ON Semiconductor NTMD2C02R2 Technical data

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NTMD2C02R2

Preferred Device

Power MOSFET 2 Amps, 20 Volts

Complementary SO–8, Dual

These miniature surface mount MOSFET s feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

• Ultra Low R

Provides Higher Efficiency and Extends

DS(on)

Battery Life

• Logic Level Gate Drive – Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package – Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS (T

Rating

Drain–to–Source Voltage

N–Channel

P–Channel Gate–to–Source Voltage V Drain Current – Continuous N–Channel

– Pulsed N–Channel

Operating and Storage Temperature Range TJ and

Total Power Dissipation @ TA= 25°C

(Note 2) Thermal Resistance – Junction to Ambient

(Note 2) Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds.

1. Negative signs for P–Channel device omitted for clarity.

2. Mounted on 2 ″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10 sec. max.

= 25°C unless otherwise noted) (Note 1)

J

Symbol Value Unit

V

P–Channel

R

I

T

P

DSS

GS

I

D

DM

stg

D

θ

JA

T

L

20 20

±12 Vdc

5.2

3.4 48 17

–55 to

150

2.0 Watts

62.5 °C/W

260 °C

Vdc

A

°C

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2 AMPERES

20 VOLTS

R

DS(on)

R

DS(on)

G

D2C02 = Specific Device Code L = Location Code Y = Year WW = Work Week

Device Package Shipping

= 43 m (N–Channel)

= 120 m (P–Channel)

N–Channel

D

G

S

8

1

SO–8, Dual

CASE 751 STYLE 14

PIN ASSIGNMENT

N–Source

N–Gate

P–Source

P–Gate

ORDERING INFORMATION

1 2 3 4

Top View

8 7 6 5

P–Channel

D

MARKING DIAGRAM

D2C02 LYWW

N–Drain N–Drain

P–Drain P–Drain

S

 Semiconductor Components Industries, LLC, 2002

September, 2002 – Rev. 0

NTMD2C02R2 SO–8 2500/Tape & Reel

Preferred devices are recommended choices for future use and best overall value.

1 Publication Order Number:

NTMD2C02R2/D

NTMD2C02R2

)

(V

DD

Vdc, I

D

Adc

V

GS

Vdc

(V

DS

Vdc, I

D

Adc

V

GS

Vdc

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Note 3)

A

Characteristic Symbol Polarity Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

= 0 Vdc, ID = 250 µAdc)

(V

GS

Zero Gate Voltage Drain Current

(V

= 0 Vdc, VDS = 20 Vdc)

GS

= 0 Vdc, VDS = 12 Vdc)

(V

GS

Gate–Body Leakage Current

= ±12 Vdc, VDS = 0)

(V

GS

V

(BR)DSS

I

DSS

I

GSS

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

= VGS, ID = 250 µAdc)

(V

DS

Drain–to–Source On–Resistance

(V

= 4.5 Vdc, ID = 4.0 Adc)

GS

= 4.5 Vdc, ID = 2.4 Adc)

(V

GS

Drain–to–Source On–Resistance

(V

= 2.7 Vdc, ID = 2.0 Adc)

GS

= 2.7 Vdc, ID = 1.2 Adc)

(V

GS

Forward Transconductance

(V

= 2.5 Vdc, ID = 2.0 Adc)

DS

= 2.5 Vdc, ID = 1.0 Adc)

(V

DS

V

GS(th)

R

DS(on)

R

DS(on)

g

FS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

C

iss

C

oss

f = 1.0 MHz)

Transfer Capacitance

C

rss

SWITCHING CHARACTERISTICS (Note 5)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 16 Vdc, ID = 4.0 Adc,

16

V

GS

R

= 4.5 Vdc,

= 6.0 Ω)

G

4.0

(VDD = 10 Vdc, ID = 1.2 Adc,

= 2.7 Vdc,

= 2.7

V

R

= 6.0 Ω)

G

(VDS = 16 Vdc, ID = 6.0 Adc,

16

= 4.5 Vdc,

V

GS

R

= 6.0 Ω)

G

(V

= 10 Vdc, ID = 2.4 Adc,

DS

V

= 4.5 Vdc,

= 4.5

= 6.0 Ω)

R

G

,

6.0

,

t

d(on)

,

t

r

t

d(off)

t

f

t

d(on)

,

t

r

t

d(off)

t

f

3. Negative signs for P–Channel device omitted for clarity.

4. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

(N) (P)

20 20

– –

– – – 100

(N) (P)

0.6

–

0.07

–

0.1

3.0

– –

0.9

0.028–0.043

0.033–0.048

0.13

6.0

4.75

785

1100

540 210

215

75

100

11 15

35 40

45 35

60 35

12 10

50 35

45 33

80 29

– –

1.0

1.2

0.1

– –

750 450

325 180

175

18

–

65

–

75

–

110

–

20 20

90 65

75 60

130

55

Vdc

µAdc

nAdc

Vdc

Ohm

mhos

pF

ns

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2

NTMD2C02R2

)

V

GS

Vdc)

(

(I

F

I

S

ELECTRICAL CHARACTERISTICS – continued (T

= 25°C unless otherwise noted) (Note 6)

A

Characteristic Symbol Polarity Min Typ Max Unit

SWITCHING CHARACTERISTICS – continued (Note 8)

Total Gate Charge Q

Gate–Source Charge

Gate–Drain Charge

(VDS = 10 Vdc, ID = 4.0 Adc,

V

= 4.5 Vdc)

GS

(V

= 6.0 Vdc, ID = 2.0 Adc,

DS

V

= 4.5 Vdc

= 4.5

T

Q

1

Q

2

Q

3

SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 7)

Reverse Recovery Time

Reverse Recovery Stored

(IS = 4.0 Adc, VGS = 0 Vdc) (I

= 2.4 Adc, VGS = 0 Vdc)

S

I

= I

,

=

dI

/dt = 100 A/µs)

S

,

V

SD

t

rr

t

a

t

b

Q

RR

Charge

6. Negative signs for P–Channel device omitted for clarity.

7. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

8. Switching characteristics are independent of operating junction temperature.

(N) (P)

– –

12 10

1.5

4.0

5.0

3.0

0.83

0.88 30

37 15

16 15

21

0.02

0.025

20 18

1.1

1.0

nC

– –

Vdc

–

ns

– –

µC

–

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3

12

10

8

6

4

, DRAIN CURRENT (AMPS)

D

2

I

10 V

NTMD2C02R2

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel P–Channel

2.5 V

4.5 V

3.2 V

2.0 V

TJ = 25°C

1.8 V

VGS = 1.5 V

4

3

2

1

DRAIN CURRENT (AMPS)

D,

–I

VGS = –2.1 V

VGS = –10 V

= –4.5 V

V

GS

V

= –2.5 V

GS

TJ = 25°C

VGS = –1.9 V

VGS = –1.7 V

VGS = –1.5 V

0

12

10

8

6

4

, DRAIN CURRENT (AMPS)

2

D

I

0

V

, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On–Region Characteristics

VDS ≥ 10 V

100°C

TJ = –55°C

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

25°C

Figure 2. Transfer Characteristics

1.751.51.2510.750.50.250

0

–V

, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS

6

84210

Figure 1. On–Region Characteristics

5

VDS ≥ –10 V

4

3

2

TJ = 25°C

DRAIN CURRENT (AMPS)

1

D,

TJ = 100°C

–I

2.521.510.5

0

1

, GATE–TO–SOURCE VOLTAGE (VOLTS)

–V

GS

TJ = 55°C

1.5 2

2.5

3

Figure 2. Transfer Characteristics

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4

0

0.07

0.06

0.05

0.04

0.03

NTMD2C02R2

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel P–Channel

0.2

ID = 6.0 A T

= 25°C

J

0.15

TJ = 25°C

0.1

0.02

0.01

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0

DS(on)

R

0.05

0.04

0.03

0.02

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0.01

DS(on)

R

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. On–Resistance versus Drain Current

Figure 3. On–Resistance versus

Gate–To–Source Voltage

TJ = 25°C

VGS = 2.5 V

4.5 V

7531

ID, DRAIN CURRENT (AMPS)

and Gate Voltage

0.05

, DRAIN–TO–SOURCE RESISTANCE ()

DS(on)

R

0.12

0.1

0.08

0.06

, DRAIN–TO–SOURCE RESISTANCE ()

0.04

DS(on)

R

0

2

TJ = 25°C

1

1086420

11913

Figure 4. On–Resistance versus Drain Current

46

–V

GATE–TO–SOURCE VOLTAGE (VOLTS)

GS,

Figure 3. On–Resistance versus

Gate–To–Source Voltage

VGS = –2.7 V

VGS = –4.5 V

1.5 2 2.5 3.5 –ID, DRAIN CURRENT (AMPS)

and Gate Voltage

8

4.543

1.6

1.4

1.2

1

(NORMALIZED)

0.8

, DRAIN–TO–SOURCE RESISTANCE

0.6

DS(on)

R

ID = 6.0 A V

= 4.5 V

GS

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

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1.6

1.4

1.2

1

, DRAIN–TO–SOURCE

0.8

DS(on)

R

RESISTANCE (NORMALIZED)

1501251007550250–25–50

0.6 –50

5

ID = –2.4 A

V

= –4.5 V

GS

–25 0 25 75

T

JUNCTION TEMPERATURE (°C)

J,

Figure 5. On–Resistance Variation with

Temperature

15

12510050