ON Semiconductor MJ21193, MJ21193G, MJ21194, MJ21194G Service Manual

MJ21193, MJ21194

Preferred Device

Silicon Power Transistors

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

= 25 Min @ IC = 8 Adc

FE

• Excellent Gain Linearity

• High SOA: 2.5 A, 80 V, 1 Second

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector−Emitter Voltage − 1.5 V V

Collector Current − Continuous

Peak (Note 1)

Base Current − Continuous I

Total Power Dissipation @ TC = 25°C
Derate Above 25°C

Operating and Storage Junction
Temperature Range

CEO

CBO

EBO

CEX

I

P

TJ, T

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)

R

q

JC

250 Vdc

400 Vdc

5 Vdc

400 Vdc

16
30

5 Adc

250

1.43

−   65 to +200

0.7 °C/W

Adc

W

W/°C

°C

http://onsemi.com

16 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS, 250 WATTS

MARKING
DIAGRAM

MJ2119xG

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MJ2119x = Device Code

x = 3 or 4
G=Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin

ORDERING INFORMATION

Device Package Shipping

MJ21193 TO−3 100 Units / Tray

MJ21193G TO−3

(Pb−Free)

MJ21194 TO−3 100 Units / Tray

MJ21194G TO−3

(Pb−Free)

AYYWW

MEX

†

100 Units / Tray

100 Units / Tray

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2009

April, 2009 − Rev. 5

1 Publication Order Number:

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

MJ21193/D

MJ21193, MJ21194

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 100 mAdc, IB = 0)

(I

C

Collector Cutoff Current

(V

= 200 Vdc, IB = 0)

CE

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

CE

Collector Cutoff Current

(V

= 250 Vdc, V

CE

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

= 50 Vdc, t = 1 s (non−repetitive)

CE

= 80 Vdc, t = 1 s (non−repetitive)

(V

CE

ON CHARACTERISTICS

DC Current Gain

(I

= 8 Adc, VCE = 5 Vdc)

C

= 16 Adc, IB = 5 Adc)

(I

C

Base−Emitter On Voltage

(I

= 8 Adc, VCE = 5 Vdc)

C

Collector−Emitter Saturation Voltage

(I

= 8 Adc, IB = 0.8 Adc)

C

= 16 Adc, IB = 3.2 Adc)

(I

C

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMShFE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

Current Gain Bandwidth Product

(I

= 1 Adc, VCE = 10 Vdc, f

C

= 1 MHz)

test

Output Capacitance

(V

= 10 Vdc, IE = 0, f

CB

= 1 MHz)

test

NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

Symbol Min Typ Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

HD

f

C

T

ob

250 − − Vdc

− − 100

− − 100

− 100

mAdc

mAdc

mAdc

Adc

5

2.5

−

−

−

−

75

25

8

−

−

− − 2.2 Vdc

Vdc

−

−

−

−

−

−

0.8

0.08

1.4
4

−

−

4 − − MHz

− − 500 pF

%

PNP MJ21193

6.5

VCE = 10 V

6.0

5.5
5 V

5.0

4.5

4.0

TJ = 25°C

3.5

f

= 1 MHz

test

T

3.0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

0.1 1.0 10
I

COLLECTOR CURRENT (AMPS)

C

Figure 1. Typical Current Gain

Bandwidth Product

T

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

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2

NPN MJ21194

8.0

7.0

6.0

10 V

5.0

4.0

VCE = 5 V

3.0

2.0

TJ = 25°C

1.0
f

= 1 MHz

test

0

0.1 1.0 10
IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product