NTGS5120P, NVGS5120P
MOSFET – Power, Single,
P-Channel, TSOP-6
-60 V, -2.9 A
Features
• 60 V BVds, Low R
in TSOP−6 Package
DS(on)
• 4.5 V Gate Rating
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Applications
• High Side Load Switch
• Power Switch for Printers, Communication Equipment
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
= 25°C unless otherwise stated)
J
Symbol Value Unit
D
D
L
−60 V
$20 V
−2.5
1.1
−1.8
0.6 W
−20 A
−55 to
150
260 °C
DSS
GS
T
I
P
I
P
I
DM
STG
T
D
D
Steady
State
t v 5 s TA = 25°C −2.9
Steady
State
t v 5 s 1.4
Steady
State
tp = 10 ms
TA = 25°C
TA = 85°C −2.0
TA = 25°C
TA = 25°C
TA = 85°C −1.3
TA = 25°C
A
W
A
°C
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V
(BR)DSS
−60 V
R
MAX ID MAX
DS(ON)
111 m W @ −10 V
142 mW @ −4.5 V
P−Channel
1256
3
4
−2.9 A
MARKING
DIAGRAM
TSOP−6
CASE 318G
1
XX = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
STYLE 1
XX MG
G
1
PIN ASSIGNMENT
DrainDrain
Source
56
4
321
Drain
GateDrain
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2019 − Rev. 1
1 Publication Order Number:
NTGS5120P/D
NTGS5120P, NVGS5120P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
R
q
JA
R
q
JA
R
q
JA
102
77.6
200
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = −250 mA
VGS = 0 V,
V
= −48 V
DS
TJ = 25°C −1.0 mA
TJ = 125°C −5.0
VDS = 0 V, VGS = ±12 V $100 nA
−60 V
VDS = 0 V, VGS = ±20 V $200 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance R
V
GS(TH)
DS(on)
VGS = VDS, ID = −250 mA
VGS = −10 V, ID = −2.9 A 72 111 mW
−1.0 −3.0 V
VGS = −4.5 V, ID = −2.5 A 88 142
Forward Transconductance g
FS
VDS = −5.0 V, ID = −6.0 A 10.1 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
VGS = 0 V, f = 1 MHz, VDS = −30 V
VGS = −10 V, VDS = −30 V;
ID = −2.9 A
942
72
48
18.1
1.2
2.7
3.6
pF
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = −10 V, VDS = −30 V,
= −1.0 A, RG = 6.0 W
I
D
8.7
4.9
38
12.8
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Reverse Recovery Charge Q
V
SD
RR
a
RR
VGS = 0 V,
I
= −0.9 A
S
TJ = 25°C −0.75 −1.0 V
VGS = 0 V, dIS/dt = 100 A/ms,
I
= −0.9 A
S
18.3 ns
15.5 ns
15.1 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTGS5120P, NVGS5120P
TYPICAL CHARACTERISTICS
3.5
3.0
2.5
2.0
1.5
1.0
, DRAIN CURRENT (A)
D
−I
0.5
0
−3.0 V
−10 V
−3.2 V
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.20
0.18
0.16
0.14
0.12
−2.8 V
−4.5 V
TJ = 25°C
−2.6 V
−2.4 V
VGS = −2.2 V
ID = −2.9 A
= 25°C
T
J
5.0
4.0
3.0
2.0
, DRAIN CURRENT (A)
D
−I
1.0
3.02.52.01.51.00.50
0
0.10
0.09
0.08
0.07
VDS ≥ −10 V
TJ = 25°C
TJ = −55°C TJ = 25°C
TJ = 125°C
1.4 2.4 3.4
VGS = −4.5 V
VGS = −10 V
3.92.91.90.90.4
0.10
0.08
0.06
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
DS(on)
R
−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
1.8
1.6
1.4
1.2
1.0
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
0.8
DS(on)
R
0.6
ID = −2.9 A
= −4.5 V
V
GS
Figure 5. On−Resistance Variation with
0.06
0.05
, DRAIN−TO−SOURCE RESISTANCE (W)
6.0 7.0 8.0 9.0 6.0
105.04.03.02.0
0.04
DS(on)
R
Gate Voltage
10,000
VGS = 0 V
1000
, LEAKAGE (nA)
100
DSS
−I
1251007550250−25−50
150
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
TJ = 150°C
TJ = 125°C
5040302010
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
7.05.04.03.02.01.0
60
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3
NTGS5120P, NVGS5120P
TYPICAL CHARACTERISTICS
1300
1200
1100
1000
900
800
700
600
500
400
C
300
C, CAPACITANCE (pF)
200
100
C
0
1000
100
10
VGS = 0 V
= 25°C
T
C
iss
J
9.0
8.0
Qt
7.0
6.0
5.0
rss
oss
4.0
3.0
Q
2.0
, GATE−TO−SOURCE VOLTAGE (V)
1.0
GS
0
−V
3020100
40
Q
gs
gd
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
1.4
VDD = −30 V
= −1.0 A
I
D
V
= −10 V
GS
t
d(off)
t
f
1.2
1.0
0.8
VGS = 0 V
= 25°C
T
J
TJ = 25°C
= −2.9 A
I
D
Vds = −30 V
161410 12
188.06.02.0 4.00
t, TIME (ns)
10
1.0
Figure 9. Resistive Switching Time Variation
t
d(on)
RG, GATE RESISTANCE (W)
vs. Gate Resistance
100
10
1
0 V ≤ VGS ≤ 20 V
SINGLE PULSE
TC = 25°C
0.1
, DRAIN CURRENT (AMPS)
D
I
0.01
0.1 1 100
V
DS
Figure 11. Maximum Rated Forward Biased
0.6
t
r
0.4
, SOURCE CURRENT (A)
S
−I
0.2
0
100101.0
−V
SD
Figure 10. Diode Forward Voltage vs. Current
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Safe Operating Area
0.70.60.50.40.30.20.10
, SOURCE−TO−DRAIN VOLTAGE (V)
10 ms
100 ms
1 ms
10 ms
dc
0.90.8
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4
1000
, TRANSIENT THERMAL RESPONSE (°C/W)
thja(t)
R
100
10
0.1
0.01
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001 0.0001 0.0010.000001
NTGS5120P, NVGS5120P
TYPICAL CHARACTERISTICS
0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 12. Thermal Response
Table 1. ORDERING INFORMATION
Marking
Part Number
NTGS5120PT1G P6 TSOP−6
NVGS5120PT1G VP6 TSOP−6
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
(XX)
Package Shipping
3000 / Tape & Reel
(Pb−Free)
3000 / Tape & Reel
(Pb−Free)
†
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
D
456
E1
NOTE 5
0.05
A1
23
1
e
E
b
A
DETAIL Z
c
CASE 318G−02
H
L
M
DETAIL Z
TSOP−6
ISSUE V
L2
GAUGE
PLANE
SEATING
C
PLANE
DATE 12 JUN 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
DIMAMIN NOM MAX
A1 0.01 0.06 0.10
b 0.25 0.38 0.50
c 0.10 0.18 0.26
D 2.90 3.00 3.10
E 2.50 2.75 3.00
E1
e 0.85 0.95 1.05
L 0.20 0.40 0.60
L2
M
MILLIMETERS
0.90 1.00 1.10
1.30 1.50 1.70
0.25 BSC
0° 10°
−
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 7:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. N/C
5. COLLECTOR
6. EMITTER
STYLE 13:
PIN 1. GATE 1
2. SOURCE 2
3. GATE 2
4. DRAIN 2
5. SOURCE 1
6. DRAIN 1
STYLE 2:
PIN 1. EMITTER 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 2
6. COLLECTOR 2
STYLE 8:
PIN 1. Vbus
2. D(in)
3. D(in)+
4. D(out)+
5. D(out)
6. GND
STYLE 14:
PIN 1. ANODE
2. SOURCE
3. GATE
4. CATHODE/DRAIN
5. CATHODE/DRAIN
6. CATHODE/DRAIN
STYLE 3:
PIN 1. ENABLE
2. N/C
3. R BOOST
4. Vz
5. V in
6. V out
STYLE 9:
PIN 1. LOW VOLTAGE GATE
2. DRAIN
3. SOURCE
4. DRAIN
5. DRAIN
6. HIGH VOLTAGE GATE
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
3.20
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14888C
TSOP−6
6X
0.95
0.95
PITCH
STYLE 4:
PIN 1. N/C
2. V in
3. NOT USED
4. GROUND
5. ENABLE
6. LOAD
STYLE 10:
PIN 1. D(OUT)+
2. GND
3. D(OUT)−
4. D(IN)−
5. VBUS
6. D(IN)+
STYLE 16:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 5:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
STYLE 17:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 12:
PIN 1. I/O
2. GROUND
3. I/O
4. I/O
5. VCC
6. I/O
GENERIC
MARKING DIAGRAM*
XXXAYWG
G
1
XXX = Specific Device Code
A =Assembly Location
Y = Year
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
W = Work Week
G = Pb−Free Package
*This information is generic. Please refer to device data sheet
for actual part marking. Pb−Free indicator, “G” or microdot “
G”, may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
XXX MG
G
1
STANDARDIC
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