ON Semiconductor MJ21195, MJ21195G, MJ21196, MJ21196G Service Manual

MJ21195 − PNP
MJ21196 − NPN

Preferred Devices

Silicon Power Transistors

The MJ21195 and MJ21196 utilize Perforated Emitter technology
and are specifically designed for high power audio output, disk head
positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

• Excellent Gain Linearity

• High SOA: 3 A, 80 V, 1 Sec

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1. 5V V
Collector Current − Continuous

− Peak (Note 1)
Base Current − Continuous I
Total Device Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%.

= 25 Min @ IC = 8 Adc

FE

CEO
CBO
EBO
CEX

I

C

B

P

D

TJ, T

stg

R

q

JC

250 Vdc
400 Vdc

5 Vdc

400 Vdc

16
30

5 Adc

250

1.43

−65 to +200

0.7

Adc

W

W/_C

_C

_C/W

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16 AMPERES

COMPLEMENTARY SILICON-

POWER TRANSISTORS
250 VOLTS, 250 WATTS

TO−204AA (TO−3)

CASE 1−07

MARKING DIAGRAM

MJ2119xG

AYWW

MEX

MJ2119x = Device Code

x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 4

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MJ21195 TO−204 100 Units / Tray
MJ21195G TO−204

MJ21196 TO−204 100 Units / Tray
MJ21196G TO−204

Preferred devices are recommended choices for future use
and best overall value.

(Pb−Free)

(Pb−Free)

100 Units / Tray

100 Units / Tray

MJ21195/D

MJ21195 − PNP MJ21196 − NPN

ELECTRICAL CHARACTERISTICS (T

= 25°C ± 5°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I

= 100 mAdc, IB = 0)

C

Collector Cutoff Current

= 200 Vdc, IB = 0)

(V

CE

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

CE

Collector Cutoff Current

(V

= 250 Vdc, V

CE

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

= 50 Vdc, t = 1 s (non−repetitive)

CE

= 80 Vdc, t = 1 s (non−repetitive)

(V

CE

ON CHARACTERISTICS

DC Current Gain

(I

= 8 Adc, VCE = 5 Vdc)

C

= 16 Adc, VCE = 5 Vdc)

(I

C

Base−Emitter On Voltage

(I

= 8 Adc, VCE = 5 Vdc)

C

Collector−Emitter Saturation Voltage

(I

= 8 Adc, IB = 0.8 Adc)

C

= 16 Adc, IB = 3.2 Adc)

(I

C

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMS

h

FE

unmatched

(Matched pair h

= 50 @ 5 A/5 V) h

FE

FE

matched

Current Gain Bandwidth Product

(I

= 1 Adc, VCE = 10 Vdc, f

C

= 1 MHz)

test

Output Capacitance

(V

= 10 Vdc, IE = 0, f

CB

= 1 MHz)

test

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

Symbol Min Typical Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

HD

f

C

T

ob

250 − − Vdc

− − 100

− − 100

− − 100

mAdc

mAdc

mAdc

Adc

5

2.5

−

−

−

−

75 −

25

8

−

−

− − 2.2 Vdc

Vdc

−

−

−

−

−

−

0.8

0.08

1.4
4

−

−

4 − − MHz

− − 500 pF

%

PNP MJ21195

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

T

f, CURRENT BANDWIDTH PRODUCT (MHz)

0

0.1 1.0 10

TJ = 25°C
f

= 1 MHz

test

VCE = 10 V

5 V

IC, COLLECTOR CURRENT (AMPS)

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5
TJ = 25°C

2.0
f

= 1 MHz

test

1.5

T

f, CURRENT BANDWIDTH PRODUCT (MHz)

1.0

0.1 1.0 10

NPN MJ21196

10 V

VCE = 5 V

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product

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