System Basis Chip with
Integrated LIN and Voltage
Regulator
Description
NCV7428 is a System Basis Chip (SBC) integrating functions
typically found in automotive Electronic Control Units (ECUs).
NCV7428 provides and monitors the low−voltage power supply for
the application microcontroller and other loads and includes a LIN
transceiver.
Features
• Control Logic
♦ Ensures safe power−up sequence and the correct reaction to
different supply conditions
♦ Controls mode transitions including the power management and
bus wakeup treatment
♦ Generates reset
• 3.3 V or 5 V V
Low−drop Voltage Regulator
♦ Can deliver up to 70 mA with accuracy of ±2%
♦ Supplies typically the ECU’s microcontroller
♦ Undervoltage detector with a reset output to the supplied
microcontroller
• LIN Transceiver
♦ LIN2.x and J2602 compliant
♦ TxD dominant timeout protection
♦ Transceiver mode controlled by dedicated input pin
• Protection and Monitoring Functions
♦ Thermal shutdown protection
♦ Load dump protection (45 V)
♦ LIN Bus pin protected against transients in an automotive
environment
♦ ESD protection level for LIN and V
• Wettable Flank Package for Enhanced Optical Inspection
Quality
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Automotive
• Industrial Networks
Supply depending on the Version from a
OUT
> ±8 kV
S
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8
1
SOIC−8
D SUFFIX
CASE 751AZ
MARKING DIAGRAMS
8
NV7428xx
ALYW G
G
1
A= Assembly Location
L= Wafer Lot
Y= Year
W= Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
V
S
2
EN
3
GND
4
LIN
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 17 of this data sheet.
Filtering capacitor for the battery inputrecommended >100 nF ceramic
Voltage regulator output filtering and
Master node Pull−up diode on LIN line
Master node Pull−up resistor on LIN line
Filtering capacitor on LIN line (Master node)typically 1 nFoptional; is function of the
Filtering capacitor on LIN line (Slave node)typically 100 pF – 220 pFoptional; is function of the
Pull−up resistor at RSTN pin
DescriptionValueNote
stabilization capacitor
e.g. 0.5 A / 50 V
> 1.8 mF, ESR < 7 W
1 kW nominal, ≥500 mW
recommended 10 kW nominal
required values and types
depend on the V
and the application needs
OUT
load
required only for master
LIN node
entire LIN network
entire LIN network
optional; depends on
application needs
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NCV7428
Table 3. ABSOLUTE MAXIMUM RATINGS
SymbolParameterMinMaxUnits
V
S
V
OUT
V
LIN
V
Dig_IO_inputs
V
Dig_IO_outputs
T
AMB
T
J
T
STG
V
ESD
MSLMoisture Sensitivity LevelSOIC
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Maximum DC voltage at VS pin−0.345V
Maximum voltage at V
pin−0.36V
OUT
Maximum voltage at LIN bus pin−4545V
Maximum voltage at digital input pins (TxD, EN)−0.345V
Maximum voltage at digital output pins (RxD, RSTN)−0.3V
+0.3V
OUT
Ambient temperature range−40+125°C
Junction temperature range−40+170°C
Storage temperature range−55+150°C
System ESD at pins VS, LIN as per IEC 61000−4−2: 330 W / 150 pF
≥ ±14
kV
(Verified by external test house)
Human body model at pins VS, LIN stressed towards GND with 1500 W / 100 pF≥ ±8
Human body model at all pins as per JESD22−A114 / AEC−Q100−002
Charge device model at all pins as per JESD22−C101 / AEC−Q100−011
Machine model; (200 pF; 0.75 mH; 10 W) as per JESD22−A115 / AEC−Q100−003
≥ ±4
≥ ±500
±200V
kV
kV
2
DFN
1
Lead temperature Soldering − Reflow (SMD styles only), Pb−Free (Note 1)260°C
V
−
Table 4. OPERATING RANGES
SymbolParameterMinMaxUnits
V
S
VS operating voltage for parametric operation (Note 2)5.528V
VS operating voltage for limited operation (Note 2)428V
V
OUT5
V
OUT33
I
VOUT
V
LIN
V
Dig_IO_inputs
V
Dig_IO_outputs
Regulated voltage at V
Regulated voltage at V
Current delivered by the V
Operating voltage at LIN bus pin0V
supply output for 5 V versions4.95.1V
OUT
supply output for 3.3 V versions3.2343.366V
OUT
regulator70mA
OUT
S
Operating voltage at digital input pins (TxD, EN)05.5V
Operating voltage at digital output pins (RxD, RSTN)0V
OUT
V
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
2. Below 5.5 V at V
specifications as required by SAE J2602. It is ensured by the battery monitoring circuit. Above 28 V at V
operational (LIN pin toggling) but parameters cannot be guaranteed. For higher battery voltage operation above 28 V, LIN pull−up resistor
pin in normal mode, the bus will either stay recessive or comply with the voltage level specifications and transition time
S
pin, LIN communication is
S
must be selected large enough to avoid clamping of LIN pin by voltage drop over external pull−up resistor and LIN pin min current limitation.
Table 5. THERMAL CHARACTERISTICS
RatingSymbolValueUnit
Thermal Characteristics, SOIC−8 (Note 3)
Thermal Characteristics, DFN−8 (Note 3)
3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
4. Values based on test board according to EIA/JEDEC Standard JESD51−3, signal layer with 10% trace coverage.
5. Values based on test board according to EIA/JEDEC Standard JESD51−7, signal layers with 10% trace coverage for the signal layer and
4 thermal vias connected between exposed pad and first inner Cu layer.
The characteristics defined in this section are guaranteed within the operating ranges listed in Table 4, unless stated
otherwise. All voltages are referenced to GND (Pin 3). Positive currents flow into the respective pin.
Table 6. DC CHARACTERISTICS (V
specified. Typical values are given at V
Symbol
ParameterConditionsMinTypMaxUnit
= 5.5 V to 28 V; TJ = −40°C to +150°C; Bus Load = 500 W (VS to LIN); unless otherwise
S
= 12 V and TJ = 25°C, unless otherwise specified.)
S
SUPPLY MONITORING
V
S_PORH
V
S_PORL
V
OUT_RES_5
V
OUT_RES_33
V
OUT_RES_hys5
V
OUT_RES_hys33VOUT
VS threshold for the power−up
of the circuit
VS threshold for the Shutdown
of the circuit
V
monitoring threshold
OUT
NV7428−5
V
monitoring threshold
OUT
NV7428−3
V
monitoring threshold
OUT
hysteresis for NV7428−5
monitoring threshold
hysteresis for NV7428−3
VS rising3.34V
VS falling2.23V
V
falling4.554.75V
OUT
V
falling2.973.135V
OUT
0.1V
0.06V
CURRENT CONSUMPTION
I
VS_LIN_Active_recVS
I
VS_LIN_Wakeup
I
VS_Sleep
V
REGULATOR
OUT
V
OUT_5
V
OUT_33
V
OUT_5_EMC
supply currentLIN Active, LIN bus recessive1.8mA
VS supply current (Note 8)Standby mode; LIN Wakeup,
LIN bus recessive; I
VS = 13.5 V, TJ < 105°C
VOUT
= 0 mA
VS supply current (Note 8)Sleep mode; LIN Wakeup, LIN bus
V
regulator output voltage
OUT
(Note 6)
V
regulator output voltage
OUT
(Note 6)
V
regulator output voltage
OUT
under EMC (Note 8)
recessive; V
VS = 13.5 V, TJ < 105°C
V
regulator active,
OUT
0 < I
VOUT
regulation, VS = 5.5 V to 28 V
V
regulator active,
OUT
0 < I
VOUT
regulation, V
DPI EMC test applied to LIN pin.
No bus capacitor. SOIC8 package;
off, V
OUT
OUT
< 70 mA, Static
< 70 mA, Static
= 4.5 V to 28 V
S
< 0.5 V
4.955.1V
3.2343.33.366V
4.8555.15V
2533
1218
mA
mA
(Note 7)
V
OUT_33_EMC
V
regulator output voltage
OUT
under EMC (Note 8)
DPI EMC test applied to LIN pin.
No bus capacitor. SOIC8 package;
3.2013.33.399V
(Note 7)
I
LIM_VOUT
V
DROP_VOUT
I
SINK_VOUT
C
VOUT
V
current limitationV
OUT
Drop−out voltage between V
and V
OUT
V
sink currentV
OUT
V
regulator filtering
OUT
capacitance (Note 9)
regulator active;
OUT
current flowing to V
5.5 V < VS < 40 V;
S
I
= 70 mA
VOUT
regulator active, current
OUT
flowing into the V
Equivalent series resistance < 7 W
OUT
OUT
pin
load
70120350mA
0.55V
100240400
1.810
mA
mF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. In case LIN bus capacitor of at least 82 pF is not used V
7. Tested according to: LIN Conformance Test Specification Package for LIN 2.1, October 10
OUT_5_EMC
andV
OUT_33_EMC
needsto be taken into account.
th, 2008. Verified by external test house.
8. Values based on design and characterization. Not tested in production.
9. In parallel with this capacitor any other capacitor can be placed with no limit to ESR and capacitance value
10.The voltage drop in Normal mode between LIN and V
at the switch is negligible. See Figure 1.
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
S
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5
NCV7428
Table 6. DC CHARACTERISTICS (V
specified. Typical values are given at V
= 5.5 V to 28 V; TJ = −40°C to +150°C; Bus Load = 500 W (VS to LIN); unless otherwise
S
= 12 V and TJ = 25°C, unless otherwise specified.)
S
SymbolUnitMaxTypMinConditionsParameter
LIN TRANSMITTER
V
LIN_dom_LoSup
V
LIN_dom_HiSup
V
LIN_REC
I
LIN_lim
R
slave
C
LIN
LIN dominant output voltageTxD = Low; VS = 7.3 V1.2V
LIN dominant output voltageTxD = Low; VS = 18 V2.0V
LIN recessive output voltage
Short circuit current limitationV
TxD = High; I
= VS = 18 V40200mA
LIN
= 10 mA (Note 10)
LIN
Internal Pull−up ResistanceLIN Normal or Receive−only mode203347
VS – 1.5V
S
kW
Capacitance at pin LIN (Note 8)2030pF
V
LIN Receiver
V
bus_dom
V
bus_rec
V
rec_dom
V
rec_rec
V
rec_cnt
V
rec_hys
I
LIN_off_dom
I
LIN_off_dom_wake
I
LIN_off_rec
I
LIN_no_GND
I
LIN_no_VBB
Bus voltage for Dominant state0.4V
Bus voltage for Recessive state0.6V
Receiver thresholdLIN bus going from Recessive to
0.40.6V
Dominant
Receiver thresholdLIN bus going from Dominant to
0.40.6V
Recessive
Receiver center voltage(V
Receiver hysteresisV
LIN output current,
Bus in dominant state
LIN output current,
Bus in dominant state
LIN output current,
Bus in recessive state
LIN Active Mode, Driver Off;
V
LIN Wakeup Mode;
V
Driver Off; VS < 18 V;
V
LIN current with missing GNDVS = GND = 12 V; 0 < V
LIN current with missing V
S
VS = GND = 0 V; 0 < V
rec_dom
rec_rec
= 12 V, V
S
= 12 V, V
S
< V
S
LIN
+ V
− V
< 18 V
)/20.4750.525V
rec_rec
rec_dom
0.050.175V
−1mA
= 0 V
LIN
−20−15−2
= 0 V
LIN
< 18 V−11mA
LIN
< 18 V5
LIN
1
S
S
S
S
S
S
mA
mA
mA
PIN EN
V
IL_EN
V
IH_EN
R
pulldown_EN
Low−level input voltage−0.30.8V
High−level input voltage25.5V
Pull−down resistance to GND55100185
kW
PIN TxD
V
IL_TxD
V
IH_TxD
R
pullup_TxD
I
leak_TxD
Low−level input voltage−0.30.8V
High−level input voltage25.5V
Pull−up resistance to V
OUT
Leakage currentV
TxD
= V
= 5.5 V−101
OUT
55100185
kW
mA
PIN RSTN
I
OL_RSTN
V
OL_RSTN
R
pullup_RSTN
Low−level output driving currentVS = 4 V to 28 V; V
Low−level output voltage
Pull−up resistance to V
OUT
VS = 2 V to 4 V; V
5.5 V; I
VS < 2 V; V
I
RSTN
= 100 mA
RSTN
OUT
= 100 mA
= 1 V to 5.5 V;
= 0.4 V430mA
RSTN
= 0 V to
OUT
55100185
0.1V
0.1V
OUT
OUT
kW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. In case LIN bus capacitor of at least 82 pF is not used V
7. Tested according to: LIN Conformance Test Specification Package for LIN 2.1, October 10
OUT_5_EMC
andV
OUT_33_EMC
needsto be taken into account.
th, 2008. Verified by external test house.
8. Values based on design and characterization. Not tested in production.
9. In parallel with this capacitor any other capacitor can be placed with no limit to ESR and capacitance value
10.The voltage drop in Normal mode between LIN and V
at the switch is negligible. See Figure 1.
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
S
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