ON Semiconductor NTF2955 Technical data

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NTF2955

Power MOSFET

−60 V, −2.6 A, Single P−Channel SOT−223

Features

• TMOS7 Design for low R

• Withstands High Energy in Avalanche and Commutation Modes

Applications

• Power Supplies

• PWM Motor Control

• Converters

• Power Management

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1) State

Power Dissipation (Note 1)

Continuous Drain Current (Note 2) State

Power Dissipation (Note 2)

Pulsed Drain Current tp = 10 s I Operating Junction and Storage Temperature TJ,

Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A, L = 10 mH, R

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

THERMAL RESISTANCE RATINGS

Junction−to−Tab (Drain) − Steady State (Note 2) R Junction−to−Ambient − Steady State (Note 1) R Junction−to−Ambient − Steady State (Note 2) R

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu. area = 0.341 in

= 25 )

G

Parameter Symbol Max Unit

2

DS(on)

= 25°C unless otherwise noted)

J

Steady

Steady State

Steady

[1 oz] including traces)

TA = 25°C TA = 85°C −2.0

TA = 25°C P

TA = 25°C TA = 85°C −1.3 TA = 25°C P

2

)

Symbol Value Unit

D

L

JC JA JA

−60 V ±20 V

−2.6

2.3

−1.7

1.0 W

−10.4 A

−55 to 175

260 °C

14 65

150

DSS

GS

I

D

I

D

DM

T

STG

EAS 225 mJ

T



A

W

A

°C

°C/W

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R

TYP

(BR)DSS

−60 V 145 m @ −10 V

DS(on)

P−Channel

D

G

S

ID MAXV

−2.6 A

MARKING

4

1

2

3

2955 = Device Code L = Location Code WW = Work Week

SOT−223

CASE 318E

STYLE 3

DIAGRAM

2955 LWW

PIN ASSIGNMENT

4

Drain

Gate Drain Source

321

ORDERING INFORMATION

Device Package Shipping

NTF2955T1 SOT−223 1000/Tape & Reel NTF2955T3 SOT−223 4000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

†

 Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 1

1 Publication Order Number:

NTF2955/D

NTF2955

()

R

L

25 Ω

V

GS

= 0 V, dIS/dt = 100 A/s

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

DS

V

GS

DS

= 0 V,

= −60 V

= 0 V, I

= 0 V, V

= −250 A −60 V

D

T

= ±20 V ±100 nA

GS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VDS, ID = −1.0 mA −2.0 −4.0 V

GS

V

= −10 V, I

GS

V

= −10 V, I

GS

VGS = −10 V, I

V

= −15 V, I

GS

= −0.75 A 145 170

D

= −1.5 A 150 180

D

= −2.4 A 154 185

D

= −0.75 A 1.77 S

D

CHARGES AND CAPACITANCES

V

Input Capacitance Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

C

ISS OSS RSS

G(TOT)

G(TH)

GS

GD

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 10 V, V

I

= 1.5 A

D

= 25 V

DS

= 30 V,

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(ON)

Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t

V

= 10 V, V

GS

I

= 1.5 A, R

r

f

D

R

= 25 Ω

L

= 25 V,

DD

= 9.1 Ω

G

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

V

SD

RR

a b

RR

V

= 0 V,

GS

I

= 1.5 A

S

= 0 V, dI

/dt = 100 A/s,

I

= 1.5 A

S

T

3. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

66.4 mV/°C

= 25°C −1.0

J

= 125°C −50

J

492 165

50

14.3

1.2

2.3

5.2

11

7.6 65 38

= 25°C −1.10 −1.30

J

= 125°C −0.9

J

36

,

20 16

0.139 nC

A

mΩ

pF

nC

ns

V

ns

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2

NTF2955

TYPICAL PERFORMANCE CURVES (T

10

8

6

4

DRAIN CURRENT (AMPS)

2

D,

−I 0

0

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.4 VGS = −10 V

0.3

0.2

0.1

VGS = −10 V to −7 V

3

VGS = −6 V

TJ = 25 °C

VGS = −5.5 V

VGS = −5 V

VGS = −4.5 V

VGS = −3.8 V

456789

TJ = 125°C

TJ = 25°C

TJ = −55°C

= 25°C unless otherwise noted)

J

10

V

≥ 10 V

DS

8

TJ = 25°C

TJ = −55°C

TJ = 125°C

6

4

DRAIN CURRENT (AMPS)

2

D,

−I

1021

0

210846

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0.25

0.225

TJ = 25°C

0.2

0.175 VGS = −10 V

0.15

0.125

VGS = −15 V

0.1

DRAIN−TO−SOURCE RESISTANCE (Ω)

0

DS(on),

R

0

−I

44

DRAIN CURRENT (AMPS)

D,

Figure 3. On−Resistance versus Drain Current

and Temperature

2

ID = −1.5 A

1.8 V

= −10 V

GS

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

0.075

DRAIN−TO−SOURCE RESISTANCE (Ω)

0.05

82

106

DS(on),

R

0

2

1086

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

, LEAKAGE (nA)

−I

150

DSS

10

54060302010 50

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

TJ = 125°C

45352515 55

Figure 6. Drain−to−Source Leakage Current

versus V oltage

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NTF2955

TYPICAL PERFORMANCE CURVES (T

1200

1000

VDS = 0 V

C

iss

VGS = 0 V

800

C

rss

600

400

C, CAPACITANCE (pF)

200

0

10 10 155020525

−V

GS

DS

GATE−TO−SOURCE OR DRAIN−T O−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = −25 V I

= −1.5 A

D

V

= −10 V

GS

TJ = 25°C

C

C C

iss

oss

rss

= 25°C unless otherwise noted)

J

12

Q

10

T

8

Q

GS

Q

GD

6

4

V

DS

2

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS

0108416

V

Q

62

, TOTAL GATE CHARGE (nC)

g

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus T otal Charge

5

VGS = 0 V T

= 25°C

J

4

V

GS

ID = −1.5 A T

= 25°C

J

1412

60

50

40

30

20

10

0

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100

t

d(off)

t

f

t, TIME (ns)

10

1

t

d(on)

t

r

1 10 100 0 0.50.25

3

2

1

, SOURCE CURRENT (AMPS)

S

−I 0

RG, GATE RESISTANCE (Ω)

Figure 9. Resistive Switching Time Variation

Figure 10. Diode Forward Voltage versus Current

versus Gate Resistance

100

VGS = −20 V SINGLE PULSE

= 25°C

10

T

C

10 µs

100 µs

1 ms

1

10 ms

dc

0.1

, DRAIN CURRENT (AMPS)

D

−I

THERMAL LIMIT

R

DS(on)

LIMIT

PACKAGE LIMIT

0.01

0.1 10 1001 25 125 15010075 17550

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

250

200

150

100

50

AVALANCHE ENERGY (mJ)

, SINGLE PULSE DRAIN−TO−SOURCE

0

AS

E

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.75 1

1.25 1.5

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IPK = −6.7 A

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

1.75

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4

0.08 (0003)

S

L

H

A

F

4

123

G

NTF2955

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE K

B

D

C

M

K

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10

J



S 0.264 0.287 6.70 7.30

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERS

2.0

0.079

SOLDERING FOOTPRINT

3.8

0.15

2.0

0.079

2.3

0.091

1.5

0.059

2.3

0.091

6.3

0.248

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NTF2955

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTF2955/D

6

ON Semiconductor NTF2955 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual