PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• Immunity to dV/dt − 20 V/sec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*
http://onsemi.com
SCRs
0.8 A RMS
100 thru 600 V
G
A
3
TO−92 (TO−226)
CASE 029
STYLE 10
1
2
K
MARKING
DIAGRAM
MCR
100−x
AYWW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 6
1Publication Order Number:
x= Specific Device Code
A= Assembly Location
Y= Year
WW= Work Week
PIN ASSIGNMENT
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Cathode
Gate
Anode
MCR100/D
MCR100 Series
(
)
(Pb−Free)
ORDERING INFORMATION
DevicePackage CodeShipping
MCR100−003
MCR100−004
MCR100−006
5000 Units / Bulk
MCR100−008
MCR100−3RL
MCR100−6RL
TO−92 (TO−226)
2000 Units / Tape & Reel
MCR100−6RLRA
MCR100−6RLRM
MCR100−6ZL1
2000 Units / Tape & Ammunition Box
MCR100−8RL2000 Units / Tape & Reel
MCR100−003G
MCR100−006G
5000 Units / Bulk
MCR100−008G
MCR100−3RLG
MCR100−6RLG
MCR100−6RLRAG
TO−92 (TO−226)
Pb−Free
2000 Units / Tubes
2000 Units / Tape & Reel
MCR100−6RLRMG
MCR100−6ZL1G
2000 Units / Tape & Ammunition Box
MCR100−8RLG2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
p
p
MAXIMUM RATINGS (T
Peak Repetitive Off−State Voltage (Note 1)
(T
= 40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
and V
DRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
RRM
source such that the voltage ratings of the devices are exceeded.
http://onsemi.com
2
THERMAL CHARACTERISTICS
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
Lead Solder Temperature
(1/16″ from case, 10 secs max)
MCR100 Series
CharacteristicSymbolMaxUnit
R
JC
R
JA
T
L
75
°C/W
200
260°C
ELECTRICAL CHARACTERISTICS(T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
= Rated V
(V
D
DRM
and V
; RGK = 1 k)T
RRM
T
C
C
ON CHARACTERISTICS
Peak Forward On−State Voltage
(ITM = 1.0 A Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc) (Note 3)TC = 25°C
(V
= 7.0 Vdc, RL = 100 )
AK
Holding Current
(V
= 7.0 Vdc, Initiating Current = 20 mA)TC = −40°C
AK
(2)
Latch CurrentTC = 25°C
(V
= 7.0 V, Ig = 200 A)TC = −40°C
AK
Gate Trigger Voltage (Continuous dc) (Note 3)TC = 25°C
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Voltage Current Characteristic of SCR
on state
at V
I
RRM
Reverse Avalanche Region
Anode −
http://onsemi.com
RRM
Reverse Blocking Region
(off state)
3
+ Current
V
TM
I
H
Forward Blocking Region
(off state)
I
DRM
Anode +
at V
DRM
+ Voltage
MCR100 Series
100
GATE TRIGGER CURRENT ( A)
1000
90
80
70
60
50
40
30
20
10
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
GATE TRIGGER VOLTAGE (VOLTS)
0.3
958065
1105035205−10−25−40
0.2
TJ, JUNCTION TEMPERATURE (°C)
9580
110655035205−10−25−40
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
1000
100
HOLDING CURRENT ( A)
10
TJ, JUNCTION TEMPERATURE (°C)
9580
110655035205−10−25−40
Figure 3. Typical Holding Current versus
Junction Temperature
120
110
100
90
80
70
60
50
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°
C
T
I
, RMS ON-STATE CURRENT (AMPS)
T(RMS)
30°60°90°120°
DC
180°
0.50.40.30.20.10
Figure 5. Typical RMS Current Derating
100
LATCHING CURRENT ( A)
10
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Latching Current versus
Junction Temperature
10
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1
, INSTANTANEOUS ON−STATE CURRENT (AMPS)
0.140
T
I
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 6. T ypical On−State Characteristics
110655035205−10−25−40
9580
2.92.6
3.53.22.32.01.71.41.10.80.5
http://onsemi.com
4
MCR100 Series
TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2AH2A
H
W2
H4
H5
L1
H1
W1
W
F1
F2
P2P2
P1
P
L
D
H2BH2B
T1
T
T2
Figure 7. Device Positioning on T ape
Specification
InchesMillimeter
SymbolItem
D
D2
F1, F2
H
H1
H2A
H2B
H4
H5
L
L1
P
P1
P2
T
T1
T2
W
W1
W2
Tape Feedhole Diameter
Component Lead Thickness Dimension
Component Lead Pitch
Bottom of Component to Seating Plane
Feedhole Location
Deflection Left or Right
Deflection Front or Rear
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
Feedhole Pitch
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
Carrier Strip Width
Adhesive Tape Width
Adhesive Tape Position
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
MinMaxMinMax
0.14960.16533.84.2
0.0150.0200.380.51
0.09450.1102.42.8
.059.1561.54.0
0.33460.37418.59.5
00.03901.0
00.05101.0
0.70860.7681819.5
0.6100.64915.516.5
0.33460.4338.511
0.09842—2.5—
0.49210.507912.512.9
0.23420.26585.956.75
0.13970.15563.553.95
0.060.080.150.20
—0.0567—1.44
0.0140.0270.350.65
0.68890.748117.519
0.21650.28415.56.3
.00590.01968.150.5
http://onsemi.com
5
SEATING
PLANE
MCR100 Series
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 029−11
ISSUE AL
NOTES:
A
B
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
N
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MINMAXMINMAX
A0.175 0.2054.455.20
B0.170 0.2104.325.33
C0.125 0.1653.184.19
D0.016 0.021 0.407 0.533
G 0.045 0.0551.151.39
H 0.095 0.1052.422.66
J0.015 0.0200.390.50
K 0.500−−− 12.70−−−
L 0.250−−−6.35−−−
N 0.080 0.1052.042.66
P−−− 0.100−−−2.54
R 0.115−−−2.93−−−
V 0.135−−−3.43−−−
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MCR100/D
6
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