ON Semiconductor MCR100 Technical data
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MCR100 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• Immunity to dV/dt − 20 V/sec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*
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SCRs
0.8 A RMS
100 thru 600 V
G
A
3
TO−92 (TO−226)
CASE 029
STYLE 10
1
2
K
MARKING
DIAGRAM
MCR
100−x
AYWW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 6
1 Publication Order Number:
x = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Cathode
Gate
Anode
MCR100/D
MCR100 Series
(
)
(Pb−Free)
ORDERING INFORMATION
Device Package Code Shipping
MCR100−003
MCR100−004
MCR100−006
5000 Units / Bulk
MCR100−008
MCR100−3RL
MCR100−6RL
TO−92 (TO−226)
2000 Units / Tape & Reel
MCR100−6RLRA
MCR100−6RLRM
MCR100−6ZL1
2000 Units / Tape & Ammunition Box
MCR100−8RL 2000 Units / Tape & Reel
MCR100−003G
MCR100−006G
5000 Units / Bulk
MCR100−008G
MCR100−3RLG
MCR100−6RLG
MCR100−6RLRAG
TO−92 (TO−226)
Pb−Free
2000 Units / Tubes
2000 Units / Tape & Reel
MCR100−6RLRMG
MCR100−6ZL1G
2000 Units / Tape & Ammunition Box
MCR100−8RLG 2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
p
p
MAXIMUM RATINGS (T
Peak Repetitive Off−State Voltage (Note 1)
(T
= 40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
J
On-State RMS Current, (TC = 80°C) 180° Conduction Angles I
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) I
= 25°C unless otherwise noted)
J
Rating
MCR100−3
MCR100−4
MCR100−6
MCR100−8
Symbol Value Unit
V
V
DRM,
RRM
V
100
200
400
600
T(RMS)
TSM
0.8 A
10 A
Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width 1.0 s)
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) P
Forward Peak Gate Current, (TA = 25°C, Pulse Width 1.0 s)
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width 1.0 s)
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
V
Storage Temperature Range T
P
GM
G(AV)
I
GM
GRM
T
stg
J
0.1 W
0.10 W
1.0 A
5.0 V
−40 to 110 °C
−40 to 150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
and V
DRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
RRM
source such that the voltage ratings of the devices are exceeded.
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2
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