ON Semiconductor MJ21195, MJ21195G, MJ21196, MJ21196G Service Manual

MJ21195 − PNP MJ21196 − NPN

Preferred Devices

Silicon Power Transistors

The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

• Excellent Gain Linearity

• High SOA: 3 A, 80 V, 1 Sec

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V Collector−Base Voltage V Emitter−Base Voltage V Collector−Emitter Voltage − 1. 5V V Collector Current − Continuous

− Peak (Note 1) Base Current − Continuous I Total Device Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%.

= 25 Min @ IC = 8 Adc

CEO CBO EBO CEX

TJ, T

stg

250 Vdc 400 Vdc

5 Vdc

400 Vdc

16 30

5 Adc

250

1.43

−65 to +200

0.7

Adc

W/_C

_C/W

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16 AMPERES

COMPLEMENTARY SILICON-

POWER TRANSISTORS 250 VOLTS, 250 WATTS

TO−204AA (TO−3)

CASE 1−07

MARKING DIAGRAM

MJ2119xG

AYWW

MEX

MJ2119x = Device Code

x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

February, 2006 − Rev. 4

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MJ21195 TO−204 100 Units / Tray MJ21195G TO−204

MJ21196 TO−204 100 Units / Tray MJ21196G TO−204

Preferred devices are recommended choices for future use and best overall value.

(Pb−Free)

100 Units / Tray

MJ21195/D

MJ21195 − PNP MJ21196 − NPN

ELECTRICAL CHARACTERISTICS (T

= 25°C ± 5°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 100 mAdc, IB = 0)

Collector Cutoff Current

= 200 Vdc, IB = 0)

Emitter Cutoff Current

= 5 Vdc, IC = 0)

Collector Cutoff Current

= 250 Vdc, V

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

= 50 Vdc, t = 1 s (non−repetitive)

= 80 Vdc, t = 1 s (non−repetitive)

ON CHARACTERISTICS

DC Current Gain

= 8 Adc, VCE = 5 Vdc)

= 16 Adc, VCE = 5 Vdc)

Base−Emitter On Voltage

= 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage

= 8 Adc, IB = 0.8 Adc)

= 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMS

unmatched

(Matched pair h

= 50 @ 5 A/5 V) h

matched

Current Gain Bandwidth Product

= 1 Adc, VCE = 10 Vdc, f

= 1 MHz)

test

Output Capacitance

= 10 Vdc, IE = 0, f

= 1 MHz)

test

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

Symbol Min Typical Max Unit

CEO(sus)

CEO

EBO

CEX

S/b

BE(on)

CE(sat)

250 − − Vdc

− − 100

mAdc

Adc

2.5

−

75 −

−

− − 2.2 Vdc

Vdc

−

0.8

0.08

1.4 4

−

4 − − MHz

− − 500 pF

PNP MJ21195

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

f, CURRENT BANDWIDTH PRODUCT (MHz)

0.1 1.0 10

TJ = 25°C f

= 1 MHz

test

VCE = 10 V

5 V

IC, COLLECTOR CURRENT (AMPS)

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5 TJ = 25°C

2.0 f

= 1 MHz

test

1.5

f, CURRENT BANDWIDTH PRODUCT (MHz)

1.0

0.1 1.0 10

NPN MJ21196

10 V

VCE = 5 V

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product

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1000

MJ21195 − PNP MJ21196 − NPN

TYPICAL CHARACTERISTICS

PNP MJ21195 NPN MJ21196

1000

, DC CURRENT GAIN

1000

, DC CURRENT GAIN

100

VCE = 20 V

TJ = 100°C 25°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

VCE = 20 V

100101.00.1

TJ = 100°C 25°C

−25 °C

, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJ21195

TJ = 100°C 25°C

−25 °C

, COLLECTOR CURRENT (AMPS)

1000

100

, DC CURRENT GAIN

VCE = 5 V

100101.00.1

NPN MJ21196

TJ = 100°C

25°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

100101.00.1

, COLLECTOR CURRENT (A)

PNP MJ21195

5.0

5.0010152025 , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

IB = 2 A

1.5 A

1 A

0.5 A

TJ = 25°C

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NPN MJ21196

, COLLECTOR CURRENT (A) I

5.0

5.0010152025

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

IB = 2 A

1.5 A

1 A

0.5 A

TJ = 25°C

Figure 8. Typical Output Characteristics

TYPICAL CHARACTERISTICS

3.0

2.5

2.0

TJ = 25°C I

= 10

C/IB

MJ21195 − PNP MJ21196 − NPN

PNP MJ21195 NPN MJ21196

1.6 TJ = 25°C

1.4

1.2

1.0

C/IB

= 10

BE(sat)

SATURATION VOLTAGE (VOLTS)

, BASE−EMITTER VOLTAGE (VOLTS)

BE(on)

1.5

1.0

0.5

1.0

0.1

0.8

BE(sat)

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

100101.00.1

Figure 9. Typical Saturation Voltages

SATURATION VOLTAGE (VOLTS)

0.6

0.4

0.2

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Saturation Voltages

CE(sat)

100101.00.1

PNP MJ21195 NPN MJ21196

TJ = 25°C

VCE = 5 V (DASHED)

IC, COLLECTOR CURRENT (AMPS)

VCE = 20 V (SOLID)

100101.00.1

, BASE−EMITTER VOLTAGE (VOLTS)

BE(on)

1.0

0.1

TJ = 25°C

VCE = 5 V (DASHED)

VCE = 20 V (SOLID)

100101.00.1

IC, COLLECTOR CURRENT (AMPS)

100

, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage

10 ms

1 sec

250 ms

1.0

0.1

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

50 ms

100101.0 1000

Figure 13. Active Region Safe Operating Area

ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

T temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

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Figure 12. T ypical Base−Emitter Voltage

There are two limitations on the power handling

− VCE limits of the transistor that must be

The data of Figure 13 is based on T

is variable depending on conditions. At high case

J(pk)

= 200°C;

MJ21195 − PNP MJ21196 − NPN

10000

1000

C, CAPACITANCE (pF)

100

TJ = 25°C f

= 1 MHz

test

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJ21195 Typical Capacitance

1.2

1.1

1.0

0.9

100101.00.1

10000

1000

C, CAPACITANCE (pF)

100

TJ = 25°C f

= 1 MHz

test

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJ21196 Typical Capacitance

100101.00.1

0.8

, TOTAL HARMONIC

DISTORTION (%)

0.7

0.6

Figure 16. Typical Total Harmonic Distortion

AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC

DISTORTION

ANALYZER

FREQUENCY (Hz)

SOURCE

AMPLIFIER

50 W

10000010000100010010

+50 V

DUT

0.5 W

8.0 W

−50 V

Figure 17. Total Harmonic Distortion Test Circuit

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MJ21195 − PNP MJ21196 − NPN

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

2 PL

0.13 (0.005) Y

−T−

−Y−

SEATING PLANE

−Q−

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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For additional information, please contact your local Sales Representative.

MJ21195/D

ON Semiconductor MJ21195, MJ21195G, MJ21196, MJ21196G Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual