ON Semiconductor NTB65N02R, NTP65N02R Technical data
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NTB65N02R, NTP65N02R
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Power MOSFET
65 A, 24 V N-Channel
2
TO-220, D
Features
• Planar HD3e Process for Fast Switching Performance
• Low R
• Low C
• Low Gate Charge
• Fast Switching
to Minimize Conduction Loss
DSon
to Minimize Driver Loss
iss
PAK
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65 A, 24 V
R
DS(on)
= 8.3 m (TYP)
D
MAXIMUM RATINGS (T
Parameter
Drain–to–Source Voltage V
Gate–to–Source Voltage Continuous V
Drain Current(Continuous @ TA = 25°C (Note 3)
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature TJ and
Single Pulse Drain–to Source Avalanche
Energy – Starting T
= 50 Vdc, V
(V
DD
R
= 25 )
G
Thermal Resistance Junction–to–Case
Maximum Lead Temperature for Soldering
Purposes, 1/8” from Case for 10 Seconds
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area
1.127 in
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
3. Chip current capability limited by package.
J
GS
Junction–to–Ambient (Note 1)
Junction–to–Ambient (Note 2)
2
).
= 25°C Unless otherwise specified)
J
Single Pulse (tp = 10 s)
=25°C
= 5 Vdc, IL = Apk, L = 1 mH,
2
).
Symbol Value Unit
24 V
±20 V
65
160
78 W
–55 to
150
TBD mJ
1.6
°C/W
67
120
260 °C
dc
dc
A
A
°C
R
R
R
I
T
E
DSS
GS
I
D
DM
D
stg
AS
JC
JA
JA
T
L
G
S
MARKING
DIAGRAMS
TO–220AB
4
CASE 221A
Style 5
1
2
3
2
PAK
D
4
CASE 418B
2
1
3
Style 2
xxxxx
YWW
xxxxx
YWW
PIN ASSIGNMENT
PIN FUNCTION
1 Gate
2 Drain
3 Source
4 Drain
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Semiconductor Components Industries, LLC, 2002
October, 2002 – Rev. 0
1 Publication Order Number:
xxxxx = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device Package Shipping
NTB65N02R D
NTB65N02RT4 D2PAK 800 Tape & Reel
NTP65N02R TO–220AB 50 Units/Rail
2
PAK
50 Units/Rail
NTB65N02R/D
NTB65N02R, NTP65N02R
(
DS dc,GS
)
(V
GS
V
d
V
DD
V
d
)
V
DS
V
d
) (Note 4)
g
Forward On Voltage
(I
S
A
d
V
GS
V
d
) (Note 4)
V
SD
0.88
1.2–V
d
(
S dc,GS dc
)
(I
S
A
d
V
GS
V
d
ELECTRICAL CHARACTERISTICS (T
Characteristics
= 25°C Unless otherwise specified)
J
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 4)
(V
= 0 Vdc, I
GS
Temperature Coefficient (Positive)
= 250 Adc)
D
Zero Gate Voltage Drain Current
(V
= 20 Vdc, VGS = 0 Vdc)
DS
= 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
(V
DS
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
V(br)
I
DSS
I
GSS
DSS
24
–
–
–
27.5
25.5
–
–
– – ±100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 4)
(VGS = 4.5 Vdc, ID = 15 Adc)
(V
= 10 Vdc, ID = 20 Adc)
GS
(V
= 10 Vdc, ID = 30 Adc)
GS
Forward Transconductance (Note 4)
(VDS = 10 Vdc, ID = 15 Adc)
VGS(th)
RDS(on)
g
FS
1.0
–
–
–
–
1.5
–4.1
10.5
8.3
9.5
– 20 –
12.5
10.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 V f = 1 MHz)
C
iss
C
oss
C
rss
– 1050 1470
– 394 550
– 88 120
SWITCHING CHARACTERISTICS (Note 5)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(V
= 5 V
, VDD = 10 V
= 5
,
ID = 30 Adc, RG = 3)
c
= 10
,
,
c
td(on) – 11.2 20
t
r
– 52 100
td(off) – 10 20
Fall Time tf – 4 10
Gate Charge
(VGS = 4.5 Vdc, ID = 30 Adc,
V
= 10 V) (Note 4
= 10
c
Q
T
Q
1
Q
2
– 8.4 12
– 3.7 –
– 4.04 –
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Volta
e (I
= 20 A
= 20
, V
= 0 V
,
= 0
c
(IS = 30 Adc, VGS = 0 Vdc)
c
) (Note 4) V
D
– 0.88 1.2 V
–
1.10
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) – 0.80 –
Reverse Recovery Time
(I
= 20 A
= 20
dIS/dt = 100 A/s) (Note 4)
, V
= 0 V
= 0
,
,
c
,
c
Reverse Recovery Stored Charge Q
t
t
t
rr
a
b
RR
– 15.5 –
– 12.6 –
– 2.6 –
– 0.005 – C
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.5
15
2.0
V
–
–
–
dc
mV/°C
A
dc
nA
dc
V
dc
mV/°C
m
–
Mhos
pF
ns
nC
c
ns
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