ON Semiconductor NSTB1002DXV5T1G, NSTB1002DXV5T5G Service Manual

NSTB1002DXV5T1G,

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NSTB1002DXV5T5G

Preferred Devices

Dual Common
Base−Collector Bias
Resistor Transistors

NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network

The BR T (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSTB1002DXV5T1G
series, two complementary devices are housed in the SOT−553
package which is ideal for low power surface mount applications
where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch Tape and Reel

• These are Pb−Free Devices

MAXIMUM RATINGS (T

and Q2, − minus sign for Q1 (PNP) omitted)

Rating Symbo

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation TA = 25°C

Thermal Resistance −

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation TA = 25°C

Thermal Resistance −

Junction-to-Ambient

Junction and Storage Temperature TJ, T

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. FR−4 @ Minimum Pad

= 25°C unless otherwise noted, common for Q

A

Value

Q1 Q2

CBO
CEO

Symbol Max Unit

P

Derate above 25°C

R

Symbo

P

Derate above 25°C

R

−40 50 Vdc

−40 50 Vdc

−200 100 mAdc

C

357 (Note 1)

D

2.9 (Note 1)mWmW/°C

350 (Note 1) °C/W

q

JA

Max Unit

500 (Note 1)

D

4.0 (Note 1)

250 (Note 1) °C/W

q

JA

− 55 to +150 °C

stg

1

Unit

mW

mW/°C

http://onsemi.com

312

R1

Q1

45

CASE 463B

R2

Q2

R1

5

1

SOT−553

MARKING DIAGRAM

5

U9 MG

G

1

U9 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NSTB1002DXV5T1G SOT−553

(Pb−Free)

NSTB1002DXV5T5G SOT−553

(Pb−Free)

Preferred devices are recommended choices for future use
and best overall value.

4 mm pitch

4000/Tape & Ree

2 mm pitch

8000/Tape & Ree

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 0

1 Publication Order Number:

NSTB1002DXV5/D

NSTB1002DXV5T1G, NSTB1002DXV5T5G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2) V
Collector−Base Breakdown Voltage V
Emitter−Base Breakdown Voltage V
Base Cutoff Current I
Collector Cutoff Current I

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)

Collector−Emitter Saturation Voltage

V
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)

Base−Emitter Saturation Voltage

V
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product f
Output Capacitance C
Input Capacitance C
Input Impedance

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

Small−Signal Current Gain

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

Output Admittance

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

Noise Figure

(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time (V
Rise Time (I
Storage Time (V
Fall Time (I

= −3.0 Vdc, V

CC

= −10 mAdc, I

C

= −3.0 Vdc, I

CC

= I

B1

= 0.5 Vdc) t

BE

= −1.0 mAdc) t

B1

= −10 mAdc) t

C

= −1.0 mAdc) t

B2

Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

Collector-Emitter Cutoff Current

(VCB = 50 V, IB = 0)

Emitter-Base Cutoff Current

(VEB = 6.0, IC = 5.0 mA)

I

CBO

I

CEO

I

EBO

2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.

(BR)CEO
(BR)CBO
(BR)EBO

BL

CEX

h

FE

CE(sat)

BE(sat)

T

obo

ibo

h

ie

h

re

h

fe

h

oe

−40 − Vdc

−40 − Vdc

−5.0 − Vdc

− −50 nAdc

− −50 nAdc

60
80

100

60
30

−

−

−0.65

−

−

−

300

−

−

−0.25

−0.4

−0.85

−0.95

250 − MHz

− 4.5 pF

− 10.0 pF

2.0 12

0.1 10 X 10

100 400 −

3.0 60

nF − 4.0 dB

d

r

s

f

− 35

− 35

− 225

− 75

− − 100 nAdc

− − 500 nAdc

− − 0.1 mAdc

−

Vdc

Vdc

kW

−4

mmhos

ns

ns

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