ON Semiconductor NTB90N02, NTP90N02 Technical data

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NTB90N02, NTP90N02

Power MOSFET 90 Amps, 24 Volts

N−Channel D2PAK and TO−220

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

(BR)DSS

24 V

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R

TYP

DS(on)

5.0 m @ 10 V

7.5 m @ 4.5 V

ID MAXV

90 A

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage

− Continuous

Drain Current

− Continuous @ T

− Single Pulse (t

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Temperature TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T (V

= 28 Vdc, VGS = 10 Vdc, L = 5.0 mH,

DD

I

= 17 A, RG = 25 )

L(pk)

Thermal Resistance

Junction−to−Case Junction−to−Ambient (Note 1)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in

2. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu Area 0.412 in

*Chip current capability limited by package.

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

= 10 s)

p

= 25°C

J

2

).

2

).

Symbol Value Unit

D

stg

JC JA

L

24 Vdc

20

0.66WW/°C

+150

1.55

Vdc

90*

200

85

−55

733 mJ

70

260 °C

°C

to

°C/W

A A

R R

V

I

E

DSS

GS

I

D

DM

P

AS

 

T

1

Gate

2

3

4

Drain

NTx90N02 LLYWW

1

Drain

4

1

TO−220AB

CASE 221A

Style 5

MARKING DIAGRAMS

& PIN ASSIGNMENTS

NTx90N02 LLYWW

3 Source

2

NTx90N02 = Device Code x = P or B LL = Location Code Y = Year WW = Work Week

1

Gate

2

3

2

D

PAK

CASE 418B

Style 2

4

Drain

2

Drain

4

3 Source

N−Channel

D

G

S

 Semiconductor Components Industries, LLC, 2003

October, 2003 − Rev. 1

ORDERING INFORMATION

Device Package Shipping

NTP90N02 TO−220AB 50 Units/Rail NTB90N02 D2PAK 50 Units/Rail NTB90N02T4 D2PAK 800/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

NTB90N02/D

†

NTB90N02, NTP90N02

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 Adc)

Temperature Coefficient (Positive) Zero Gate Voltage Drain Current

= 24 Vdc, VGS = 0 Vdc)

(V

DS

(V

= 24 Vdc, VGS = 0 Vdc, TJ = 150°C)

DS

Gate−Body Leakage Current (VGS =  20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(V

= VGS, ID = 250 Adc)

DS

Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 3)

= 10 Vdc, ID = 90 Adc)

(V

GS

= 4.5 Vdc, ID = 40 Adc)

(V

GS

(V

= 10 Vdc, ID = 20 Adc)

GS

= 4.5 Vdc, ID = 20 Adc)

(V

GS

Forward Transconductance (Note 3) (VDS = 15 Vdc, ID = 10 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

(VDS = 20 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 4)

(V

Turn−On Delay Time Rise Time

= 20 Vdc, ID = 20 Adc,

DD

VGS = 4.5 Vdc, RG = 2.5 )

Turn−Off Delay Time t Fall Time t Gate Charge (VDS = 20 Vdc, ID = 20 Adc,

VGS = 4.5 Vdc) (Note 3)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 2.3 Adc, VGS = 0 Vdc)

(IS = 40 Adc, VGS = 0 Vdc) (Note 3)

(I

= 2.3 Adc, VGS = 0 Vdc, TJ = 150°C)

S

Reverse Recovery Time (IS = 2.3 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/s) (Note 3)

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

C

t

d(on)

d(off)

Q

Q Q

V

t t t

FS

iss oss rss

t

SD

rr

a

b RR

24

−

27 25

−

1.0 10

− − ±100 nAdc

1.0

−

1.9

−3.8

5.0

7.5

5.0

7.5

3.0

−

5.8

9.0

5.8

9.0

− 25 − mhos

− 2120 −

− 900 −

− 360 −

− 16 −

r

− 90 −

− 28 −

f

T 1 2

− 60 −

− 29 −

− 8.0 −

− 20 −

−

0.75

1.2

0.65

1.0

−

− 40 −

− 21 −

− 18 −

− 0.036 − C

Vdc

mV/°C

Adc

Vdc

mV/°C

m

pF

ns

nC

Vdc

ns

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2

NTB90N02, NTP90N02

100

9 V

90 80 70 60

50

8 V

4.6 V

4.8 V

5 V

6.5 V

40

30

20

, DRAIN CURRENT (AMPS)

D

I

10

0

0.5 43.5

0

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics

0.07

0.06

0.05

0.04

4.4 V

5.2 V 6 V

TJ = 25°C

21.51

2.5 3

4.2 V

4 V

3.8 V

3.6 V

3.4 V

3.2 V

VGS = 3.0 V

ID = 10 A T

= 25°C

J

160 150 140

VDS ≥ 24 V

130 120 110 100

90 80 70

TJ = 25°C

60 50 40

TJ = 125°C

30 20

, DRAIN CURRENT (AMPS)

10

D

I

0

23 6

V

TJ = −55°C

45

, GATE−TO−SOURCE VOLTAGE (V)

GS

Figure 2. Transfer Characteristics

0.015 TJ = 25°C

0.01

VGS = 4.5 V

0.03

0.02

0.01

, DRAIN−TO−SOURCE RESISTANCE ()

0

DS(on)

R

0

26810

4

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

0.015

0.0125

ID = 90 A V

= 4.5 V

DS

0.001

0.0075

0.005

0.0025

0

−50 100750−25 125 150

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

5025

TJ, JUNCTION TEMPERATURE (°C)

DS(on)

R

Figure 5. On−Resistance Variation with

Temperature

ID = 10 A V

= 10 V

DS

VGS = 10 V

0.005

, DRAIN−TO−SOURCE RESISTANCE ()

0

55

DS(on)

R

60 65 70 75 80

85 90

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

100

TJ = 125°C

TJ = 100°C

10

1

, LEAKAGE (nA)

DSS

I

0.1

0.01 41612820

TJ = 25°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

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