ON Semiconductor NTD20N03L27 Technical data

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NTD20N03L27

Power MOSFET

20 Amps, 30 Volts, N−Channel DPAK

This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.

Features

• Pb−Free Packages are Available

• Ultra−Low R

• SPICE Parameters Available

• Diode is Characterized for use in Bridge Circuits

• I

and V

DSS

DS(on)

• High Avalanche Energy Specified

• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

T ypical Applications

• Power Supplies

• Inductive Loads

• PWM Motor Controls

• Replaces MTD20N03L in many Applications

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 M) V
Gate−to−Source Voltage

− Continuous

− Non−Repetitive (t

Drain Current

− Continuous @ T

− Continuous @ T

− Single Pulse (t

Total Power Dissipation @ TA = 25C

Derate above 25°C

Total Power Dissipation @ T
Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T
(V

= 30 Vdc, VGS = 5 Vdc, L = 1.0 mH,

DD

= 24 A, VDS = 34 Vdc)

I

L(pk)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

pad size and repetitive rating; pulse width limited by maximum junction
temperature.

, Single Base, Advanced Technology

DS(on)

Specified at Elevated Temperatures

= 25°C unless otherwise noted)

C

Rating

10 s)

p

= 25°C

J

10 ms)

p

= 25C

A

= 100C

A

= 25°C (Note 1)

C

Symbol Value Unit

V
V

E

R
R
R

DSS
DGR

GS
GS

I
I

I

DM

P

AS







T

30 Vdc
30 Vdc

20
24

stg

20
16
60

74

0.6

1.75

−55 to
150

288 mJ

1.67
100

71.4
260 °C

D
D

D

JC
JA
JA

L

Vdc

Adc

Apk

W

W/°C

W

°C

°C/W

http://onsemi.com

20 A, 30 V, R

N−Channel

G

DS(on)

D

= 27 m

S

MARKING

DIAGRAMS

4

Drain

4

2

1

3

4

1

2

3

20N3L = Device Code
A = Assembly Location
Y = Year
WW = Work Week

DPAK

CASE 369C

STYLE 2

DPAK−3

CASE 369D

STYLE 2

Gate

Gate

AYWW20N3L

2

1

Drain

4

Drain

AYWW20N3L

1

2

Drain

3
Source

3
Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

 Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 2

1 Publication Order Number:

NTD20N03L27/D

NTD20N03L27

f

)

)

R

(Note 2)

GaeC age

V

2)

e e se eco e y e

s

(I

S

Adc, V

GS

Vdc

S

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 2)

(VGS = 0 Vdc, ID = 250 Adc)

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 30 Vdc, VGS = 0 Vdc)

DS

= 30 Vdc, VGS = 0 Vdc, TJ =150°C)

(V

DS

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (Note 2)

(VDS = VGS, ID = 250 Adc)

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)

(V

= 4.0 Vdc, ID = 10 Adc)

GS

= 5.0 Vdc, ID = 10 Adc)

(V

GS

Static Drain−to−Source On−Voltage (Note 2)

(V

= 5.0 Vdc, ID = 20 Adc)

GS

= 5.0 Vdc, ID = 10 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

= 1.0 MHz

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(V

= 20 Vdc, ID = 20 Adc,

Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge

DD

VGS = 5.0 Vdc,

= 9.1 ) (Note 2

= 9.1 )

R

G

(VDS = 48 Vdc, ID = 15 Adc,

= 10 Vdc) (Note

GS

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 2)

(I

= 20 Adc, VGS = 0 Vdc, TJ = 125°C)

S

Reverse Recovery Time

(IS =15 Adc, VGS = 0 Vdc,

15
/dt = 100 A/s) (Note 2)

dl

S

0

,

Reverse Recovery Stored Charge

2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

C
C
C

t

d(on)

t

d(off)

Q

Q
Q

V

t
t
t

Q

FS

iss
oss
rss

t

r

t

f

SD

rr

a

b
RR

30

−

−

−

43

−

−

−

−

−

10

100

− − ±100 nAdc

1.0

−

−

−

−

−

1.6

5.0

28
23

0.48

0.40

2.0

−

31
27

0.54

−

− 21 − mhos

− 1005 1260 pF

− 271 420

− 87 112

− 17 25 ns

− 137 160

− 38 45

− 31 40

T
1
2

− 13.8 18.9 nC

− 2.8 −

− 6.6 −

−

−

1.0

0.9

1.15

−

− 23 −

− 13 −

− 10 −

− 0.017 − C

Vdc

mV/°C

Adc

Vdc

mV/°C

m

Vdc

Vdc

ns

ORDERING INFORMATION

NTD20N03L27 DPAK 75 Units/Rail
NTD20N03L27G DPAK

NTD20N03L27−1 DPAK−3 75 Units/Rail
NTD20N03L27−1G DPAK

NTD20N03L27T4 DPAK 2500 Tape & Reel
NTD20N03L27T4G DPAK

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Device Package Shipping

75 Units/Rail

(Pb−Free)

75 Units/Rail

(Pb−Free)

2500 Tape & Reel

(Pb−Free)

http://onsemi.com

2

†