ON Semiconductor NTB30N20 User Manual

NTB30N20

l l

Power MOSFET 30 Amps, 200 Volts

N−Channel Enhancement−Mode D2PAK

Features

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Avalanche Energy Specified

• I

and R

DSS

• Mounting Information Provided for the D

Specified at Elevated Temperature

DS(on)

PAK Package

• Pb−Free Packages are Available

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage

− Continuous

− Non−Repetitive (tpv10 ms)

Drain Current − Continuous @ TA 25°C

− Continuous @ TA 100°C

− Pulsed (Note 2)

Total Power Dissipation @ TA = 25°C Derate above 25°C

Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range TJ, T

Single Drain−to−Source Avalanche Energy, Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 20 A, L = 3.0 mH, RG = 25 W)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

Maximum Lead Temperature for Soldering Purposes for 10 seconds

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).

2. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.

= 25°C unless otherwise noted)

Rating Symbol Value Unit

stg

JC JA JA

200 Vdc 200 Vdc

"30 "40

30 22 90

214

1.43

2.0

− 55 to +175

450

0.7

62.5

260 °C

Vdc

Adc

W/°C

°C

°C/W

DSS

DGR

GSM

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DSS

200 V

TYP ID MAX

DS(ON)

68 mW @ VGS = 10 V

N−Channel

30 A

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate

Drain

30N20G AYWW

Drain

Source

D2PAK

CASE 418B

STYLE 2

30N20 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

NTB30N20 D2PAK 50 Units/Rail NTB30N20G D2PAK

(Pb−Free) NTB30N20T4 D2PAK 800 Tape & Ree NTB30N20T4G D2PAK

(Pb−Free) †For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

50 Units/Rail

800 Tape & Ree

†

August, 2005 − Rev. 4

1 Publication Order Number:

NTB30N20/D

NTB30N20

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive) Zero Gate Voltage Collector Current

(VGS = 0 Vdc, VDS = 200 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 175°C)

Gate−Body Leakage Current (VGS = ± 30 Vdc, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage

VDS = V

ID = 250 mAdc)

GS,

Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance

(VGS = 10 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 175°C)

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 30 Adc)

Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

(VDS = 160 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time

Rise Time t

= 100 Vdc, ID = 18 Adc,

VGS = 5.0 Vdc, RG = 2.5 W)

Turn−Off Delay Time t

= 160 Vdc, ID = 30 Adc,

VGS = 10 Vdc, RG = 9.1 W)

Fall Time t

Gate Charge

(VDS = 160 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

(VDS = 160 Vdc, ID = 18 Adc,

VGS = 5.0 Vdc)

BODY−DRAIN DIODE RATINGS (Note 3)

Forward On−Voltage (IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)

Reverse Recovery Time

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

Reverse Recovery Stored Charge Q

3. Indicates Pulse Test: P. W. = 300 ms max, Duty Cycle = 2%.

4. Switching characteristics are independent of operating junction temperature.

(BR)DSS

DSS

GSS

GS(th)

DS(on)

d(on)

d(off)

t t t

iss

oss

rss

tot

rr a b

200

−

307

−

mV/°C

mAdc

Vdc

−

5.0

125

− − ± 100 nAdc

Vdc

2.0

−

2.9

−8.9

0.068

0.067

0.200

4.0

−

0.081

0.080

0.240

mV/°C

Vdc

− 2.0 2.5

− 20 − Mhos

− 2335 − pF

−

380 148

−

− 75 −

−

10 12

20 70

40 82

24 88

75 48

20 16

−

100

−

− 32 −

−

0.91

0.80

1.1

−

Vdc

− 230 −

− 140 −

− 85 −

− 1.85 −

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NTB30N20

, DRAIN CURRENT (AMPS)

, DRAIN−TO−SOURCE RESISTANCE (

)

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

0.15

0.2

0.1

VGS = 10 V

9 V

7 V

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

6 V

TJ = 25°C

8 V

5 V

4 V

Figure 1. On−Region Characteristics

VGS = 10 V

TJ = 100°C

TJ = 25°C

VDS ≥ 10 V

, DRAIN CURRENT (AMPS)

106420

080

TJ = 25°C

TJ = 100°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = −55°C

6420

Figure 2. Transfer Characteristics

0.1 TJ = 25°C

0.09

0.08

0.07

VGS = 10 V

VGS = 15 V

0.05

DS(on)

Figure 3. On−Resistance versus Drain Current

2.5

1.5

0.5

DS(on),

ID = 15 A VGS = 10 V

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

TJ = −55°C

3525155

ID, DRAIN CURRENT (AMPS)

and Temperature

Temperature

0.06

, DRAIN−TO−SOURCE RESISTANCE (W)

5545

0.05

DS(on)

ID, DRAIN CURRENT (AMPS)

453525155

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

100000

1751251007550250−25−50

10000

, LEAKAGE (nA)

DSS

1000

100

VGS = 0 V

TJ = 175°C

TJ = 100°C

4020

60 20

808100 120 140

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

160 180150

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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ON Semiconductor NTB30N20 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual