Octal 3-State Noninverting
D Flip-Flop with
LSTTL-Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT374A may be used as a level converter for
interfacing TTL or NMOS outputs to High−Speed CMOS inputs.
The HCT374A is identical in pinout to the LS374.
Data meeting the setup and hold time is clocked to the outputs with
the rising edge of Clock. The Output Enable does not affect the state of
the flip−flops, but when Output Enable is high, the outputs are forced
to the high−impedance state. Thus, data may be stored even when the
outputs are not enabled.
The HCT374A is identical in function to the HCT574A, which has
the input pins on the opposite side of the package from the output pins.
This device is similar in function to the HCT534A, which has
inverting outputs.
Features
• Output Drive Capability: 15 LSTTL Loads
• TTL/NMOS−Compatible Input Levels
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 4.5 to 5.5 V
• Low Input Current: 1.0 mA
• In Compliance With the JEDEC Standard No. 7.0 A Requirements
• Chip Complexity: 276 FETs or 69 Equivalent Gates
• Improvements over HCT374
♦ Improved Propagation Delays
♦ 50% Lower Quiescent Power
♦ Improved Input Noise and Latchup Immunity
• These Devices are Pb−Free and are RoHS Compliant
LOGIC DIAGRAM
2
Q0
5
Q1
6
Q2
9
Q3
Q4
Q5
Q6
Q7
NONINVERTING
OUTPUTS
12
15
16
19
DATA
INPUTS
D0
D1
D2
D3
D4
D5
D6
D7
CLOCK
3
4
7
8
13
14
17
18
11
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SOIC−20
DW SUFFIX
CASE 751D
TSSOP−20
DT SUFFIX
CASE 948E
PIN ASSIGNMENT
20
OUTPUT ENABLE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
GND
1
2
3
4
5
6
7
8
9
10
V
CC
19
Q7
18
D7
17
D6
16
Q6
15
Q5
14
D5
13
D4
12
Q4
11
CLOCK
MARKING DIAGRAMS
20
HCT374A
AWLYYWWG
1
SOIC−20
A= Assembly Location
WL, L= Wafer Lot
YY, Y= Year
WW, W = Work Week
G or G= Pb−Free Package
See detailed ordering and shipping information on page 5 o
ORDERING INFORMATION
this data sheet.
1Publication Order Number:
MC74HCT374A/D
MC74HCT374A
Design Criteria
Internal Gate Count*
Internal Gate Propagation Delay
Internal Gate Power Dissipation
Speed Power Product
Value
69
1.5
5.0
.0075
Units
ea.
ns
mW
pJ
*Equivalent to a two−input NAND gate.
MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating: SOIC Package: –7 mW/_C from 65_ to 125_C
DC Supply Voltage (Referenced to GND)–0.5 to +7.0V
CC
V
DC Input Voltage (Referenced to GND)–0.5 to VCC + 0.5V
in
DC Output Voltage (Referenced to GND)–0.5 to VCC + 0.5V
out
I
DC Input Current, per Pin±20mA
in
I
DC Output Current, per Pin±35mA
out
I
DC Supply Current, VCC and GND Pins±75mA
CC
P
Power Dissipation in Still Air,SOIC Package†
D
TSSOP Package†
Storage Temperature–65 to +150
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
(SOIC or TSSOP Package)
TSSOP Package: −6.1 mW/_C from 65_ to 125_C
500
450
260
mW
_C
_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, V
V
should be constrained to the
out
range GND v (V
or V
in
) v VCC.
out
in
and
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
Unused outputs must be left open.
).
RECOMMENDED OPERATING CONDITIONS
SymbolParameterMinMaxUnit
V
Vin, V
tr, tfInput Rise and Fall Time (Figure 1)0500ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC Supply Voltage (Referenced to GND)4.55.5V
CC
DC Input Voltage, Output Voltage (Referenced to GND)0V
out
T
Operating Temperature, All Package Types–55+125
A
CC
V
_C
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2
MC74HCT374A
l
l
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbo
V
Minimum High−Level Input VoltageV
IH
V
Maximum Low−Level Input VoltageV
IL
V
V
Minimum High−Level Output Voltage
OH
Maximum Low−Level Output Voltage
OL
I
Maximum Input Leakage CurrentVin = VCC or GND5.5±0.1±1.0±1.0
in
I
Maximum Three−State Leakage
OZ
Current
I
Maximum Quiescent Supply Current
CC
(per Package)
DI
Additional Quiescent Supply CurrentVin = 2.4 V, Any One Input
CC
1. Total Supply Current = ICC + ΣDICC.
ParameterTest Conditions
= 0.1 V or VCC – 0.1 V
out
|I
| ≤ 20 mA
out
= 0.1 V or VCC – 0.1 V
out
|I
| ≤ 20 mA
out
Vin = VIH or V
|I
| ≤ 20 mA
out
Vin = VIH or V
|I
| ≤ 6.0 mA4.53.983.843.7
out
Vin = VIH or V
|I
| ≤ 20 mA
out
Vin = VIH or V
|I
| ≤ 6.0 mA4.50.260.330.4
out
IL
IL
IL
IL
Output in High−Impedance State
= VIL or V
V
in
V
= VCC or GND
out
IH
Vin = VCC or GND
I
= 0 mA
out
V
= VCC or GND, Other Inputs
in
= 0 mA
l
out
Guaranteed Limit
CC
V
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
−55 to
25_C
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
≤ 85_C≤ 125_C
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
V
5.5±0.5±5.0±10
5.54.040160
≥ −55_C25_C to 125_C
5.5
2.92.4
Unit
V
V
V
V
mA
mA
mA
mA
AC ELECTRICAL CHARACTERISTICS (V
Symbo
f
Maximum Clock Frequency (50% Duty Cycle)
max
= 5.0 V ±10%, CL = 50 pF, Input tr = tf = 6.0 ns)
CC
Parameter
(Figures 1 and 4)
t
,
PLH
t
t
t
t
t
t
TLH
t
C
Maximum Propagation Delay, Clock to Q
PHL
PLZ
PHZ
PZL
PZH
THL
C
out
in
(Figures 1 and 4)
,
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
,
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
,
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
Maximum Input Capacitance101010pF
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
C
Power Dissipation Capacitance (Per Flip−Flop)*65pF
PD
*Used to determine the no−load dynamic power consumption: PD = CPD V
2
f + ICC VCC.
CC
Guaranteed Limit
−55 to 25_C≤ 85_C≤ 125_C
302420MHz
313947ns
303845ns
303845ns
121518ns
151515pF
Typical @ 25°C, VCC = 5.0 V
Unit
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3
MC74HCT374A
l
TIMING REQUIREMENTS (V
= 5.0 V ± 10%, Input tr = tf = 6.0 ns)
CC
Symbo
t
Minimum Setup Time, Data to Clock
su
(Figure 3)
t
Minimum Hold Time, Clock to Data
h
(Figure 3)
t
Minimum Pulse Width, Clock
w
(Figure 1)
tr, tfMaximum Input Rise and Fall Times
(Figure 1)
CLOCK
t
r
2.7 V
1.3 V
0.3 V
t
w
t
90%
1.3 V
Q
10%
PLH
t
TLH
t
f
1/f
max
t
PHL
Parameter
t
THL
SWITCHING WAVEFORMS
V
CC
GND
OUTPUT
ENABLE
Q
Q
Guaranteed Limit
−55 to 25_C≤ 85_C≤ 125_C
121518ns
5.05.05.0ns
121518ns
500500500ns
1.3 V
t
t
PLZ
PZL
1.3 V
10%
t
PZHtPHZ
90%
1.3 V
Unit
3 V
GND
HIGH
IMPEDANCE
V
OL
V
OH
HIGH
IMPEDANCE
DEVICE
UNDER
TEST
Figure 1.
TEST POINT
OUTPUT
CL*
DATA
CLOCK
VALID
1.3 V
t
su
1.3 V
Figure 3.
TEST CIRCUITS
DEVICE
UNDER
TEST
Figure 2.
3 V
t
h
OUTPUT
GND
3 V
GND
TEST POINT
1 kW
CL*
CONNECT TO VCC WHEN
TESTING t
PLZ
AND t
PZL
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
*Includes all probe and jig capacitance
Figure 4.
*Includes all probe and jig capacitance
Figure 5.
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4
MC74HCT374A
EXPANDED LOGIC DIAGRAM
D0D1D2D3D4D5D6D7
347813141718
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
CLOCK
OUTPUT
ENABLE
C
11
1
C
256912151619
Q0Q1Q2Q3Q4Q5Q6Q7
C
C
C
C
C
C
ORDERING INFORMATION
DevicePackageShipping
MC74HCT374ADWGSOIC−20
(Pb−Free)
MC74HCT374ADWR2GSOIC−20
(Pb−Free)
MC74HCT374ADTR2GTSSOP−20
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
38 Units / Rail
1000 Units / Reel
2500 Units / Reel
†
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 1:1
D
20
M
B
M
H
0.25
1
b20X
M
SAS
T
0.25
18X
e
RECOMMENDED
SOLDERING FOOTPRINT*
20X
0.52
2011
A
11
E
10
B
B
A
A1
T
20X
1.30
SOIC−20 WB
CASE 751D−05
SEATING
PLANE
ISSUE H
_
h X 45
DATE 22 APR 2015
q
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MINMAX
A2.352.65
A10.100.25
b0.350.49
c0.230.32
D 12.65 12.95
E7.407.60
e1.27 BSC
L
c
H 10.05 10.55
h0.250.75
L0.500.90
q0 7
__
GENERIC
MARKING DIAGRAM*
20
XXXXXXXXXXX
XXXXXXXXXXX
AWLYYWWG
11.00
1
XXXXX = Specific Device Code
1
10
A= Assembly Location
WL= Wafer Lot
YY= Year
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42343B
SOIC−20 WB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
WW= Work Week
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
A= Assembly Location
L= Wafer Lot
Y= Year
W = Work Week
G= Pb−Free Package
0.65
PITCH
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
16X
0.36
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
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