ON Semiconductor NTB125N02R, NTP125N02R Technical data

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NTB125N02R, NTP125N02R

Power MOSFET
125 A, 24 V N−Channel

2

TO−220, D

Features

• Planar HD3e Process for Fast Switching Performance

• Body Diode for Low t

Operation

• Low C

• Optimized Q

• Low Gate Charge

to Minimize Driver Loss

iss

and R

gd

PAK

and Qrr and Optimized for Synchronous

rr

for Shoot−through Protection

DS(on)

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125 AMPERES, 24 VOLTS

R

DS(on)

= 3.7 m (Typ)

D

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Thermal Resistance − Junction−to−Case

Total Power Dissipation @ TC = 25°C
Drain Current −

Continuous @ T
Continuous @ T
Continuous @ TA = 25°C, Limited by Wires
Single Pulse (t

Thermal Resistance −

Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Drain Current − Continuous @ T

Thermal Resistance −

Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Drain Current − Continuous @ T

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V

= 50 Vdc, V

DD

L = 1 mH, R
Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in

2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in

= 25 )

G

C

C

= 10 s)

p

J

GS

= 25°C Unless otherwise specified)

J

= 25°C, Chip

= 25°C, Limited by Package

= 25°C

A

= 25°C

A

= 25°C

A

= 25°C

A

= 25°C

= 10 Vdc, IL = 15.5 Apk,

2

).

2

).

Symbol Value Unit

stg

24 V

±20 V

1.1

113.6
125

120.5

95

250

46

2.72

18.6

63

1.98

15.9

−55 to
150

120 mJ

260 °C

dc
dc

°C/W

W

A
A
A
A

°C/W

W

A

°C/W

W

A

°C

R

R

R

P

P

P

E

DSS

GS



JC
D

I

D

I

D

I

D

I

D



JA
D

I

D



JA
D

I

D

AS

T

L

PIN ASSIGNMENT

PIN FUNCTION

1 Gate
2 Drain
3 Source
4 Drain

G

S

MARKING

DIAGRAMS

TO−220AB

4

CASE 221A

STYLE 5

1

2

3

2

D

4

2

1

3

125N2 = Specific Device Code
Y = Year
WW = Work Week

PAK

CASE 418AA

STYLE 2

125N2R

YWW

125N2

YWW

ORDERING INFORMATION

Device Package Shipping

2

NTB125N02R D
NTB125N02RT4 D2PAK 800/Tape & Reel

NTP125N02R TO−220AB 50 Units/Rail
†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

PAK

50 Units/Rail

†

 Semiconductor Components Industries, LLC, 2003

October, 2003 − Rev. 4

1 Publication Order Number:

NTB125N02R/D

NTB125N02R, NTP125N02R

(

DS dc,GS

,)

(

(V

GS

V

d

V

DD

V

d

)

V

DS

V

d

) (Note 3)

g

Forward On−Voltage

(I

S

A

d

V

GS

V

d

) (Note 3)

VSD−−0.82

1.2−V

d

(

S dc,GS dc

)

(I

S

A

d

V

GS

V

d

ELECTRICAL CHARACTERISTICS (T

Characteristics

= 25°C Unless otherwise specified)

J

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(V

= 0 Vdc, I

GS

Temperature Coefficient (Positive)

= 250 Adc)

D

Zero Gate Voltage Drain Current

(V

= 20 Vdc, VGS = 0 Vdc)

DS

= 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

(V

DS

Gate−Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

V

(BR)DSS

I

DSS

I

GSS

25

−

−

−

28
15

−

−

− − ±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 Adc)

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)

(VGS = 10 Vdc, ID = 110 Adc)
(V

= 4.5 Vdc, ID = 55 Adc)

GS

(V

= 10 Vdc, ID = 20 Adc)

GS

= 4.5 Vdc, ID = 20 Adc)

(V

GS

Forward Transconductance (Note 3)

(VDS = 10 Vdc, ID = 15 Adc)

V

GS(th)

R

DS(on)

g

FS

1.0

−

−

−

−

−

1.5

5.0

3.7

4.9

3.7

4.7

− 44 −

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)

C

iss

C

oss

C

rss

− 2710 3440

− 1105 1670

− 227 640

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

= 10 V

= 10

ID = 40 Adc, RG = 3)

, V

,

c

= 10 V

= 10

t

d(on)

t

t

d(off)

r

,

,

c

− 11 22

− 39 80

− 27 40
Fall Time tf − 21 40
Gate Charge

(VGS = 4.5 Vdc, ID = 40 Adc,

= 10

V

= 10 V) (Note 3

c

Q

T

Q

1

Q

2

− 23.6 28

− 5.1 −

− 11 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Volta

e (I

= 20 A

= 20

, V

= 0 V

,

= 0

c

(IS = 55 Adc, VGS = 0 Vdc)

) (Note 3) V

c

D

− 0.82 1.2 V

0.99

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.65 −

Reverse Recovery Time

(I

= 30 A

= 30

dIS/dt = 100 A/s) (Note 3)

, V

= 0 V

= 0

,

,

c

,

c

Reverse Recovery Stored Charge Q

t
t
t

rr
a
b

RR

− 36.5 −

− 17.7 −

− 18.8 −

− 0.024 − C

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.

4. Switching characteristics are independent of operating junction temperatures.

1.5
10

2.0

4.6

6.2

V

−

−

−

dc

mV/°C

A

dc

nA

dc

V

dc

mV/°C

m

−

−

Mhos

pF

ns

nC

c

ns

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2

NTB125N02R, NTP125N02R

200

160

120

80

40

, DRAIN CURRENT (AMPS)

D

I

0

010

4.0 V

4.5 V

5.0 V

6.0 V

8.0 V

10 V

42

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

6

3.5 V

3.0 V

VGS = 2.5 V

8

200

VDS ≥ 10 V

160

120

80

40

, DRAIN CURRENT (AMPS)

D

I

0

0 1.60.8

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 125°C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.01

0.008

0.006

0.004

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0.002

DS(on)

R

VGS = 10 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

0

40 200

ID, DRAIN CURRENT (AMPS)

16012080

Figure 3. On−Resistance versus Drain Current

and Temperature

0.01
VGS = 4.5 V

0.008

0.006

0.004

, DRAIN−TO−SOURCE RESISTANCE (Ω)

0.002

DS(on)

0 1601208040 200

R

ID, DRAIN CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = −55°C

Figure 4. On−Resistance versus Drain Current

and Temperature

TJ = −55°C

2.4 3.2 4.0

1.8
ID = 55 A

V

1.6

1.4

1.2

1.0

(NORMALIZED)

0.8

, DRAIN−TO−SOURCE RESISTANCE

0.6

DS(on)

−50 50250−25 75 125100

R

= 4.5 V

GS

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

100,000

10,000

1000

, LEAKAGE (nA)

DSS

I

100

10

150

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3

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 100°C

016128.0 244.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus V oltage

20

NTB125N02R, NTP125N02R

7000

6000

C

VDS = 0 V

iss

VGS = 0 V

5000

C

4000

3000

2000

C, CAPACITANCE (pF)

rss

C

iss

C

oss

1000

C

0

10

TJ = 25°C

5

10

V

V

GS

DS

rss

155020

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

VDS = 10 V
I

= 40 A

D

= 10 V

V

GS

10

8.0
V

GS

6.0

Q

4.0

Q

1

2.0

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS

V

0243216848

T

Q

2

, TOTAL GATE CHARGE (nC)

Q

g

ID = 40 A
T

= 25°C

J

40

Drain−to−Source Voltage versus Total Charge

60

VGS = 0 V
T

50

40

= 25°C

J

100

t, TIME (ns)

t

r

t

d(off)

t

f

t

10

d(on)

1 10 100 0 0.4 0.80.2 1.0

RG, GATE RESISTANCE (Ω)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

1000

VGS = 20 V

30

20

10

, SOURCE CURRENT (AMPS)

S

I

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus

0.6

Current

SINGLE PULSE

= 25°C

T

C

100

100 s

1 ms

10

, DRAIN CURRENT (AMPS)

D

I

1.0

R

DS(on)

Thermal Limit
Package Limit

Limit

10 ms

dc

0.1 10 1001.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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4

NTB125N02R, NTP125N02R

1

Normalized to R

0.1

EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)

r(t),

at Steady State

θ

JC

0.01

0.00001 10.10.010.0010.0001 10
t, TIME (s)

Figure 12. Thermal Response

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AA

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

STYLE 5:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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5

−T−

SEATING
PLANE

VARIABLE
CONFIGURATION
ZONE

−B−

G

NTB125N02R, NTP125N02R

PACKAGE DIMENSIONS

D2PAK

CASE 418AA−01

ISSUE O

C

E

V

4

W

A

231

S

K

W

J

3 PL

D

M

0.13 (0.005) T

M

B

U

NOTES:

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.036 0.51 0.92
E 0.045 0.055 1.14 1.40
F 0.310 −−− 7.87 −−−
G 0.100 BSC 2.54 BSC
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
M 0.280 −−− 7.11 −−−
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

M

F

VIEW W−W VIEW W−W VIEW W−W

123

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NTB125N02R/D