ON Semiconductor MCR100 Technical data

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MCR100 Series

Preferred Device

Sensitive Gate Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment.

Features

• Sensitive Gate Allows Triggering by Microcontrollers and Other

Logic Circuits

• Blocking Voltage to 600 V

• On−State Current Rating of 0.8 Amperes RMS at 80°C

• High Surge Current Capability − 10 A

• Minimum and Maximum Values of IGT, VGT and IH Specified

for Ease of Design

• Immunity to dV/dt − 20 V/sec Minimum at 110°C

• Glass-Passivated Surface for Reliability and Uniformity

• Pb−Free Packages are Available*

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SCRs

0.8 A RMS

100 thru 600 V

TO−92 (TO−226)

CASE 029 STYLE 10

MARKING DIAGRAM

MCR 100−x AYWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2005

January, 2005 − Rev. 6

1 Publication Order Number:

x = Specific Device Code A = Assembly Location Y = Year WW = Work Week

PIN ASSIGNMENT

1 2 3

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

Cathode

Gate

Anode

MCR100/D

MCR100 Series

(

)

(Pb−Free)

ORDERING INFORMATION

Device Package Code Shipping

MCR100−003 MCR100−004 MCR100−006

5000 Units / Bulk

MCR100−008 MCR100−3RL MCR100−6RL

TO−92 (TO−226)

2000 Units / Tape & Reel MCR100−6RLRA MCR100−6RLRM MCR100−6ZL1

2000 Units / Tape & Ammunition Box

MCR100−8RL 2000 Units / Tape & Reel MCR100−003G MCR100−006G

5000 Units / Bulk MCR100−008G MCR100−3RLG MCR100−6RLG MCR100−6RLRAG

TO−92 (TO−226)

Pb−Free

2000 Units / Tubes

2000 Units / Tape & Reel MCR100−6RLRMG MCR100−6ZL1G

2000 Units / Tape & Ammunition Box

MCR100−8RLG 2000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

MAXIMUM RATINGS (T

Peak Repetitive Off−State Voltage (Note 1)

= 40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)

On-State RMS Current, (TC = 80°C) 180° Conduction Angles I Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) I

= 25°C unless otherwise noted)

Rating

MCR100−3 MCR100−4 MCR100−6 MCR100−8

Symbol Value Unit

DRM,

RRM

100 200 400 600

T(RMS)

TSM

0.8 A 10 A

Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s Forward Peak Gate Power, (TA = 25°C, Pulse Width  1.0 s) Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) P Forward Peak Gate Current, (TA = 25°C, Pulse Width  1.0 s) Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width  1.0 s) Operating Junction Temperature Range @ Rate V

RRM

and V

DRM

Storage Temperature Range T

G(AV)

GRM

stg

0.1 W

0.10 W

1.0 A

5.0 V

−40 to 110 °C

−40 to 150 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. V

and V

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

RRM

source such that the voltage ratings of the devices are exceeded.

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