ON Semiconductor NTD4804N Technical data
NTD4804N
)
)
e
Power MOSFET
30 V, 117 A, Single N−Channel, DPAK/IPAK
Features
• Low R
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current (R
Power Dissipation
(R
) (Note 1)
q
JA
Continuous Drain
Current (R
Power Dissipation
(R
) (Note 2)
q
JA
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
) (Note 1)
q
JC
Pulsed Drain Current
Current Limited by Package TA = 25°C I
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, I
Lead Temperature for Soldering Purpos es
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
to Minimize Conduction Losses
DS(on)
= 25°C unless otherwise noted)
J
Parameter Symbol Value Unit
DSS
GS
) (Note 1
q
JA
) (Note 2
q
JA
)
q
JC
= 30 A, RG = 25 W)
L(pk)
Steady
State
tp=10ms
TA = 25°C
TA = 85°C 15
TA = 25°C P
TA = 25°C
TA = 85°C 11
TA = 25°C P
TC = 25°C
TC = 85°C 91
TC = 25°C P
TA = 25°C I
I
D
D
I
D
D
I
D
D
DM
DmaxPkg
stg
S
E
AS
T
L
30 V
"20 V
19
2.5 W
14.5
1.43 W
117
93.75 W
230 A
45 A
− 55 to
175
78 A
450 mJ
260 °C
A
A
A
°C
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(BR)DSS
30 V
G
2
1
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
DS(on)
4.0 mW @ 10 V
5.5 mW @ 4.5 V
D
4
CASE 369AD
3 IPAK
(Straight Lead)
MAX
S
ID MAXV
117 A
N−Channel
4
1
2
3
CASE 369D
IPAK
(Straight Lead
DPAK)
R
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Gate
1
4
Drain
YWW4804NG
2
3
Drain
Sourc
Drain
YWW4804NG
Drain
1
Gate
1
Gate
4
Drain
YWW4804NG
2
Drain
4
2
3
Source
Y = Year
WW = Work Week
4804N = Device Code
G = Pb−Free Package
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 4
1 Publication Order Number:
NTD4804N/D
NTD4804N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
q
R
q
JC
JC−TAB
R
q
JA
R
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage
V
(BR)DSS
(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
30 V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
DSS
GSS
VGS = 0 V,
VDS = 24 V
VDS = 0 V, VGS = "20 V "100 nA
TJ = 25°C 1.0 mA
TJ = 125°C 10
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
Negative Threshold Temperature
V
GS(TH)
GS(TH)/TJ
VGS = VDS, ID = 250 mA
1.5 2.5 V
Coefficient
Drain−to−Source On Resistance R
DS(on)
VGS = 10 to 11.5 V
ID = 30 A 3.4 4.0 mW
ID = 15 A 3.4
VGS = 4.5 V
ID = 30 A 4.7 5.5
ID = 15 A 4.6
Forward Transconductance gFS VDS = 15 V, ID = 15 A 23 S
CHARGES AND CAPACITANCES
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
iss
oss
rss
G(TOT)
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
VGS = 11.5 V, VDS = 15 V,
4490
ID = 30 A
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(on)
r
d(off)
f
d(on)
r
d(off)
f
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, R
= 3.0 W
G
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, R
= 3.0 W
G
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
1.6
3.5
60
105
26 mV/°C
7.6 mV/°C
952
556
30 40
5.5
13
13
73 nC
18
20
24
8
10
19
35
5
°C/W
pF
nC
ns
ns
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2
NTD4804N
,
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Parameter Symbol Test Condition Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
VGS = 0 V,
IS = 30 A
Reverse Recovery Time t
Charge Time ta 19
RR
VGS = 0 V, dIs/dt = 100 A/ms
Discharge Time tb 15
Reverse Recovery Time Q
RR
TJ = 25°C 0.81 1.2
TJ = 125°C 0.72
IS = 30 A
PACKAGE PARASITIC VALUES
Source Inductance L
Drain Inductance, DPAK L
Drain Inductance, IPAK L
Gate Inductance L
Gate Resistance R
S
D
D
G
G
TA = 25°C
34
30 nC
2.49
0.0164
1.88
3.46
0.6
V
ns
nH
W
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3
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