ON Semiconductor NTHD5903T1 Technical data

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NTHD5903T1

Power MOSFET Dual P-Channel ChipFET

2.1 Amps, 20 Volts

Features

• Low R

• Logic Level Gate Drive

• Miniature ChipFET Surface Mount Package Saves Board Space

Applications

• Power Management in Portable and Battery–Powered Products; i.e.,

Cellular and Cordless T elephones and PCMCIA Cards

for Higher Efficiency

DS(on)

http://onsemi.com

DUAL P–CHANNEL

2.1 AMPS, 20 VOLTS R

DS(on)

= 155 m

MAXIMUM RATINGS (T

Rating

Drain–Source Voltage V Gate–Source Voltage V Continuous Drain Current

(T

= 150°C) (Note 1)

J

= 25°C

T

A

T

= 85°C

A

Pulsed Drain Current I Continuous Source Current

(Diode Conduction) (Note 1)

Maximum Power Dissipation

(Note 1)

= 25°C

T

A

T

= 85°C

A

Operating Junction and Storage

Temperature Range

1. Surface Mounted on 1″ x 1″ FR4 Board.

= 25°C unless otherwise noted)

A

Symbol 5 secs

TJ, T

P

DS GS

I

D

DM

I

S

1

Steady

State

–20 V

12 V

2.9 2.1

S

D

–1.8 –0.9 A

2.1

1.1

stg

2.1 1.5

10 A

1.1

0.6

–55 to +150 °C

Unit

A

W

G

1

D

G

2

1

P–Channel MOSFETP–Channel MOSFET

ChipFET

CASE 1206A

STYLE 2

PIN CONNECTIONS

8

D

1

7

D

1

6

D

2

D

2

1

S

1

2

3

45

2

G

1

S

3

2

4

G

2

S

2

MARKING DIAGRAM

A7

D

2

8 7 6 5

 Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev . 2

A7 = Specific Device Code

ORDERING INFORMATION

Device Package Shipping

NTHD5903T1 ChipFET 3000/Tape & Reel

1 Publication Order Number:

NTHD5903T1/D

THERMAL CHARACTERISTICS

()

I

A

R

G



Characteristic Symbol Typ Max Unit

Maximum Junction–to–Ambient (Note 2)

t  5 sec Steady State

Maximum Junction–to–Foot (Drain)

Steady State

ELECTRICAL CHARACTERISTICS (T

Characteristic

Static

Gate Threshold Voltage Gate–Body Leakage I Zero Gate Voltage Drain Current I

On–State Drain Current (Note 3) I Drain–Source On–State Resistance (Note 3) r

Forward Transconductance (Note 3) g Diode Forward Voltage (Note 3) V

Dynamic (Note 4)

Total Gate Charge Gate–Source Charge Q Gate–Drain Charge Q Turn–On Delay Time t Rise Time t Turn–Off Delay Time t Fall Time t Source–Drain Reverse Recovery Time t

2. Surface Mounted on 1″ x 1″ FR4 Board.

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.

4. Guaranteed by design, not subject to production testing.

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

V

GS(th)

GSS DSS

D(on)

DS(on)

fs

SD

Q

g gs gd

d(on)

r

d(off)

f

rr

NTHD5903T1

R

thJA

R

thJF

VDS = VGS, ID = –250 A –0.6 – – V VDS = 0 V, VGS = 12 V – – 100 nA

VDS = –16 V, VGS = 0 V – – –1.0

VDS = –16 V, VGS = 0 V,

T

= 85°C

J

VDS  –5.0 V, VGS = –4.5 V –10 – – A

VGS = –4.5 V, ID = –2.1 A – 0.130 0.155 VGS = –3.6 V, ID = –2.0 A – 0.150 0.180 VGS = –2.5 V, ID = –1.7 A – 0.215 0.260

VDS = –10 V, ID = –2.1 A – 5.0 – S

IS = –0.9 A, VGS = 0 V – –0.8 –1.2 V

VDS = –10 V, VGS = –4.5 V,

I

= –2.1 A

= –2.1

D

VDD = –10 V, RL = 10 

ID  –1.0 A, V

R

= 6 

6

G

GEN

IF = –0.9 A, di/dt = 100 A/s

50 90

60

110

30 40 °C/W

– – –5.0

– 3.0 6.0 – 0.9 – – 0.6 – – 13 20

= –4.5 V,

– 35 55 – 25 40 – 25 40 – 40 80

°C/W

A



nC

ns

http://onsemi.com

2

NTHD5903T1

TYPICAL ELECTRICAL CHARACTERISTICS

10

VGS = 4 V – 10 V

8

TJ = 25°C

6

3.6 V

3.4 V 3 V

10

125°C

8

25°C

6

2.8 V

4

DRAIN CURRENT (AMPS)

2

D,

I

0

1

–V

, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On–Region Characteristics

4

3

VGS = 1.4 V

4

ID = –2.1 A T

= 25°C

J

5

2.6 V

2.4 V

2.2 V

1.8 V

632

4

DRAIN CURRENT (AMPS)

2

D,

I

0

1

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.4

0.35

0.3 VGS = –2.5 V

0.25

2

0.2

1

DRAIN–TO–SOURCE RESISTANCE ()

0

05

DS(on),

R

13

24

–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.15

0.1

DRAIN–TO–SOURCE RESISTANCE ()

0.05

DS(on),

191085

R

4

–ID, DRAIN CURRENT (AMPS)

TC = –55°C

324

5

TJ = 25°C

VGS = –3.6 V

VGS = –4.5 V

7623

Figure 3. On–Resistance vs. Gate–to–Source

Voltage

1.6 ID = –2.1 A V

= –4.5 V

1.4

GS

1.2

1

DRAIN–TO–SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

–50 0–25 25

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

1.0E–6

1.0E–7

1.0E–8

, LEAKAGE (A)

1.0E–9

DSS

I

1.0E–10

1.0E–11

http://onsemi.com

3

Figure 4. On–Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

TJ = 25°C

04 8

12

–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–to–Source Leakage Current

vs. Voltage

2016