ON Semiconductor MJE15032, MJE15032G, MJE15033, MJE15033G Service Manual
MJE15032 (NPN),
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s
MJE15033 (PNP)
Preferred Devices
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
Features
• DC Current Gain Specified to 5.0 Amperes
hFE= 70 (Min) @ IC = 0.5 Adc
= 10 (Min) @ IC = 2.0 Adc
• Collector−Emitter Sustaining Voltage −
V
CEO(sus)
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO−220AB Compact Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model C
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25_C
ООООООООО
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
ООООООООО
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
ООООООООО
Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= 250 Vdc (Min) − MJE15032, MJE15033
Human Body Model 3B
Rating
− Peak
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
ÎÎ
P
D
TJ, T
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Symbol
R
q
JC
R
q
JA
ÎÎ
stg
Value
250
250
ÎÎ
0.40
0.016
–65 to
ÎÎ
+150
Max
62.5
ÎÎ
5.0
8.0
16
2.0
50
2.0
2.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
Î
W/_C
W
W/_C
_C
Î
Unit
_C/W
_C/W
Î
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8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
A YW
TO−220
CASE 221A
STYLE 1
1
2
3
MJE1503x= Specific Device Code
x = 2 or 3
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Package
ORDERING INFORMATION
Device Package Shipping
MJE15032 TO−220
MJE15032G TO−220
MJE15033 TO−220 50 Units/Rail
MJE15033G TO−220
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Pb−Free)
(Pb−Free)
MJE1503xG
AKA
50 Units/Rail
50 Units/Rail
50 Units/Rail
†
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MJE15032/D
MJE15032 (NPN), MJE15033 (PNP)
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
= 10 mAdc, IB = 0)
(I
C
ООООООООООООООООООООО
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
ООООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
ООООООООООООООООООООО
(IC = 1.0 Adc, VCE = 5.0 Vdc)
ООООООООООООООООООООО
(IC = 2.0 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
ООООООООООООООООООООО
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
ООООООООООООООООООООО
(IC = 500 mAdc, VCE = 10 Vdc, f
= 1.0 MHz)
test
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• f
test
.
Symbol
V
CEO(sus)
ÎÎ
I
CBO
I
EBO
ÎÎ
h
FE
ÎÎ
ÎÎ
V
CE(sat)
ÎÎ
V
BE(on)
f
T
ÎÎ
Min
250
ÎÎ
−
−
ÎÎ
70
ÎÎ
50
ÎÎ
10
−
ÎÎ
−
30
ÎÎ
Max
−
Î
10
10
Î
−
Î
−
Î
−
0.5
Î
1.0
−
Î
Unit
Vdc
Î
mAdc
mAdc
Î
Î
Î
Vdc
Î
Vdc
MHz
Î
−
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