ON Semiconductor NCS36000 Operating Manual

NCS36000
Passive Infrared (PIR) Detector Controller
The NCS36000 is a fully integrated mixed−signal CMOS device designed for low−cost passive infrared controlling applications. The device integrates two low−noise amplifiers and a LDO regulator to drive the sensor. The output of the amplifiers goes to a window comparator that uses internal voltage references from the regulator. The digital control circuit processes the output from the window comparator and provides the output to the OUT and LED pin.
Features
3.0 − 5.75 V Operation
−40 to 85°C
14 Pin SOIC Package
Integrated 2−Stage Amplifier
Internal LDO to Drive Sensor
Internal Oscillator with External RC
Single or Dual Pulse Detection
Direct Drive of LED and OUT
This is a Pb−Free Device
Typical Applications
Automatic Lighting (Residential and Commercial)
Automation of Doors
Motion Triggered Events (Animal photography)
14VDD
7VSS
6VREF
LDO &
Voltage References
2
www.onsemi.com
MARKING DIAGRAM
14
1
SOIC−14
D SUFFIX
CASE 751A
A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package
14
NCS36000G
AWLYWW
1
PIN CONNECTIONS
OP2_O OP2_N OP1_O OP1_N
OP1_P
VREF
VSS
1 2 3 4 5 6 7
(Top View)
14 13 12 11 10
9 8
VDD OSC MODE NC xLED_EN LED OUT
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.
5OP1_P 4OP1_N 3OP1_O 2OP2_N 1OP2_O
13OSC
Amplifier
Circuit
System
Oscillator
Comparator
Figure 1. Simplified Block Diagram
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 3
Window
12 MODE
Digital
2
Control
Circuit
1 Publication Order Number:
10 xLED_EN
9 LED 8 OUT
NCS36000/D
NCS36000
PIN FUNCTION DESCRIPTION
Pin No. Pin Name Description
1 OP2_O Output of second amplifier 2 OP2_N Inverting input of second amplifier
3 OP1_O Output of first amplifier 4 OP1_N Inverting input of first amplifier 5 OP1_P Non−inverting input of first amplifier 6 VREF Regulated voltage reference to drive sensor 7 VSS Analog ground reference. 8 OUT CMOS output (10 mA Max)
9 LED CMOS output to drive LED (10mA Max) 10 xLED_EN Active low LED enable input 11 NC No Connect 12 MODE Pin used to select pulse count mode 13 OSC External oscillator to control clock frequency 14 VDD Analog power supply
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage Range (Note 1) V Output Voltage Range V
Maximum Junction Temperature T
J(max)
Storage Temperature Range T ESD Capability, Human Body Model (Note 2) ESD ESD Capability, Machine Model (Note 2) ESD Lead Temperature Soldering
T
Reflow (SMD Styles Only), Pb−Free Versions (Note 3)
in
out
STG
HBM
MM
SLD
−0.3 to 6.0 V
−0.3 to 6.0 V or (Vin + 0.3), whichever is lower
140 °C
−65 to 150 °C 2 kV
200 V 260 °C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating: v150 mA per JEDEC standard: JESD78
3. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics, DFN6, 3x3.3 mm (Note 4)
Thermal Resistance, Junction−to−Air (Note 5) Thermal Reference, Junction−to−Lead2 (Note 5)
R
q
JA
R
Y
JL
Thermal Characteristics, TSOP−5 (Note 4)
Thermal Resistance, Junction−to−Air (Note 5)
4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
5. Values based on copper area of 645 mm
2
(or 1 in2) of 1 oz copper thickness and FR4 PCB substrate.
R
q
JA
Will be Completed once
package and power
consumption is finalized
See note above.
°C/W
°C/W
www.onsemi.com
2
NCS36000
OPERATING RANGES (Note 6)
Rating
Analog Power Supply V Analog Ground Reference V
Supply Current (Standby, No Loads) I Digital Inputs (MODE)
Digital Output (OUT, LED) Push−Pull Output (10 mA Load)
OP1_P (Sensor Input) (Note 7) AMP 1 IN 0.1 VDD −
Ambient Temperature T
6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
7. Guaranteed By Design (Non−tested parameter).
Symbol Min Typ Max Unit
DD
SS
DD
V
ih
V
il
V
oh
V
ol
A
3.0 5.0 5.75 V
0.0 0.1 V
0.7 * V
DD
V
DD
VDD +
VSS VDD *
0.67 * V
DD
VSS VDD *
−40 85 °C
170m
0.3
0.28 V
DD
0.3
1.1
A V
V
V
ELECTRICAL CHARACTERISTICS V
Parameter
= 1 V, Cin = 100 nF, C
in
Test Conditions Symbol Min Typ Max Unit
= 100 nF, for typical values TA = 25°C; unless otherwise noted.
out
LDO Voltage Reference
Output Voltage
VDD = 3.0 V to 5.75 V VREF 2.6 2.7 2.8 V Supply Current VDD = 3.0 V to 5.75V IREF 20 50 Comparator High Trip Level V Comparator Low Trip Level V Reference voltage for non−inverting input of
second amplifier
h l
V
m
2.413 2.5 2.588 V
1.641 1.7 1.760 V
2.007 2.1 2.174 V
System Oscillator
Oscillator Frequency
VDD = 5.0 V
= 220 kW
R
3
C2 = 100 nF
OSC 62.5 Hz
Window Comparator
Lower Trip Threshold
See Vl above
Higher Trip Threshold See Vh above
Differential Amplifiers (Amplifier Circuit)
DC Gain
VDD = 5.0 V (Note 8) Av 80 dB
Common−mode Input Range VDD = 5.0 V (Note 8) CMIR 0.1 VDD −
1.1 Power Supply Rejection Ratio VDD = 5.0 V (Note 8) PSRR 60 dB Output Drive Current VDD = 5.0 V (Note 8) I
out1
25
POR
POR Release Voltage
V
POR
1.35 2.85 V
8. Guaranteed By Design (Non−tested parameter).
mA
V
mA
www.onsemi.com
3
Loading...
+ 5 hidden pages