ON Semiconductor NTF3055-160 Technical data

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NTF3055-160

Preferred Device

Power MOSFET

2.0 Amps, 60 Volts

N–Channel SOT–223

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

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Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage

– Continuous
– Non–repetitive (tp ≤ 10 ms)

Drain Current

– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp ≤ 10 µs)

Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)

Thermal Resistance

– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu. Area 1.127 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in2).

= 25°C unless otherwise noted)

C

Rating

Symbol Value Unit

stg

60 Vdc
60 Vdc

± 20
± 30

2.0

1.2

6.0

2.1

1.3

0.014

–55 to

175

65 mJ

72.3
114

260 °C

Vdc
Vpk

Adc

Apk

W
W

W/°C

°C

°C/W

DSS

DGR

V

GS

I
I

I

DM
P

E

AS

R

θJA

R

θJA
T

D
D

D

L

2.0 AMPERES
60 VOLTS

R

DS(on)

G

4

1

2

3

5160 = Device Code
L = Location Code
WW = Work Week

PIN ASSIGNMENT

ORDERING INFORMATION

= 160 m

N–Channel

D

S

SOT–223

CASE 318E

STYLE 3

4

Drain

Gate Drain Source

321

MARKING
DIAGRAM

5160
LWW

 Semiconductor Components Industries, LLC, 2001

July, 2001 – Rev. 0

Device Package Shipping

NTF3055–160T1 SOT–223 1000 Tape & Reel
NTF3055–160T3 SOT–223 4000 Tape & Reel
NTF3055–160T3LF SOT–223 4000 Tape & Reel

1

Publication Order Number:

NTF3055–160/D

NTF3055–160

)

f

MHz)

R

G

9.1 Ω) (Note 3.)
)

V

GS

Vdc) (Note 3.)

(I

S

Adc, V

GS

Vdc

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 3.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 3.)

(VGS = 10 Vdc, ID = 1.0 Adc)

Static Drain–to–Source On–Resistance (Note 3.)

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150°C)

Forward Transconductance (Note 3.) (VDS = 8.0 Vdc, ID = 1.5 Adc)

(Note 3.)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 V,

f = 1.0 MHz

= 1.0

SWITCHING CHARACTERISTICS (Note 4.)

Turn–On Delay Time
Rise Time

Turn–Off Delay Time
Fall Time
Gate Charge

(VDD = 30 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω) (Note 3.)

(VDS = 48 Vdc, ID = 2.0 Adc,

V

= 10 Vdc) (Note 3.

= 10

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 2.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.

4. Switching characteristics are independent of operating junction temperatures.

(IS = 2.0 Adc, VGS = 0 Vdc,

TJ = 150°C) (Note 3.)

(IS = 2.0 Adc, VGS = 0 Vdc,

2.0

dIS/dt = 100 A/µs) (Note 3.)

0

,

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

60

–

–
–

– – ± 100 nAdc

2.0
–

– 142 160

– 0.142

– 1.8 – Mhos

– 200 280
– 68 100
– 26 40

– 9.2 20
– 9.2 20
– 16 40
– 9.2 20

T
1
2

– 6.9 14
– 1.4 –
– 3.0 –

–
–

– 28.9 –
– 19.1 –
– 9.8 –
– 0.030 – µC

72
72

–
–

3.1

6.6

0.270

0.86

0.70

–
–

1.0
10

4.0

–

0.384
–

1.0
–

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

Vdc

pF

ns

nC

Vdc

ns

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2

NTF3055–160

3.6

3.2

2.8

2.4
2

1.6

1.2

0.8

DRAIN CURRENT (AMPS)

D,

I

0.4
0

0

0.4

V

DS,

VGS = 8 V

VGS = 10 V

DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.28
VGS = 10 V

0.24

0.2

0.16

2.8

2.4
2

1.6

1.2

0.8

0.4
0

0.2

VDS ≥ 10 V

TJ = 25°C

TJ = 100°C

TJ = –55°C

V

GATE–TO–SOURCE VOLTAGE (VOLTS)

GS,

VGS = 15 V

TJ = 25°C

VGS = 6 V

VGS = 7 V

1.2 2 3 6.23.8 5.43.4 4.2 4.6 5 5.8

TJ = 100°C

TJ = 25°C

VGS = 5.5 V

VGS = 5 V

VGS = 4.5 V

2.4

DRAIN CURRENT (AMPS)

D,

I

2.81.60.8

0.28

0.24

0.16

0.12

0.08

0.04

DRAIN–TO–SOURCE RESISTANCE (Ω)

0

DS(on),

R

0

0.5 2 3.5

1

ID, DRAIN CURRENT (AMPS)

TJ = –55°C

Figure 3. On–Resistance versus

Gate–to–Source Voltage

V

GATE–TO–SOURCE VOLTAGE (VOLTS)

GS,

2

ID = 1 A
VGS = 10 V

1.8

1.6

1.4

1.2

1

0.8

0.6
–50 50250–25 75 125100

DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

0.12

0.08

0.04

DRAIN–TO–SOURCE RESISTANCE (Ω)

2.51.5

3

4

0

0 0.5 2 3.52.51.5134

DS(on),

R

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

TJ = 125°C

, LEAKAGE (nA)

150

175

10

DSS

I

1

04060302010 50

V

DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS,

TJ = 100°C

Figure 6. Drain–to–Source Leakage Current

versus V oltage

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3

NTF3055–160

560

VDS = 0 V

480

C

iss

400

320

C

rss

240

160

C, CAPACITANCE (pF)

80

0

10 10 155020525

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE

V

GS

VGS = 0 V

V

DS

(VOLTS)

TJ = 25°C

C

iss

C

oss

C

rss

12

10

8

Q

1

6

4

2

, GATE–TO–SOURCE VOLTAGE (VOLTS)

0

GS

V

057

Q

2

31

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate–to–Source and

Drain–to–Source Voltage versus Total Charge

100

10

t, TIME (ns)

VDS = 30 V
ID = 2 A
VGS = 10 V

t

d(off)

t

d(on)

t

r

t

f

1.6

1.2

0.8

2

VGS = 0 V
TJ = 25°C

Q

T

V

GS

ID = 2 A
TJ = 25°C

428

6

0.4

, SOURCE CURRENT (AMPS)

S

I

1

1 10 100 0.6 0.680.64 0.8

RG, GATE RESISTANCE (Ω)

Figure 9. Resistive Switching Time Variation

0

VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

0.72 0.76

Figure 10. Diode Forward Voltage versus Current

versus Gate Resistance

100

VGS = 20 V
SINGLE PULSE
TC = 25°C

10

1

dc

0.1

0.01

, DRAIN CURRENT (AMPS)

D

I

0.001

0.1 10 1001 25 125 15010075 17550
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

10 ms

1 ms

R
THERMAL LIMIT
PACKAGE LIMIT

DS(on)

LIMIT

100 µs

10 µs

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

70

60

50

40

30

20

AVALANCHE ENERGY (mJ)

10

, SINGLE PULSE DRAIN–TO–SOURCE

AS

0

E

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.84

ID = 6 A

0.88

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4

100

10

D = 0.5

0.2

0.1

0.05

NTF3055–160

P

(pk)

1

0.01

RESISTANCE (NORMALIZED)

r(t), EFFECTIVE TRANSIENT THERMAL

0.1

SINGLE PULSE

MIN PAD 1 OZ
(Cu Area = 0.272 sq in)

0.010.00010.00001
t, TIME (s)

Figure 13. Thermal Response

t

1

t

2

DUTY CYCLE, D = t1/t

1001010.10.001 1000

2

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5

0.08 (0003)

S

L

H

A

F

4

123

G

NTF3055–160

PACKAGE DIMENSIONS

SOT–223 (TO–261)

CASE 318E–04

ISSUE K

B

D

C

M

K

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100

J

J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05

M 0 10 0 10



S 0.264 0.287 6.70 7.30

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERS

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Notes

NTF3055–160

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NTF3055–160

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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