ON Semiconductor NSS20300MR6T1G User Manual

NSS20300MR6T1G

20 V, 5 A, Low V

CE(sat)

PNP Transistor

ON Semiconductor’s e2PowerEdge family of low V

transistors are miniature surface mount devices featuring ultra low
saturation voltage (V

) and high current gain capability. These

CE(sat)

are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.

Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e

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PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.

MAXIMUM RATINGS (T

Rating Symbol Max Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current − Continuous I

Collector Current − Peak I

Electrostatic Discharge ESD HBM Class 3B

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation, TA = 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation

T

= 25°C

A

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Thermal Resistance,

Junction−to−Lead #1

Total Device Dissipation

(Single Pulse < 10 sec.)

Junction and Storage

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm

2. FR−4 @ 500 mm2, 2 oz copper traces.

= 25°C)

A

2

, 2 oz copper traces.

CEO

CBO

EBO

C

CM

PD (Note 1) 545

R

(Note 1)

q

JA

PD (Note 2) 1.06

R

(Note 2)

q

JA

R

(Note 1)

q

JL

R

(Note 2)

q

JL

P

Dsingle

(Note 2)

TJ, T

stg

−6.0 Vdc

−3.0 Adc

−5.0 A

1.75 W

−55 to
+150

−20 Vdc

−30 Vdc

MM Class C

4.3

230 °C/W

8.5

118 °C/W

48
40

CE(sat)

mW

mW/°C

W

mW/°C

°C/W
°C/W

°C

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20 VOLTS

5.0 AMPS

PNP LOW V

CE(sat)

EQUIVALENT R

3

BASE

CASE 318G

DEVICE MARKING

VS1 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

NSS20300MR6T1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

TRANSISTOR

DS(on)

COLLECTOR

1, 2, 5, 6

4

EMITTER

1

TSOP−6

STYLE 6

VS1 MG

G

Package

TSOP−6

(Pb−Free)

3000/Tape & Reel

78 mW

Shipping

†

© Semiconductor Components Industries, LLC, 2009

April, 2009 − Rev. 2

1 Publication Order Number:

NSS20300MR6/D

NSS20300MR6T1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(I

= −10 mAdc, IB = 0)

C

Collector− Base Breakdown Voltage

= −0.1 mAdc, IE = 0)

(I

C

Emitter− Base Breakdown Voltage

(I

= −0.1 mAdc, IC = 0)

E

Collector Cutoff Current

(V

= −20 Vdc, IE = 0)

CB

Collector−Emitter Cutoff Current

(V

= −20 Vdc)

CES

Emitter Cutoff Current

(V

= −6.0 Vdc)

EB

ON CHARACTERISTICS

DC Current Gain

(1)

(IC = −1.0 A, VCE = −1.5 V)

= −1.5 A, VCE = −2.0 V)

(I

C

(I

= −2.0 A, VCE = −2.0 V)

C

Collector− Emitter Saturation Voltage (Note 3)

(I

= −0.10 A, IB = −0.010 A)

C

= −1.0 A, IB = −0.010 A)

(I

C

(I

= −2.0 A, IB = −0.02 A)

C

Base − Emitter Saturation Voltage (Note 3)

(I

= −1A, IB = −0.010 A)

C

Base − Emitter Turn−on Voltage (Note 3)

(I

= −2.0 A, VCE = −3.0 V)

C

Cutoff Frequency

(I

= −100 mA, VCE = −5.0 V, f = 100 MHz)

C

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) C

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) C

3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.

Symbol Min Typical Max Unit

V

(BR)CEO

Vdc

−20 −

V

(BR)CBO

Vdc

−30 −

V

(BR)EBO

Vdc

−6.0 −

I

CBO

mAdc

− −0.1

I

CES

mAdc

− −0.1

I

EBO

mAdc

− −0.1

h

V

CE(sat)

V

BE(sat)

FE

100
100
100

−

−

−

230

−0.010

−0.127

−0.250

−

400

−

−0.015

−0.145

−0.320

− − −0.85

V

BE(on)

− − −0.875

f

T

MHz

100 − −

IBO

OBO

− 650 pF

− 100 pF

V

V

V

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