ON Semiconductor MJD122, MJD127 Service Manual

MJD122 (NPN)
MJD127 (PNP)

Preferred Device

Complementary Darlington
Power Transistor

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: h

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

= 2500 (Typ) @ IC = 4.0 Adc

FE

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SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

COLLECTOR 2,4

BASE

1

EMITTER 3

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

Base Current I

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation (Note 1)

@ T

= 25°C

A

Derate above 25°C

Operating and Storage Junction

Temperature Range

− Peak

TJ, T

CEO

CB

EB

I

C

B

P

D

P

D

stg

100 Vdc

100 Vdc

5 Vdc

8

16

120 mAdc

20

0.16

1.75

0.014

−65 to +150 °C

Adc

W

W/°C

W

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance

Junction−to−Case

Thermal Resistance

Junction−to−Ambient (Note1)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.

R

q

JC

R

q

JA

6.25 °C/W

71.4 °C/W

4

DPAK

CASE 369C

2

1

3

STYLE 1

Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package

MARKING
DIAGRAM

YWW

J12xG

ORDERING INFORMATION

Device Package Shipping

MJD122 DPAK 75 Units/Rail

MJD122G DPAK

MJD122T4 DPAK 2500/Tape & Reel

MJD122T4G DPAK

MJD127

MJD127G DPAK

MJD127T4

MJD127T4G DPAK

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

(Pb−Free)

(Pb−Free)

DPAK

(Pb−Free)

DPAK

(Pb−Free)

75 Units/Rail

2500/Tape & Reel

75 Units/Rail

75 Units/Rail

2500/Tape & Reel

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 8

1 Publication Order Number:

MJD122/D

MJD122 (NPN)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 30 mAdc, IB = 0)

(I

C

Collector Cutoff Current

(V

= 50 Vdc, IB = 0)

CE

Collector Cutoff Current

(V

= 100 Vdc, IE = 0)

CB

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

BE

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 4 Vdc)

= 8 Adc, VCE = 4 Vdc)

(I

C

Collector−Emitter Saturation Voltage

(I

= 4 Adc, IB = 16 mAdc)

C

= 8 Adc, IB = 80 mAdc)

(I

C

Base−Emitter Saturation Voltage (Note 2)

(I

= 8 Adc, IB = 80 mAdc)

C

Base−Emitter On Voltage

(I

= 4 Adc, VCE = 4 Vdc)

C

= 25_C unless otherwise noted)

C

Symbol Min Max Unit

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

100 − Vdc

− 10

− 10

mAdc

mAdc

− 2 mAdc

1000

100

12,000

−

Vdc

−

−

2
4

− 4.5 Vdc

− 2.8 Vdc

−

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJD127

CB

Small−Signal Current Gain

(I

= 3 Adc, VCE = 4 Vdc, f = 1 kHz)

C

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TAT

C

25

2.5

20

2

15

1.5

10

1

5

0.5

, POWER DISSIPATION (WATTS)

D

P

T

C

TA

SURFACE

MOUNT

MJD122

|hfe| 4 − MHz

C

ob

h

fe

−

−

300
200

300 − −

pF

0

0

25

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 1. Power Derating

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2

MJD122 (NPN)

0

TYPICAL ELECTRICAL CHARACTERISTICS

PNP MJD127 NPN MJD122

20,000

10,000

7000
5000

TJ = 150°C

3000

2000

25°C

1000

, DC CURRENT GAIN

FE

700

h

500

-55°C

300
200

0.1 0.7

0.2

0.3 7 10

3

2.6
IC = 2 A

2.2

0.5 1

23 5

IC, COLLECTOR CURRENT (AMP)

4 A

6 A

20,000

VCE = 4 V

10,000

5000

3000
2000

1000

, DC CURRENT GAIN

FE

h

500

300
200

Figure 2. DC Current Gain

TJ = 25°C

2.6

2.2

TJ = 150°C

25°C

-55°C

0.1 0.7

0.2

0.5 1

0.3 7 10

IC, COLLECTOR CURRENT (AMP)

3

IC = 2 A

4 A

VCE = 4 V

23 5

TJ = 25°C

6 A

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

0.3 0.5 1 735

0.7

2

, BASE CURRENT (mA)

I

B

3

TJ = 25°C

2.5

2

VBE @ VCE = 4 V

1.5

V, VOLTAGE (VOLTS)

V

@ IC/IB = 250

BE(sat)

1

V

@ IC/IB = 250

0.5

0.2 30.1 0.70.3 1 5

CE(sat)

0.5 7210

, COLLECTOR CURRENT (AMP)

I

C

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

10 20 30

0.3 0.5 1 7352

0.7

Figure 3. Collector Saturation Region

3

2.5

2

V

@ IC/IB = 250

BE(sat)

1.5

V, VOLTAGE (VOLTS)

1

0.5

VBE @ VCE = 4 V

V

@ IC/IB = 250

CE(sat)

0.2 30.1 0.70.3 1 5

Figure 4. “On” Voltages

, BASE CURRENT (mA)

I

B

TJ = 25°C

0.5 721

, COLLECTOR CURRENT (AMP)

I

C

10 20 30

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