MJ21193, MJ21194
Preferred Device
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain − h
= 25 Min @ IC = 8 Adc
FE
• Excellent Gain Linearity
• High SOA: 2.5 A, 80 V, 1 Second
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V
Collector Current − Continuous
Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
CEX
I
P
TJ, T
C
B
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)
R
q
JC
250 Vdc
400 Vdc
5 Vdc
400 Vdc
16
30
5 Adc
250
1.43
− 65 to +200
0.7 °C/W
Adc
W
W/°C
°C
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16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
MARKING
DIAGRAM
MJ2119xG
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ2119x = Device Code
x = 3 or 4
G=Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device Package Shipping
MJ21193 TO−3 100 Units / Tray
MJ21193G TO−3
(Pb−Free)
MJ21194 TO−3 100 Units / Tray
MJ21194G TO−3
(Pb−Free)
AYYWW
MEX
†
100 Units / Tray
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 5
1 Publication Order Number:
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
MJ21193/D
MJ21193, MJ21194
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
= 100 mAdc, IB = 0)
(I
C
Collector Cutoff Current
(V
= 200 Vdc, IB = 0)
CE
Emitter Cutoff Current
(V
= 5 Vdc, IC = 0)
CE
Collector Cutoff Current
(V
= 250 Vdc, V
CE
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
= 50 Vdc, t = 1 s (non−repetitive)
CE
= 80 Vdc, t = 1 s (non−repetitive)
(V
CE
ON CHARACTERISTICS
DC Current Gain
(I
= 8 Adc, VCE = 5 Vdc)
C
= 16 Adc, IB = 5 Adc)
(I
C
Base−Emitter On Voltage
(I
= 8 Adc, VCE = 5 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 8 Adc, IB = 0.8 Adc)
C
= 16 Adc, IB = 3.2 Adc)
(I
C
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
= 28.3 V, f = 1 kHz, P
RMS
LOAD
= 100 W
RMShFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched
Current Gain Bandwidth Product
(I
= 1 Adc, VCE = 10 Vdc, f
C
= 1 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f
CB
= 1 MHz)
test
NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
Symbol Min Typ Max Unit
V
CEO(sus)
I
CEO
I
EBO
I
CEX
I
S/b
h
FE
V
BE(on)
V
CE(sat)
T
HD
f
C
T
ob
250 − − Vdc
− − 100
− − 100
− 100
mAdc
mAdc
mAdc
Adc
5
2.5
−
−
−
−
75
25
8
−
−
− − 2.2 Vdc
Vdc
−
−
−
−
−
−
0.8
0.08
1.4
4
−
−
4 − − MHz
− − 500 pF
%
PNP MJ21193
6.5
VCE = 10 V
6.0
5.5
5 V
5.0
4.5
4.0
TJ = 25°C
3.5
f
= 1 MHz
test
T
3.0
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
0.1 1.0 10
I
COLLECTOR CURRENT (AMPS)
C
Figure 1. Typical Current Gain
Bandwidth Product
T
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
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2
NPN MJ21194
8.0
7.0
6.0
10 V
5.0
4.0
VCE = 5 V
3.0
2.0
TJ = 25°C
1.0
f
= 1 MHz
test
0
0.1 1.0 10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
1000
MJ21193, MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193 NPN MJ21194
1000
, DC CURRENT GAIN
FE
h
1000
, DC CURRENT GAIN
FE
h
100
100
10
TJ = 100°C
25°C
-25°C
VCE = 20 V
TJ = 100°C
25°C
-25°C
IC COLLECTOR CURRENT (AMPS)
100
, DC CURRENT GAIN
FE
h
VCE = 20 V
100101.00.1
10
COLLECTOR CURRENT (AMPS)
I
C
Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V
VCE = 5 V
PNP MJ21193
TJ = 100°C
25°C
-25°C
1000
100
, DC CURRENT GAIN
FE
h
VCE = 20 V
NPN MJ21194
TJ = 100°C
25°C
-25°C
100101.00.1
, COLLECTOR CURRENT (A)
C
I
10
I
COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V
PNP MJ21193
30
1.5 A
5.0
25
20
15
10
0
5.0010152025
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
IB = 2 A
1 A
0.5 A
100101.00.1
TJ = 25°C
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10
IC COLLECTOR CURRENT (AMPS)
100101.00.1
NPN MJ21194
35
IB = 2 A
1.5 A
1 A
0.5 A
TJ = 25°C
, COLLECTOR CURRENT (A)
C
I
5.0
30
25
20
15
10
0
5.0010152025
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
3
3.0
2.5
2.0
TJ = 25°C
IC/IB = 10
MJ21193, MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193 NPN MJ21194
1.4
1.2
TJ = 25°C
1.0
0.8
IC/IB = 10
V
BE(sat)
SATURATION VOLTAGE (VOLTS)
, BASE-EMITTER VOLTAGE (VOLTS)
BE(on)
V
1.5
1.0
0.5
0
10
1.0
0.1
V
BE(sat)
V
CE(sat)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
PNP MJ21193 NPN MJ21194
TJ = 25°C
VCE = 20 V (SOLID)
IC, COLLECTOR CURRENT (AMPS)
VCE = 5 V (DASHED)
0.6
0.4
SATURATION VOLTAGE (VOLTS)
0.2
100101.00.1
0
IC, COLLECTOR CURRENT (AMPS)
V
CE(sat)
100101.00.1
Figure 10. Typical Saturation Voltages
10
TJ = 25°C
VCE = 20 V (SOLID)
1.0
, BASE-EMITTER VOLTAGE (VOLTS)
BE(on)
V
100101.00.1
0.1
IC, COLLECTOR CURRENT (AMPS)
VCE = 5 V (DASHED)
100101.00.1
100
, COLLECTOR CURRENT (AMPS)
C
I
Figure 11. Typical Base−Emitter Voltage
10
TC = 25°C
1.0
0.1
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1 SEC
100101.0 1000
Figure 13. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
its of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on T
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
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4
Figure 12. Typical Base−Emitter Voltage
− VCE lim-
C
= 200°C; TC is vari-
J(pk)
MJ21193, MJ21194
10000
1000
C, CAPACITANCE (pF)
100
10000
C
TJ = 25°C TJ = 25°C
C
f
= 1 MHz f
(test)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21193 Typical Capacitance
ib
100101.00.1
1000
C, CAPACITANCE (pF)
100
(test)
= 1 MHz
ob
Figure 15. MJ21194 Typical Capacitance
1.2
1.1
1.0
0.9
C
ib
C
ob
VR, REVERSE VOLTAGE (VOLTS)
100101.00.1
0.8
, TOTAL HARMONIC
DISTORTION (%)
HD
T
0.7
0.6
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
FREQUENCY (Hz)
Figure 16. Typical Total Harmonic Distortion
+50 V
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
10000010000100010010
8.0 W
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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5
MJ21193, MJ21194
PACKAGE DIMENSIONS
TO−204AA (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
D
2 PL
0.13 (0.005) Y
U
V
H
L
2
1
G
−T−
K
M
−Y−
B
T
SEATING
PLANE
M
Q
M
−Q−
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MJ21193/D
6
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