ON Semiconductor NTLJF4156N Technical data

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NTLJF4156N

Power MOSFET and
Schottky Diode

30 V, 4.0 A, N−Channel, with 1.0 A
Schottky Barrier Diode, SC−88FL
2x2 mm, mCool] Package

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Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode

• Better Thermal Resistance than TSOP−6 Package

• R

Rated at Low V

DS(on)

Levels, VGS = 1.5 V

GS(on)

• Low VF Schottky

• This is a Pb−Free Device

Applications

• DC−DC Converters

• Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players

• Color Display and Camera Flash Regulators

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) (Note 2) I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size.

= 25°C unless otherwise noted)

J

DSS

GS

I

I

P

I

P

DM

T

D

D

D

D

STG

S

L

T

= 25°C

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 2.08

Steady

State

J

T

= 85°C 2.4

J

= 25°C 4.0

J

T

= 25°C

J

T

= 25°C

J

T

= 85°C 1.4

J

T

= 25°C

J

t

= 10 ms

p

30 V

±8.0 V

3.0

1.21

2.0

0.44

17 A

−55 to
150

2.4 A

260 °C

A

W

A

°C

MOSFET

(BR)DSS

30 V

MAX

R

DS(on)

70 mW @ 4.5 V

90 mW @ 2.5 V
125 mW @ 1.8 V
250 mW @ 1.5 V

ID MAX (Note 1)V

SCHOTTKY DIODE

VR MAX IF MAXVF TYP

30 V

G

N−CHANNEL MOSFET

0.48 V

D

S

A

K

SCHOTTKY DIODE

MARKING
DIAGRAM

1

DFN6

CASE 506AN

JL = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

1
2
3

PIN CONNECTIONS

K

6

5

D

4

N/C

A

1

2

D

3

(Top View)

4.0 A

1.0 A

JLMG

G

K

G

S

6
5
4

© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 0

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.

1 Publication Order Number:

NTLJF4156N/D

NTLJF4156N

SCHOTTKY DIODE MAXIMUM RATINGS (T

Parameter

Peak Repetitive Reverse Voltage V
DC Blocking Voltage V
Average Rectified Forward Current I

= 25°C unless otherwise noted)

J

Symbol Value Unit

RRM

R

F

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient − Pulsed (50/50 Duty Cycle) Minimum Pad (Note 4)

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size.

MOSFET ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

DS

V

= 0 V, I

GS

I

= 250 mA, Ref to 25°C

D

= 24 V, V

V

DS

GS

= 0 V, V

D

= 0 V

GS

= 250 mA

= ±8.0 V 100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Gate Threshold

Temperature Coefficient
Drain−to−Source On−Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

V

GS

V
V
V
V

GS
GS
GS
GS

DS

= VDS, I

= 4.5, I
= 2.5, I
= 1.8, I
= 1.5, I

= 10 V, I

= 250 mA

D

= 2.0 A 47 70 mW

D

= 2.0 A 56 90

D

= 1.8 A 88 125

D

= 1.5 A 133 250

D

= 2.0 A 4.5 S

D

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Gate Resistance R

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS

GD

G

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 4.5 V, V

I

= 2.0 A

D

= 15 V

DS

= 15 V,

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

R

q

JA

R

q

JA

R

q

JA

R

q

JA

TJ = 25°C 1.0 mA

TJ = 125°C 10

0.4 0.7 1.0 V

30 V
30 V

1.0 A

103

60

285

°C/W

115

30 V

18.1 mV/°C

2.8 mV/°C

427

51
32

5.4 6.5

0.5

0.8

1.24

3.7

pF

nC

W

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NTLJF4156N

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter UnitMaxTypMinTest ConditionsSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

I

D

= 4.5 V, V

= 2.0 A, R

= 15 V,

DD

= 2.0 W

G

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Time Q

V

SD

RR

a
b

RR

VGS = 0 V, IS = 2.0 A

V

= 0 V, d

GS

I

ISD/dt

S

= 2.0 A

TJ = 25°C 0.78 1.2

TJ = 125°C 0.62

= 100 A/ms,

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter Symbol Test Conditions Min Typ Max Unit

I

Maximum Instantaneous
Forward Voltage

Maximum Instantaneous
Reverse Current

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

= 0.1 A 0.34 0.39

F

I

= 1.0 A 0.47 0.53

F

V

= 30 V 0.006 0.093

R

V

= 20 V 0.003 0.036

R

V

= 10 A 0.002 0.018

R

= 85°C unless otherwise noted)

J

Parameter Symbol Test Conditions Min Typ Max Unit

I

Maximum Instantaneous
Forward Voltage

Maximum Instantaneous
Reverse Current

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Instantaneous
Forward Voltage

Maximum Instantaneous
Reverse Current

Symbol Test Conditions Min Typ Max Unit

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

= 0.1 A 0.22 0.35

F

I

= 1.0 A 0.40 0.52

F

V

= 30 V 2.2 4.8

R

V

= 20 V 1.3 2.5

R

V

= 10 V 0.6 0.8

R

= 125°C unless otherwise noted)

J

I

= 0.1 A 0.2 0.32

F

I

= 1.0 A 0.4 0.53

F

V

= 30 V 6.7 42

R

V

= 20 V 2.5 10.6

R

V

= 10 V 1.6 3.4

R

= 25°C unless otherwise noted)

J

Parameter Symbol Test Conditions Min Typ Max Unit

Capacitance C V

7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm

= 5.0 V, f = 1.0 MHz 38 pF

R

2

, 2 oz cu.

9. Pulse Test: pulse width v 300 ms, duty cycle v2%.

10.Switching characteristics are independent of operating junction temperatures.

4.8

9.2

14.2

1.7

10.5

7.6

2.9

5.0 nC

ns

V

ns

V

mA

V

mA

V

mA

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