ON Semiconductor NTGS4111P Technical data

NTGS4111P

y

y

s

Power MOSFET

−30 V, −4.7 A, Single P−Channel, TSOP−6

Features

• Leading −30 V Trench Process for Low R

• Low Profile Package Suitable for Portable Applications

• Surface Mount TSOP−6 Package Saves Board Space

• Improved Efficiency for Battery Applications

• Pb−Free Package is Available

Applications

• Battery Management and Switching

• Load Switching

• Battery Protection

DS(on)

V

(BR)DSS

−30 V

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R

TYP

DS(on)

38 mW @ −10 V

68 mW @ −4.5 V

P−Channel

1256

ID MAX

−4.7 A

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

D

D

L

−30 V
±20 V

−3.7

1.25

−2.6

0.63 W

−15 A

−55 to
150

−1.7 A
260 °C

A

W

A

°C

DSS

GS

Stead

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 2.0

Stead

State

T

= 25°C

A

T

= 85°C −2.7

A

= 25°C −4.7

A

T

= 25°C P

A

T

= 25°C

A

T

= 85°C −1.9

A

T

= 25°C P

A

tp = 10 ms

T

I

I

I

DM

STG

T

D

D

S

THERMAL RESISTANCE RATINGS

Rating Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t ≤ 5 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).

R

q

JA

R

q

R

q

62.5

JA
JA

100

200

°C/W

3

4

MARKING DIAGRAM &

PIN ASSIGNMENT

Drain6Drain

1

TSOP−6

CASE 318G

STYLE 1

TG = Specific Device Code

M

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

= Date Code*

1

Drain2Drain

5

TG M G

G

Source
4

3
Gate

ORDERING INFORMATION

Device Package Shipping

NTGS4111PT1 TSOP−6 3000 / Tape & Reel
NTGS4111PT1G TSOP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000 / Tape& Reel

†

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 2

1 Publication Order Number:

NTGS4111P/D

NTGS4111P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

V

V

DS

V

GS

GS

DS

= 0 V, I

= 0 V,

= −24 V

= 0 V, V

D

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V
Negative Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

GS

V

GS

V

GS

V

DS

= VDS, I

= −10 V, I

= −4.5 V, I

= −10 V, I

D

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

ISS
OSS
RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= −10 V, V

GS

I

= −3.7 A

D

= −15 V

SWITCHING CHARACTERISTICS, VGS = −10 V (Note 4)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(ON)

r

d(OFF)

f

V

GS

I

= −1.0 A, R

D

= −10 V, V

SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 4)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(ON)

r

d(OFF)

f

V

GS

I

D

= −4.5 V, V
= −1.0 A, R

DRAIN − SOURCE DIODE CHARACTERISTICS

Characteristic Symbol Test Condition Min Typ Max Unit

Forward Diode Voltage V

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

RR

DS

a
b

RR

V

= 0 V,

GS

I

= −1.0 A

S

VGS = 0 V

dIS/dt = 100 A/ms, IS = −1.0 A

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

= −250 mA

−30 V

−17 mV/°C

TJ = 25°C

TJ = 125°C

= ±20 V ±100 nA

GS

= −250 mA

−1.0 −3.0 V

−1.0

−100

5.0 mV/°C

= −3.7 A 38 60

D

= −2.7 A 68 110

D

= −3.7 A 6.0 S

D

750
140
130

15.25 32

= −15 V,

DD

0.8

2.6

3.4

9.0 17

= −15 V,

DD

= 6.0 W

G

9.0 18
38 85
22 45

11 20

= −15 V,

DD

= 6.0 W

G

15 28
28 56
22 50

TJ = 25°C

TJ = 125°C

−0.76 −1.2

−0.60
24 60

9.0
15
12 nC

mA

mW

pF

nC

ns

ns

V

ns

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