ON Semiconductor MDC3105 Technical data

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MDC3105
Integrated Relay, Inductive Load Driver
This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT−23 package. It can be used to switch 3 to 6 Vdc inductive loads such as relays, solenoids, incandescent lamps, and small DC motors without the need of a free−wheeling diode.
Features
Provides a Robust Driver Interface between DC Relay Coil and
Sensitive Logic Circuits
Optimized to Switch Relays from a 3.0 V to 5.0 V Rail
Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
Features Low Input Drive Current and Good Back−to−Front Transient
Isolation
Internal Zener Eliminates Need for Free−Wheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
System Operation
Guaranteed Off State with No Input Connection
Supports Large Systems with Minimal Off−State Leakage
ESD Resistant in Accordance with the Class 1C Human Body Model
Low Sat Voltage Reduces System Current Drain by Allowing Use of
Higher Resistance Relay Coils
Pb−Free Packages are Available
Applications
Telecom: Line Cards, Modems, Answering Machines, FAX
Machines, Feature Phone Electronic Hook Switch
Computer and Office: Photocopiers, Printers, Desktop Computers
Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders, TV Set Top Boxes
Industrial: Small Appliances, White Goods, Security Systems,
Automated Test Equipment, Garage Door Openers
Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
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Relay, Inductive Load Driver
Silicon SMALLBLOCKt
Integrated Circuit
MARKING
DIAGRAMS
SOT−23
1
1
JW = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
CASE 318
STYLE 6
SC−74
CASE 318F
STYLE 8
JW M G
G
1
JW M G
G
1
INTERNAL CIRCUIT DIAGRAMS
V
(3)
out
V
1.0 k
in
(1)
33 k
GND (2)
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
6.6 V
V
(6)
out
V
1.0 k
(5)
in
33 k
GND (1)
1 Publication Order Number:
6.6 V
CASE 318FCASE 318
6.6 V
V
out
GND (4)
(3)
1.0 k
33 k
MDC3105/D
(2)
V
in
MDC3105
MAXIMUM RATINGS (T
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
Power Supply Voltage V Input Voltage V Reverse Input Voltage V
CC in(fwd) in(rev)
6.0 Vdc
6.0 Vdc
−0.5 Vdc Repetitive Pulse Zener Energy Limit (Duty Cycle 0.01%) SOT−23 Ezpk 50 mJ Output Sink Current − Continuous I Junction Temperature T Operating Ambient Temperature Range T Storage Temperature Range T
O
J
A
stg
500 mA 150 °C
− 40 to +85 °C
− 65 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Power Dissipation (Note 1) SOT−23 Derate above 25°C
Total Device Power Dissipation (Note 1) SC−74 Derate above 25°C
Thermal Resistance Junction−to−Ambient SOT−23
SC−74
1. FR−5 PCB of 1 x 0.75 x 0.062, TA = 25°C
P
D
P
D
R
q
JA
225
1.8
380
1.5
556 329
mW
mW/°C
mW
mW/°C
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Output Zener Breakdown Voltage (@ IT = 10 mA Pulse)
Output Leakage Current @ 0 Input Voltage (VO = 5.5 Vdc, Vin = O.C., TA = 25°C) (VO = 5.5 Vdc, Vin = O.C., TA = 85°C)
Guaranteed “OFF” State Input Voltage (IO 100 mA)
V
(BRout)
V
(−BRout)
I
OO
V
in(off)
6.2−6.6
−0.7
−−0.1
7.0
30
0.4 V
V V
mA
ON CHARACTERISTICS
Input Bias Current (HFE Limited) (IO = 250 mA, VO = 0.25 Vdc)
Output Saturation Voltage (IO = 250 mA, Iin = 1.5 mA)
Output Sink Current − Continuous (VCE = 0.25 Vdc, Iin = 1.5 mA)
V
I
I
in
O(sat)
O(on)
0.8 1.6
mAdc
Vdc
0.12 0.16 mA
250 400
ORDERING INFORMATION
Device Package Shipping
MDC3105LT1 SOT−23 MDC3105LT1G SOT−23
(Pb−Free)
MDC3105DMT1 SC−74
3000 / Tape & Reel
MDC3105DMT1G SC−74
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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TYPICAL APPLICATION−DEPENDENT SWITCHING PERFORMANCE
SWITCHING CHARACTERISTICS
Characteristic Symbol Min Typ Max Units
Propagation Delay Times:
Transition Times:
High to Low Propagation Delay; Figure 1 (5.0 V 74HC04) Low to High Propagation Delay; Figure 1 (5.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 13 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 13 (3.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 14 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 14 (5.0 V 74LS04)
Fall Time; Figure 1 (5.0 V 74HC04) Rise Time; Figure 1 (5.0 V 74HC04)
Fall Time; Figures 1, 13 (3.0 V 74HC04) Rise Time; Figures 1, 13 (3.0 V 74HC04)
Fall Time; Figures 1, 14 (5.0 V 74LS04) Rise Time; Figures 1, 14 (5.0 V 74LS04)
V
in
V
out
50%
MDC3105
t
PLH
90%
50%
10%
t
r
Figure 1. Switching Waveforms
t
f
t
PHL
t
PHL
t
PLH
t
PHL
t
PLH
t
PHL
t
PLH
55
85
55
mS
430
315
2.4 nS
nS
t
f
t
r
t
f
t
r
t
f
t
r
45
70
45
mS
160
195
2.4
V
CC
GND
V
Z
V
CC
GND
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TYPICAL PERFORMANCE CHARACTERISTICS
out/Iin
, TRANSISTOR DC CURRENT GAIN
FE
H
500
450
400
350
300
250
200
150
100
MDC3105
(ON CHARACTERISTICS)
5.0
INPUT VOLTAGE (VOLTS)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
MC68HC05C8
@ 5.0 Vdc
MC54LS04
+BAL99LT1
0
INPUT CURRENT (mA)
TJ = 85°C
25°C
−40°C
VO = 1.0 V
50
0
10 3.0 3.50.5 1.0 1.5 2.0
IO, OUTPUT SINK CURRENT (mA)
VO = 0.25 V
100 10001.0
Figure 2. Transistor DC Current Gain Figure 3. Input V−I Requirement Compared to
Possible Source Logic Outputs
MC74HC04
@ 4.5 Vdc
MDC3105LT1
Vin vs. I
MC68HC05C8 @ 3.3 Vdc MC14049B @ 4.5 Vdc
2.5 4.00
in
MC74HC04
@ 3.0 Vdc
TJ = 25°C
VO = 0.25 V
OUTPUT CURRENT (mA)
, OUTPUT VOLTAGE (Vdc)V
out
50
45
40
35
30
25
20
15
10
5.0 0
0
0.01 0.02 0.03 0.04 0.05 0.5 3.01.5 4.0 4.5 5.0
INPUT CURRENT (mA)
TJ = 85°C
25°C
−40 °C
0.06 0.07 0.08 0.09 0.1
, OUTPUT CURRENT (mA)
out
I
500
400
300
200
100
Iin = 1.5 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0
1.00
2.0
VO, OUTPUT VOLTAGE (Vdc)
2.5 3.5
Figure 4. Threshold Effects Figure 5. Transistor Output V−I Characteristic
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 0
10 mA
0.10.04
50 mA
Iin, INPUT CURRENT (mA)
125 mA
175 mA
1.0 10 1000
Figure 6. Output Saturation Voltage versus
I
TJ = 25°C
TJ = −40°C
I
out
500 mA
350 mA
=
8.5
8.0
7.5
7.0
6.5
, ZENER CLAMP VOLTAGE (VOLTS)
Z
V
6.0
1.0 100
TJ = 85°C
25°C
−40 °C
10
IZ, ZENER CURRENT (mA)
Figure 7. Zener Clamp Voltage versus Zener
Current
0.2 mA
0.1 mA
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