ON Semiconductor NTB75N03R, NTP75N03R Technical data

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NTB75N03R, NTP75N03R
Power MOSFET 75 Amps, 25 Volts
N−Channel D
PAK, TO−220
Features
Planar HD3e Process for Fast Switching Performance
Low R
Low C
to Minimize Conduction Loss
DS(on)
to Minimize Driver Loss
iss
Low Gate Charge
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V Gate−to−Source Voltage − Continuous V Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C Drain Current
− Continuous @ T
− Single Pulse (t
Thermal Resistance − Junction−to−Ambient
(Note 1) Total Power Dissipation @ T Drain Current − Continuous @ T
Thermal Resistance − Junction−to−Ambient
(Note 2) Total Power Dissipation @ T Drain Current − Continuous @ T
Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche Energy − Starting T (V
= 30 Vdc, V
DD
L = 1 mH, R Maximum Lead Temperature for Soldering
Purposes, 1/8 from Case for 10 Seconds
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in
2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in
p
J
= 10 Vdc, IL = 12 Apk,
GS
= 25 )
G
= 25°C Unless otherwise specified)
J
= 25°C
C
= 10 s)
= 25°C
A
= 25°C
A
= 25°C
A
= 25°C
A
= 25°C
2
).
2
).
Symbol Value Unit
stg
25 V
±20 V
1.68
74.4 75
225
60
2.08
12.6
100
1.25
9.7
−55 to 150
71.7 mJ
260 °C
°C/W
°C/W
°C/W
R
R
R
P
I
P
P
E
DSS
GS
JC D
I
D
DM
JA
D
I
D
JA
D
I
D
AS
T
L
W
W
W
°C
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75 AMPERES
25 VOLTS
R
DS(on)
dc dc
A A
A
A
1
2
Gate
3
4
Drain
P75N03R YWW
1
Drain
ORDERING INFORMATION
Device Package Shipping
= 5.6 m (Typ)
4
1
TO−220AB
CASE 221A
STYLE 5
MARKING DIAGRAMS
& PIN ASSIGNMENTS
3 Source
2
75N03 = Device Code Y = Year WW = Work Week
1
Gate
2
3
D2PAK
CASE 418AA
STYLE 2
4
Drain
75N03R YWW
2
Drain
3 Source
4
Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 2
NTP75N03R TO−220AB 50 Units/Rail NTB75N03R D2PAK 50 Units/Rail NTB75N03RT4 D2PAK 800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1 Publication Order Number:
NTB75N03R/D
NTB75N03R, NTP75N03R
)
f = 1 MHz)
(
(V
GS
V
d
V
DD
V
d
)
V
DS
V
d
) (Note 3)
g
Forward On−Voltage
V
SD
V
d
(
S dc,GS dc
)( )
(I
S
A
d
V
GS
V
d
ELECTRICAL CHARACTERISTICS (T
Characteristics
= 25°C Unless otherwise specified)
J
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
= 0 Vdc, I
GS
Temperature Coefficient (Positive)
= 250 Adc)
D
V
Zero Gate Voltage Drain Current
(V
= 20 Vdc, VGS = 0 Vdc)
DS
= 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
(V
DS
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
V
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 3)
R (VGS = 4.5 Vdc, ID = 20 Adc) (V
= 10 Vdc, ID = 20 Adc)
GS
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance
(VDS = 20 Vdc, VGS = 0 V,
f = 1 MHz
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t Rise Time Turn−Off Delay Time
V
= 10 V
= 10
ID = 30 Adc, RG = 3)
, V
,
c
= 10 V
= 10
,
,
c
Fall Time t Gate Charge
(VGS = 5 Vdc, ID = 30 Adc,
= 10
V
= 10 V) (Note 3
c
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Volta
e V
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) 0.73
Reverse Recovery Time
(I
= 35 A
= 35
dIS/dt = 100 A/s) (Note 3)
, V
= 0 V
= 0
,
,
c
,
c
Reverse Recovery Stored Charge Q
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
(br)DSS
I
DSS
I
GSS
GS(th)
DS(on)
g
FS
C
iss
C
oss
C
rss
d(on)
t
r
t
d(off)
f
Q
T
Q
1
Q
2
D
t
rr
t
a
t
b
RR
25
28
20.5
1.0 10
mV/°C
±100
1.0
1.5
4.0
8.1
5.6
2.0
13
8.0
mV/°C
Mhos
27
1333
600
218
6.9
1.3
18.4
5.5
13.2
3.3
6.2
0.86
1.2
15.6
13.8
1.78
0.004 C
V
A
nA
V
m
V
dc
dc
dc
dc
pF
ns
nC
c
ns
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2
NTB75N03R, NTP75N03R
140
10 V
120
100
80
5 V
8 V 6 V
4.5 V
4 V
3.5 V 60
40
, DRAIN CURRENT (AMPS)
D
I
20
3 V
VGS = 2.5 V
0
010
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
42
6
8
140
VDS 10 V
120
100
80
60
TJ = 25°C
40
, DRAIN CURRENT (AMPS)
D
I
20
TJ = 125°C
0
10
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
GS
23
TJ = −55°C
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.022
0.018
0.014
0.010
0.006
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.002
DS(on)
R
VGS = 10 V
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = −55°C
20 80
0
6040
100
120 140
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.022
0.018
0.014
0.010
0.006
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.002
DS(on)
R
VGS = 4.5 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
20 100
6040
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
45
TJ = 150°C
80
120
6
140
1.8 ID = 30 A
V
1.6
GS
= 10 V
1.4
1.2
1.0
(NORMALIZED)
0.8
, DRAIN−TO−SOURCE RESISTANCE
0.6
DS(on)
−50 50250−25 75 125100
R
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100,000
10,000
, LEAKAGE (nA)
1000
DSS
I
100
150
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3
VGS = 0 V
TJ = 150°C
TJ = 125°C
01510 255
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus V oltage
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