ON Semiconductor MJE15028, MJE15030, MJE15031, MJE15029 Service Manual
MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
• DC Current Gain Specified to 4.0 Amperes
hFE= 40 (Min) @ IC = 3.0 Adc
= 20 (Min) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage −
V
CEO(sus)
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO−220AB Compact Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage V
Collector Current − Continuous
Base Current I
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031
Rating Symbol Value Unit
V
MJE15028, MJE15029
MJE15030, MJE15031
MJE15028, MJE15029
MJE15030, MJE15031
− Peak
Characteristics Symbol Max Unit
CEO
V
I
CM
P
P
TJ, T
R
R
120
150
CB
EB
I
C
B
D
D
stg
q
JC
q
JA
120
150
5.0 Vdc
8.0
16
2.0 Adc
50
0.40
2.0
0.016
−65 to
+150
2.5
62.5
Vdc
Vdc
Adc
W
W/_C
W
W/_C
_C
_C/W
_C/W
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8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
TO−220AB
CASE 221A−09
2
3
MARKING DIAGRAM
MJE150xx = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
STYLE 11
MJE150xxG
AY WW
x = 28, 29, 30, or 31
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
1 Publication Order Number:
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
MJE15028/D
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
= 10 mAdc, IB = 0) MJE15028, MJE15029
(I
C
ООООООООООООООООООО
MJE15030, MJE15031
Collector Cutoff Current
ООООООООООООООООООО
(VCE = 120 Vdc, IB = 0) MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0) MJE15030, MJE15031
ООООООООООООООООООО
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0) MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0) MJE15030, MJE15031
ООООООООООООООООООО
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ООООООООООООООООООО
ON CHARACTERISTICS (Note 1)
DC Current Gain
ООООООООООООООООООО
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
ООООООООООООООООООО
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
ООООООООООООООООООО
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
ООООООООООООООООООО
(NPN to PNP)
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
ООООООООООООООООООО
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, f
ООООООООООООООООООО
= 10 MHz)
test
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• f
test
.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
ÎÎÎ
h
FE
ÎÎÎ
V
CE(sat)
ÎÎÎ
V
BE(on)
f
T
ÎÎÎ
Min
120
ÎÎ
150
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
ÎÎ
40
40
ÎÎ
40
ÎÎ
20
Max
−
Î
−
Î
0.1
0.1
Î
10
Î
10
10
Î
Î
−
−
Î
−
Î
−
Typ
30
2
3
−
−
0.5
Î
1.0
−
Î
ÎÎÎÎ
ÎÎ
ÎÎ
Unit
Vdc
ÎÎ
mAdc
ÎÎ
ÎÎ
mAdc
ÎÎ
mAdc
ÎÎ
−
ÎÎ
ÎÎ
ÎÎ
ÎÎ
Vdc
ÎÎ
Vdc
MHz
ÎÎ
, POWER DISSIPATION (WATTS)
D
P
3.0
2.0
1.0
T
T
C
A
60
40
T
C
20
0
0
0
40 60 100 120 160
20
T
A
80 140
T, TEMPERATURE (°C)
Figure 1. Power Derating
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