ON Semiconductor MJ21193, MJ21193G, MJ21194, MJ21194G Service Manual

© Semiconductor Components Industries, LLC, 2009

April, 2009 − Rev. 5

1 Publication Order Number:

MJ21193/D

MJ21193, MJ21194

Preferred Device

Silicon Power Transistors

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

FE

= 25 Min @ I

C

= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.5 A, 80 V, 1 Second

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

250 Vdc

Collector−Base Voltage V

CBO

400 Vdc

Emitter−Base Voltage V

EBO

5 Vdc

Collector−Emitter Voltage − 1.5 V V

CEX

400 Vdc

Collector Current − Continuous

Peak (Note 1)

I

C

16

30

Adc

Base Current − Continuous I

B

5 Adc

Total Power Dissipation @ T

C

= 25°C

Derate Above 25°C

P

D

250

1.43

W

W/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−   65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

0.7 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

MARKING

DIAGRAM

TO−204AA (TO−3)

CASE 1−07

STYLE 1

16 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS, 250 WATTS

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

†

ORDERING INFORMATION

MJ21193 TO−3 100 Units / Tray

MJ21193G TO−3

(Pb−Free)

100 Units / Tray

MJ21194 TO−3 100 Units / Tray

MJ21194G TO−3

(Pb−Free)

100 Units / Tray

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MJ2119xG

AYYWW

MEX

MJ2119x = Device Code

x = 3 or 4

G=Pb−Free Package

A = Assembly Location

YY = Year

WW = Work Week

MEX = Country of Origin

MJ21193, MJ21194

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I

C

= 100 mAdc, I

B

= 0)

V

CEO(sus)

250 − − Vdc

Collector Cutoff Current

(V

CE

= 200 Vdc, I

B

= 0)

I

CEO

− − 100

mAdc

Emitter Cutoff Current

(V

CE

= 5 Vdc, I

C

= 0)

I

EBO

− − 100

mAdc

Collector Cutoff Current

(V

CE

= 250 Vdc, V

BE(off)

= 1.5 Vdc)

I

CEX

− 100

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

CE

= 50 Vdc, t = 1 s (non−repetitive)

(V

CE

= 80 Vdc, t = 1 s (non−repetitive)

I

S/b

5

2.5

−

−

−

−

Adc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 8 Adc, V

CE

= 5 Vdc)

(I

C

= 16 Adc, I

B

= 5 Adc)

h

FE

25

8

−

−

75

Base−Emitter On Voltage

(I

C

= 8 Adc, V

CE

= 5 Vdc)

V

BE(on)

− − 2.2 Vdc

Collector−Emitter Saturation Voltage

(I

C

= 8 Adc, I

B

= 0.8 Adc)

(I

C

= 16 Adc, I

B

= 3.2 Adc)

V

CE(sat)

−

−

−

−

1.4

4

Vdc

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

RMS

= 28.3 V, f = 1 kHz, P

LOAD

= 100 W

RMS

h

FE

unmatched

(Matched pair h

FE

= 50 @ 5 A/5 V) h

FE

matched

T

HD

−

−

0.8

0.08

−

−

%

Current Gain Bandwidth Product

(I

C

= 1 Adc, V

CE

= 10 Vdc, f

test

= 1 MHz)

f

T

4 − − MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f

test

= 1 MHz)

C

ob

− − 500 pF

NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

I

C

COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

T

PNP MJ21193

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

T

NPN MJ21194

I

C

COLLECTOR CURRENT (AMPS)

0.1 1.0 10

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

8.0

7.0

6.0

4.0

3.0

5.0

1.0

0

2.0

0.1 1.0 10

V

CE

= 10 V

5 V

T

J

= 25°C

f

test

= 1 MHz

V

CE

= 5 V

10 V

T

J

= 25°C

f

test

= 1 MHz