. Minimum FR−4 or G−10 PCB, t = Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), t = steady state.
3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
= 25°C
J
= 25°C unless otherwise noted)
J
= 25°C
A
= 25°C
A
= 25°C
A
DSS
R
P
I
I
I
DM
R
P
I
I
I
DM
R
P
I
I
I
DM
TJ, T
E
T
DS(on)
GS
θ
JA
D
D
D
θ
JA
D
D
D
θ
JA
D
D
D
stg
AS
L
−30 V
±20 V
171
0.73
−2.34
−1.87
−8.0
100
1.25
−3.05
−2.44
−12
62.5
2.0
−3.86
−3.1
−15
−55 to
+150
140 mJ
260 °C
°C/W
°C/W
°C/W
W
W
W
°C
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V
DSS
−30 V 85 mΩ @ −10 V −3.05 A
R
TYP ID MAX
DS(ON)
P−Channel
D
G
S
MARKING
DIAGRAM
A
A
A
A
A
A
A
A
A
8
1
SO−8
CASE 751
STYLE 11
ED3P03 = Device Code
L = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
1
2
3
4
Top View
8
7
6
5
Source−1
Gate−1
Source−2
Gate−2
ED3P03
LYWW
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device Package Shipping
NTMD3P03R2 SO−8 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
†
Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 1
1 Publication Order Number:
NTMD3P03R2/D
NTMD3P03R2
)
f
MHz)
R
G
6.0 Ω)
R
G
6.0 Ω)
(V
24 Vdc
GS
)
dIS/dt
100 A/µs)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Note 5)
J
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
= 0 Vdc, ID = −250 µAdc)
(V
GS
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
= −24 Vdc, VGS = 0 Vdc, TJ = 25°C)
DS
= −24 Vdc, VGS = 0 Vdc, TJ = 125°C)
(V
DS
(V
= −30 Vdc, VGS = 0 Vdc, TJ = 25°C)
DS
Gate−Body Leakage Current
(V
= −20 Vdc, VDS = 0 Vdc)
GS
Gate−Body Leakage Current
(V
= +20 Vdc, VDS = 0 Vdc)
GS
ON CHARACTERISTICS
Gate Threshold Voltage
(V
= VGS, ID = −250 µAdc)
DS
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
= −10 Vdc, ID = −3.05 Adc)
GS
= −4.5 Vdc, ID = −1.5 Adc)
(V
GS
Forward Transconductance (VDS = −15 Vdc, ID = −3.05 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
= 1.0
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −24 Vdc, ID = −3.05 Adc,
VGS = −10 Vdc,
= 6.0 Ω)
R
G
Fall Time
Turn−On Delay Time t
Rise Time
Turn−Off Delay Time
(VDD = −24 Vdc, ID = −1.5 Adc,
VGS = −4.5 Vdc,
= 6.0 Ω)
R
G
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
=−
= −
DS
= −10 Vdc,
V
GS
ID = −3.05 Adc)
,
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = −3.05 Adc, VGS = 0 V)
(I
= −3.05 Adc, VGS = 0 V, TJ = 125°C)
S
Reverse Recovery Time
(IS = −3.05 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/µs
=
Reverse Recovery Stored Charge Q
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width =300 µs max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
V
(BR)DSS
I
DSS
I
GSS
I
GSS
V
GS(th)
R
DS(on)
C
C
C
t
d(on)
t
d(off)
d(on)
t
d(off)
Q
Q
Q
V
t
t
t
FS
iss
oss
rss
t
r
t
f
t
r
t
f
tot
gs
gd
SD
rr
a
b
RR
−30
−
−
−
−
−
−30
−
−
−
−
−
−1.0
−20
−2.0
mV/°C
− − −100
− − 100
−1.0
−
−
−
−1.7
3.6
0.063
0.090
−2.5
−
0.085
0.125
− 5.0 − Mhos
− 520 750 pF
− 170 325
− 70 135
− 12 22
− 16 30
− 45 80
− 45 80
− 16 −
− 42 −
− 32 −
− 35 −
− 16 25
− 2.0 −
− 4.5 −
−
−
−0.96
−0.78
−1.25
−
− 34 −
− 18 −
− 16 −
− 0.03 − µC
Vdc
µAdc
nAdc
nAdc
Vdc
Ω
ns
ns
nC
Vdc
ns
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