4. Switching characteristics are independent of operating junction temperatures.
1.5
10
2.0
4.6
6.2
V
−
−
−
dc
mV/°C
A
dc
nA
dc
V
dc
mV/°C
m
−
−
Mhos
pF
ns
nC
c
ns
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2
NTB125N02R, NTP125N02R
200
160
120
80
40
, DRAIN CURRENT (AMPS)
D
I
0
010
4.0 V
4.5 V
5.0 V
6.0 V
8.0 V
10 V
42
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
6
3.5 V
3.0 V
VGS = 2.5 V
8
200
VDS ≥ 10 V
160
120
80
40
, DRAIN CURRENT (AMPS)
D
I
0
01.60.8
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = 125°C
Figure 1. On−Region CharacteristicsFigure 2. Transfer Characteristics
0.01
0.008
0.006
0.004
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.002
DS(on)
R
VGS = 10 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
40200
ID, DRAIN CURRENT (AMPS)
16012080
Figure 3. On−Resistance versus Drain Current
and Temperature
0.01
VGS = 4.5 V
0.008
0.006
0.004
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.002
DS(on)
01601208040200
R
ID, DRAIN CURRENT (AMPS)
TJ = 125°C
TJ = 25°C
TJ = −55°C
Figure 4. On−Resistance versus Drain Current
and Temperature
TJ = −55°C
2.43.24.0
1.8
ID = 55 A
V
1.6
1.4
1.2
1.0
(NORMALIZED)
0.8
, DRAIN−TO−SOURCE RESISTANCE
0.6
DS(on)
−5050250−2575125100
R
= 4.5 V
GS
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100,000
10,000
1000
, LEAKAGE (nA)
DSS
I
100
10
150
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3
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 100°C
016128.0244.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus V oltage
20
NTB125N02R, NTP125N02R
7000
6000
C
VDS = 0 V
iss
VGS = 0 V
5000
C
4000
3000
2000
C, CAPACITANCE (pF)
rss
C
iss
C
oss
1000
C
0
10
TJ = 25°C
5
10
V
V
GS
DS
rss
155020
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance VariationFigure 8. Gate−to−Source and
1000
VDS = 10 V
I
= 40 A
D
= 10 V
V
GS
10
8.0
V
GS
6.0
Q
4.0
Q
1
2.0
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
GS
V
0243216848
T
Q
2
, TOTAL GATE CHARGE (nC)
Q
g
ID = 40 A
T
= 25°C
J
40
Drain−to−Source Voltage versus Total Charge
60
VGS = 0 V
T
50
40
= 25°C
J
100
t, TIME (ns)
t
r
t
d(off)
t
f
t
10
d(on)
11010000.40.80.21.0
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
VGS = 20 V
30
20
10
, SOURCE CURRENT (AMPS)
S
I
0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
0.6
Current
SINGLE PULSE
= 25°C
T
C
100
100 s
1 ms
10
, DRAIN CURRENT (AMPS)
D
I
1.0
R
DS(on)
Thermal Limit
Package Limit
Limit
10 ms
dc
0.1101001.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTB125N02R, NTP125N02R
1
Normalized to R
0.1
EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)
r(t),
at Steady State
θ
JC
0.01
0.0000110.10.010.0010.000110
t, TIME (s)
Figure 12. Thermal Response
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
SEATING
−T−
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MINMAXMINMAX
A 0.570 0.620 14.48 15.75
B 0.380 0.4059.66 10.28
C 0.160 0.1904.074.82
D 0.025 0.0350.640.88
F 0.142 0.1473.613.73
G 0.095 0.1052.422.66
H 0.110 0.1552.803.93
J 0.018 0.0250.460.64
K 0.500 0.562 12.70 14.27
L 0.045 0.0601.151.52
N 0.190 0.2104.835.33
Q 0.100 0.1202.543.04
R 0.080 0.1102.042.79
S 0.045 0.0551.151.39
T 0.235 0.2555.976.47
U 0.000 0.0500.001.27
V 0.045−−−1.15−−−
Z−−− 0.080−−−2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
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5
−T−
SEATING
PLANE
VARIABLE
CONFIGURATION
ZONE
−B−
G
NTB125N02R, NTP125N02R
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
C
E
V
4
W
A
231
S
K
W
J
3 PL
D
M
0.13 (0.005)T
M
B
U
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MINMAXMIN MAX
A 0.340 0.3808.649.65
B 0.380 0.4059.65 10.29
C 0.160 0.1904.064.83
D 0.020 0.0360.510.92
E 0.045 0.0551.141.40
F 0.310−−−7.87−−−
G0.100 BSC2.54 BSC
J 0.018 0.0250.460.64
K 0.090 0.1102.292.79
M 0.280−−−7.11−−−
S 0.575 0.625 14.60 15.88
V 0.045 0.0551.141.40
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
M
F
VIEW W−WVIEW W−WVIEW W−W
123
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M
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M
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NTB125N02R/D
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