ON Semiconductor NTD78N03 Technical data

NTD78N03

y

)

e

Power MOSFET

25 V, 78 A, Single N−Channel, DPAK

Features

• Low R

• Optimized Gate Charge

• Pb−Free Packages are Available

Applications

• Desktop VCORE

• DC−DC Converters

• Low Side Switch

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)
Power Dissipation

(Note 1)
Continuous Drain

Current (Note 2)
Power Dissipation

(Note 2)
Continuous Drain

Current (R
Power Dissipation

(R
Pulsed Drain Current
Current Limited by Package TA = 25°C I
Drain to Source dV/dt dV/dt 8.0 V/ns
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (VDD = 24 V, VGS = 10 V,
L = 5.0 mH, IL(pk) = 17 A, RG = 25 W)

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)

THERMAL RESISTANCE

Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

2. Surface−mounted on FR4 board using the minimum recommended pad size.

DS(on)

J

Parameter Symbol Value Unit

Stead

)

q

JC

)

q

JC

sq [1 oz] including traces).

= 25°C unless otherwise noted)

DSS

GS

TC = 25°C
TC = 85°C 11.5
TC = 25°C P

TC = 25°C
TC = 85°C 8.8

State

TC = 25°C P

TC = 25°C
TC = 85°C 56
TC = 25°C P

tp = 10 ms

I

D

D

I

D

D

I

D

D

I

DM

DmaxPkg

stg

S

E

AS

T

L

R

q

JC

R

q

JA

R

q

JA

25 V

"20 V

14.8

2.3 W

11.4

1.4 W

78

64 W

210 A

45 A

−55 to 175 °C
78 A

722.5 mJ

260 °C

1.95
65

110

°C/W

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R

TYP

(BR)DSS

25 V

G

A

A

2

1

3

A

CASE 369AA

DPAK

(Bend Lead)

STYLE 2

DS(on)

4.6 @ 10 V

6.5 @ 4.5 V

D

4

1

2

CASE 369D

DPAK

(Straight Lead)

STYLE 2

S

4

3

ID MAXV

78 A

N−Channel

4

1

2

3

CASE 369AD

IPAK

(Straight Lead

MARKING DIAGRAMS

& PIN ASSIGNMENTS

4

Gate

1

Drain

YWW78N03G

2

3

Drain

Sourc

Drain

YWW78N03G

Drain

1

Gate

4

2

3

Source

Y = Year
WW = Work Week
78N03 = Device Code
G = Pb−Free Package

Gate

1

4

Drain

YWW78N03G

2

Drain

3

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2006

September, 2006 − Rev. 6

1 Publication Order Number:

NTD78N03/D

NTD78N03

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 20 V

TJ = 25°C 1.5 mA

TJ = 125°C 10

VDS = 0 V, VGS = "20 V "100 nA

25 V

24 mV/°C

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 78 A 4.6 6.0 mW

1.0 1.6 3.0 V

−5.0 mV/°C

VGS = 4.5 V, ID = 36 A 6.5 7.8

Forward Transconductance gFS VDS = 10 V, ID = 15 A 22 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

iss

oss

rss

G(TOT)

G(TH)

GS
GD

VGS = 0 V, f = 1.0 MHz,

VDS = 12 V

VGS = 4.5 V, VDS = 20 V,

ID = 20 A

1920 2250

960
420

25.5 35

2.4

5.3

18.2

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(on)

r

d(off)

f

VGS = 4.5 V, VDS = 20 V,

ID = 20 A, R

= 3.0 W

G

11
68
23
42

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V,

IS = 20 A

Reverse Recovery Time t
Charge Time ta 17.8
Discharge Time tb 21
Reverse Recovery Time Q

RR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 20 A

RR

TJ = 25°C 0.83 1.0

TJ = 125°C 0.7

39

33 nC

PACKAGE PARASITIC VALUES

Source Inductance L
Drain Inductance L
Gate Inductance L
Gate Resistance R

S
D
G
G

Ta = 25C

2.49

0.02

3.46

1.0

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

pF

nC

ns

V

ns

nH

W

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2

NTD78N03

R

, DRAIN−TO−SOURCE RESISTANCE (

)

6

R

, DRAIN−TO−SOURCE RESISTANCE

100

VGS = 4 V

4.5 V

5 V

9 V

TJ = 25°C

2

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

864

3.8 V

3.6 V

3.4 V

3.2 V

3 V

2.6 V
10

90
80
70
60

50
40
30
20

, DRAIN CURRENT (AMPS)

D

I

10

0

0

Figure 1. On−Region Characteristics

W

0.01

0.009

0.008

0.007

0.006

0.005

0.004

0.003

0.002

0.001

DS(on)

0

10

20 60 70 80

TJ = 125°C

TJ = 25°C

TJ = −55°C

40

5030

ID, DRAIN CURRENT (A)

VGS = 10 V

160

VDS ≥ 10 V

150
140
130
120
110
100

90
80
70
60
50
40

, DRAIN CURRENT (AMPS)

30

D

I

20
10

0

03

TJ = 125°C

TJ = 25°C

TJ = −55°C

21

VGS, GATE−TO−SOURCE VOLTAGE (V)

45

Figure 2. Transfer Characteristics

0.015
TJ = 25°C

0.01

0.005

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

0

55

60 65 70 75 80

VGS = 4.5 V

VGS = 10 V

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance versus

Drain Current and Temperature

3

ID = 78 A
V

= 4.5 V

DS

2.5

2

1.5

1

(NORMALIZED)

0.5

0

DS(on)

−50 100750−25 125 175
TJ, JUNCTION TEMPERATURE (°C)

5025

Figure 5. On−Resistance Variation with

Temperature

100000

10000

1000

, LEAKAGE (nA)

DSS

I

100

10

150

5201510 25

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3

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−To−Source Leakage

Current versus Voltage