ON Semiconductor MJD122, MJD127 Service Manual

MJD122 (NPN)
MJD127 (PNP)

Preferred Device

Complementary Darlington
Power Transistor

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: h

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

= 2500 (Typ) @ IC = 4.0 Adc

FE

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SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

COLLECTOR 2,4

BASE

1

EMITTER 3

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

Base Current I

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation (Note 1)

@ T

= 25°C

A

Derate above 25°C

Operating and Storage Junction

Temperature Range

− Peak

TJ, T

CEO

CB

EB

I

C

B

P

D

P

D

stg

100 Vdc

100 Vdc

5 Vdc

8

16

120 mAdc

20

0.16

1.75

0.014

−65 to +150 °C

Adc

W

W/°C

W

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance

Junction−to−Case

Thermal Resistance

Junction−to−Ambient (Note1)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.

R

q

JC

R

q

JA

6.25 °C/W

71.4 °C/W

4

DPAK

CASE 369C

2

1

3

STYLE 1

Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package

MARKING
DIAGRAM

YWW

J12xG

ORDERING INFORMATION

Device Package Shipping

MJD122 DPAK 75 Units/Rail

MJD122G DPAK

MJD122T4 DPAK 2500/Tape & Reel

MJD122T4G DPAK

MJD127

MJD127G DPAK

MJD127T4

MJD127T4G DPAK

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

(Pb−Free)

(Pb−Free)

DPAK

(Pb−Free)

DPAK

(Pb−Free)

75 Units/Rail

2500/Tape & Reel

75 Units/Rail

75 Units/Rail

2500/Tape & Reel

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 8

1 Publication Order Number:

MJD122/D

MJD122 (NPN)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 30 mAdc, IB = 0)

(I

C

Collector Cutoff Current

(V

= 50 Vdc, IB = 0)

CE

Collector Cutoff Current

(V

= 100 Vdc, IE = 0)

CB

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

BE

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 4 Vdc)

= 8 Adc, VCE = 4 Vdc)

(I

C

Collector−Emitter Saturation Voltage

(I

= 4 Adc, IB = 16 mAdc)

C

= 8 Adc, IB = 80 mAdc)

(I

C

Base−Emitter Saturation Voltage (Note 2)

(I

= 8 Adc, IB = 80 mAdc)

C

Base−Emitter On Voltage

(I

= 4 Adc, VCE = 4 Vdc)

C

= 25_C unless otherwise noted)

C

Symbol Min Max Unit

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

100 − Vdc

− 10

− 10

mAdc

mAdc

− 2 mAdc

1000

100

12,000

−

Vdc

−

−

2
4

− 4.5 Vdc

− 2.8 Vdc

−

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJD127

CB

Small−Signal Current Gain

(I

= 3 Adc, VCE = 4 Vdc, f = 1 kHz)

C

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TAT

C

25

2.5

20

2

15

1.5

10

1

5

0.5

, POWER DISSIPATION (WATTS)

D

P

T

C

TA

SURFACE

MOUNT

MJD122

|hfe| 4 − MHz

C

ob

h

fe

−

−

300
200

300 − −

pF

0

0

25

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 1. Power Derating

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2

MJD122 (NPN)

0

TYPICAL ELECTRICAL CHARACTERISTICS

PNP MJD127 NPN MJD122

20,000

10,000

7000
5000

TJ = 150°C

3000

2000

25°C

1000

, DC CURRENT GAIN

FE

700

h

500

-55°C

300
200

0.1 0.7

0.2

0.3 7 10

3

2.6
IC = 2 A

2.2

0.5 1

23 5

IC, COLLECTOR CURRENT (AMP)

4 A

6 A

20,000

VCE = 4 V

10,000

5000

3000
2000

1000

, DC CURRENT GAIN

FE

h

500

300
200

Figure 2. DC Current Gain

TJ = 25°C

2.6

2.2

TJ = 150°C

25°C

-55°C

0.1 0.7

0.2

0.5 1

0.3 7 10

IC, COLLECTOR CURRENT (AMP)

3

IC = 2 A

4 A

VCE = 4 V

23 5

TJ = 25°C

6 A

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

0.3 0.5 1 735

0.7

2

, BASE CURRENT (mA)

I

B

3

TJ = 25°C

2.5

2

VBE @ VCE = 4 V

1.5

V, VOLTAGE (VOLTS)

V

@ IC/IB = 250

BE(sat)

1

V

@ IC/IB = 250

0.5

0.2 30.1 0.70.3 1 5

CE(sat)

0.5 7210

, COLLECTOR CURRENT (AMP)

I

C

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

10 20 30

0.3 0.5 1 7352

0.7

Figure 3. Collector Saturation Region

3

2.5

2

V

@ IC/IB = 250

BE(sat)

1.5

V, VOLTAGE (VOLTS)

1

0.5

VBE @ VCE = 4 V

V

@ IC/IB = 250

CE(sat)

0.2 30.1 0.70.3 1 5

Figure 4. “On” Voltages

, BASE CURRENT (mA)

I

B

TJ = 25°C

0.5 721

, COLLECTOR CURRENT (AMP)

I

C

10 20 30

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3

MJD122 (NPN)

TYPICAL ELECTRICAL CHARACTERISTICS

+5

+4

+3

+2

+1

0

-1

-2

-3

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4

V

-5

5

10

4

10

3

10

PNP MJD127

*IC/IB ≤ h

qVC for V

qVB for V

0.1

0.2

REVERSE

VCE = 30 V

FE/3

25°C to 150°C

CE(sat)

-55°C to 25°C

25°C to 150°C

BE

0.50.3 75

123 10

IC, COLLECTOR CURRENT (AMP)

FORWARD

NPN MJD122

+5

*IC/IB ≤ h

+4

+3

+2

+1

0

-1

-2

-55°C to 25°C

-3

qVB for V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4

V

-5

BE

0.20.1 1 2 30.50.3 75

Figure 5. Temperature Coefficients

5

10

REVERSE

4

10

3

10

VCE = 30 V

FE/3

-55°C to 25°C

*qVC for V

CE(sat)

25°C to 150°C

0.7 10

, COLLECTOR CURRENT (AMP)

I

C

FORWARD

25°C to 150°C

-55°C to 25°C

2

10

TJ = 150°C

1

10

, COLLECTOR CURRENT (A)μI

C

10

-1

10

+0.6 +0.2 -0.8 -1 -1.2 -1.4

100°C

0

25°C

0+0.4

-0.2 -0.4 -0.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 6. Collector Cut−Off Region

10,000

5000
3000

2000

1000

, SMALL-SIGNAL CURRENT GAIN

fe

h

500
300

200

100

50
30

20

10

1

210

TC = 25°C
V

= 4 Vdc

CE

= 3 Adc

I

C

PNP
NPN

55020 100

f, FREQUENCY (kHz)

200 500 1000

2

10

TJ = 150°C

1

10

, COLLECTOR CURRENT (A)μI

C

0

10

-1

10

100°C

25°C

0-0.4 +0.2 +0.4 +0.6-0.6 -0.2 +0.8 +1 +1.2 +1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

300

200

C

ob

100

70

C, CAPACITANCE (pF)

50

PNP

C

ib

NPN

30

0.1 2 10 50

1 5 20 100

0.50.2

VR, REVERSE VOLTAGE (VOLTS)

TJ = 25°C

Figure 7. Small−Signal Current Gain

Figure 8. Capacitance

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4

MJD122 (NPN)

0

R

& RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

B

D

, MUST BE FAST RECOVERY TYPE, e.g.:

1

1N5825 USED ABOVE I
MSD6100 USED BELOW I

V

2

PPROX

≈ 100 mA

B

≈ 100 mA

B

R

B

+8 V

D

51

0

V

1

PPROX

-12 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1%

25 ms

FOR t
AND V

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

1

+ 4 V

AND tr, D1 IS DISCONNECTED

d

= 0

2

Figure 9. Switching Times Test Circuit Figure 10. Switching Times

1

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.2

0.1

0.05

0.01

SINGLE PULSE

0.01

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

≈ 8 k

TUT

V

CC

-30 V

R

C

SCOPE

≈ 120

t, TIME OR PULSE WIDTH (ms)

5

t

s

3
2

1

0.7

0.5

t, TIME (s)μ

0.3

0.2
VCC = 30 V

I

= 250

C/IB

R

q

JC(t)

R

q

JC

0.1

0.07

0.05

= r(t) R

= 6.25°C/W

= I

I

B1

B2

TJ = 25°C

0.1 0.5 30.3

0.2

q

JC

, COLLECTOR CURRENT (AMP)

I

C

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

1

(pk) qJC(t)

PNP
NPN

td @ V

BE(off)

0.7 1

P

(pk)

DUTY CYCLE, D = t1/t

t

f

= 0 V

t

1

t

r

10752

t

2

2

100

20
15
10

5
3

2

1

0.5

0.3

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.05

0.03

0.02

500m

σ

TJ = 150°C

1ms

5ms

BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED V

5

321

CEO

10 507

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Maximum Forward Bias

Safe Operating rea

Figure 11. Thermal Response

100m

σ

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

variable depending on conditions. Second breakdown pulse

dc

limits are valid for duty cycles to 10% provided T
< 150_C. T
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than

3020 70

100

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the limitations imposed by second breakdown.

5

There are two limitations on the power handling ability of

− V

C

CE

The data of Figure 12 is based on T

may be calculated from the data in

J(pk)

= 150_C; TC is

J(pk)

J(pk)

MJD122 (NPN)

PNP

BASE

COLLECTOR

≈ 8 k ≈ 120

EMITTER

Figure 13. Darlington Schematic

NPN

BASE

COLLECTOR

≈ 8 k ≈ 120

EMITTER

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6

MJD122 (NPN)

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O

NOTES:

SEATING

−T−

PLANE

B

V

S

R

4

A

123

K

F

L

D

2 PL

G

0.13 (0.005) T

C

E

Z

U

J

H

M

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88

E 0.018 0.023 0.46 0.58

F 0.037 0.045 0.94 1.14
G 0.180 BSC 4.58 BSC
H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89

L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45

S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−

V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

PUBLICATION ORDERING INFORMATION

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Sales Representative

MJD122/D