ON Semiconductor NTGS5120P, NVGS5120P User Manual
NTGS5120P, NVGS5120P
MOSFET – Power, Single,
P-Channel, TSOP-6
-60 V, -2.9 A
Features
• 60 V BVds, Low R
in TSOP−6 Package
DS(on)
• 4.5 V Gate Rating
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Applications
• High Side Load Switch
• Power Switch for Printers, Communication Equipment
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
= 25°C unless otherwise stated)
J
Symbol Value Unit
D
D
L
−60 V
$20 V
−2.5
1.1
−1.8
0.6 W
−20 A
−55 to
150
260 °C
DSS
GS
T
I
P
I
P
I
DM
STG
T
D
D
Steady
State
t v 5 s TA = 25°C −2.9
Steady
State
t v 5 s 1.4
Steady
State
tp = 10 ms
TA = 25°C
TA = 85°C −2.0
TA = 25°C
TA = 25°C
TA = 85°C −1.3
TA = 25°C
A
W
A
°C
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V
(BR)DSS
−60 V
R
MAX ID MAX
DS(ON)
111 m W @ −10 V
142 mW @ −4.5 V
P−Channel
1256
3
4
−2.9 A
MARKING
DIAGRAM
TSOP−6
CASE 318G
1
XX = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
STYLE 1
XX MG
G
1
PIN ASSIGNMENT
DrainDrain
Source
56
4
321
Drain
GateDrain
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2019 − Rev. 1
1 Publication Order Number:
NTGS5120P/D
NTGS5120P, NVGS5120P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
R
q
JA
R
q
JA
R
q
JA
102
77.6
200
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = −250 mA
VGS = 0 V,
V
= −48 V
DS
TJ = 25°C −1.0 mA
TJ = 125°C −5.0
VDS = 0 V, VGS = ±12 V $100 nA
−60 V
VDS = 0 V, VGS = ±20 V $200 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance R
V
GS(TH)
DS(on)
VGS = VDS, ID = −250 mA
VGS = −10 V, ID = −2.9 A 72 111 mW
−1.0 −3.0 V
VGS = −4.5 V, ID = −2.5 A 88 142
Forward Transconductance g
FS
VDS = −5.0 V, ID = −6.0 A 10.1 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
VGS = 0 V, f = 1 MHz, VDS = −30 V
VGS = −10 V, VDS = −30 V;
ID = −2.9 A
942
72
48
18.1
1.2
2.7
3.6
pF
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = −10 V, VDS = −30 V,
= −1.0 A, RG = 6.0 W
I
D
8.7
4.9
38
12.8
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Reverse Recovery Charge Q
V
SD
RR
a
RR
VGS = 0 V,
I
= −0.9 A
S
TJ = 25°C −0.75 −1.0 V
VGS = 0 V, dIS/dt = 100 A/ms,
I
= −0.9 A
S
18.3 ns
15.5 ns
15.1 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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NTGS5120P, NVGS5120P
TYPICAL CHARACTERISTICS
3.5
3.0
2.5
2.0
1.5
1.0
, DRAIN CURRENT (A)
D
−I
0.5
0
−3.0 V
−10 V
−3.2 V
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.20
0.18
0.16
0.14
0.12
−2.8 V
−4.5 V
TJ = 25°C
−2.6 V
−2.4 V
VGS = −2.2 V
ID = −2.9 A
= 25°C
T
J
5.0
4.0
3.0
2.0
, DRAIN CURRENT (A)
D
−I
1.0
3.02.52.01.51.00.50
0
0.10
0.09
0.08
0.07
VDS ≥ −10 V
TJ = 25°C
TJ = −55°C TJ = 25°C
TJ = 125°C
1.4 2.4 3.4
VGS = −4.5 V
VGS = −10 V
3.92.91.90.90.4
0.10
0.08
0.06
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
DS(on)
R
−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
1.8
1.6
1.4
1.2
1.0
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
0.8
DS(on)
R
0.6
ID = −2.9 A
= −4.5 V
V
GS
Figure 5. On−Resistance Variation with
0.06
0.05
, DRAIN−TO−SOURCE RESISTANCE (W)
6.0 7.0 8.0 9.0 6.0
105.04.03.02.0
0.04
DS(on)
R
Gate Voltage
10,000
VGS = 0 V
1000
, LEAKAGE (nA)
100
DSS
−I
1251007550250−25−50
150
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
TJ = 150°C
TJ = 125°C
5040302010
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
7.05.04.03.02.01.0
60
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