ON Semiconductor NTF2955 Technical data

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NTF2955

Power MOSFET

−60 V, −2.6 A, Single P−Channel SOT−223

Features

• TMOS7 Design for low R

• Withstands High Energy in Avalanche and Commutation Modes

Applications

• Power Supplies

• PWM Motor Control

• Converters

• Power Management

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1) State

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2) State

Power Dissipation
(Note 2)

Pulsed Drain Current tp = 10 s I
Operating Junction and Storage Temperature TJ,

Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, R

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

THERMAL RESISTANCE RATINGS

Junction−to−Tab (Drain) − Steady State (Note 2) R
Junction−to−Ambient − Steady State (Note 1) R
Junction−to−Ambient − Steady State (Note 2) R

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in

= 25 )

G

Parameter Symbol Max Unit

2

DS(on)

= 25°C unless otherwise noted)

J

Steady

Steady
State

Steady

[1 oz] including traces)

TA = 25°C
TA = 85°C −2.0

TA = 25°C P

TA = 25°C
TA = 85°C −1.3
TA = 25°C P

2

)

Symbol Value Unit

D

D

L

JC
JA
JA

−60 V
±20 V

−2.6

2.3

−1.7

1.0 W

−10.4 A

−55 to
175

260 °C

14
65

150

DSS

GS

I

D

I

D

DM

T

STG

EAS 225 mJ

T







A

W

A

°C

°C/W

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R

TYP

(BR)DSS

−60 V 145 m @ −10 V

DS(on)

P−Channel

D

G

S

ID MAXV

−2.6 A

MARKING

4

1

2

3

2955 = Device Code
L = Location Code
WW = Work Week

SOT−223

CASE 318E

STYLE 3

DIAGRAM

2955
LWW

PIN ASSIGNMENT

4

Drain

Gate Drain Source

321

ORDERING INFORMATION

Device Package Shipping

NTF2955T1 SOT−223 1000/Tape & Reel
NTF2955T3 SOT−223 4000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

†

 Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 1

1 Publication Order Number:

NTF2955/D

NTF2955

()

R

L

25 Ω

V

GS

= 0 V, dIS/dt = 100 A/s

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

V

V

DS

V

GS

GS

DS

= 0 V,

= −60 V

= 0 V, I

= 0 V, V

= −250 A −60 V

D

T

T

= ±20 V ±100 nA

GS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VDS, ID = −1.0 mA −2.0 −4.0 V

GS

V

= −10 V, I

GS

V

= −10 V, I

GS

VGS = −10 V, I

V

= −15 V, I

GS

= −0.75 A 145 170

D

= −1.5 A 150 180

D

= −2.4 A 154 185

D

= −0.75 A 1.77 S

D

CHARGES AND CAPACITANCES

V

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS

GD

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 10 V, V

I

= 1.5 A

D

= 25 V

DS

= 30 V,

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(ON)

Rise Time t
Turn−Off Delay Time t

d(OFF)

Fall Time t

V

= 10 V, V

GS

I

= 1.5 A, R

r

f

D

R

= 25 Ω

L

= 25 V,

DD

= 9.1 Ω

G

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

RR

a
b

RR

V

V

= 0 V,

GS

I

= 1.5 A

S

= 0 V, dI

/dt = 100 A/s,

I

= 1.5 A

S

T

T

3. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

66.4 mV/°C

= 25°C −1.0

J

= 125°C −50

J

492
165

50

14.3

1.2

2.3

5.2

11

7.6
65
38

= 25°C −1.10 −1.30

J

= 125°C −0.9

J

36

,

20
16

0.139 nC

A

mΩ

pF

nC

ns

V

ns

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