ON Semiconductor MC74HC04A Technical data

MC74HC04A
Hex Inverter
High−Performance Silicon−Gate CMOS
The MC74HC04A is identical in pinout to the LS04 and the MC14069. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
The device consists of six three−stage inverters.
Features
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1 A
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 36 FETs or 9 Equivalent Gates
Pb−Free Packages are Available*
LOGIC DIAGRAM
A2
A3
A4
1
3
5
9
2
Y1A1
4
Y2
6
Y3
Y = A
8
Y4
14
14
14
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PDIP−14
N SUFFIX
1
1
CASE 646
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14 DT SUFFIX
CASE 948G
1
A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
MARKING
DIAGRAMS
14
MC74HC04AN
AWLYYWW
1
14
HC04A
AWLYWW
1
14
HC
04
ALYW
1
A5
A6
11
13
10
Y5
12
Y6
Pinout: 14−Lead Packages (Top View)
V
A6 Y6 A5 Y5 A4 Y4
CC
1314 12 11 10 9 8
21 34567
A1 Y1 A2 Y2 A3 Y3 GND
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 10
1 Publication Order Number:
FUNCTION TABLE
Inputs Outputs
A
L
H
Y
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
MC74HC04A/D
MC74HC04A
ОООООООООООООООООООООО
ОООООООООООООООООООООО
ОООООООООООООООООООООО
ОООООООООООООООООООООО
ОООООООООООООООООООООО
ОООООООООООООООООООООО
Î
Î
ОООООООООООООООООООООО
Î
Î
Î
Î
Î
Î
Î
Î
ОООООООООООООООООООООО
Î
Î
Î
Î
ОООООООООООООООООООООО
ОООООООООООООООООООООО
ОООООООООООООООООООООО
ОООООООООООООООООООООО
Î
ОООООООООООООООООООООО
Î
Î
Î
Î
Î
MAXIMUM RATINGS
Symbol
V
CC
V
V
out
I
in
I
out
I
CC
P
ÎÎÎ
ÎÎÎ
T
stg
T
ÎÎÎ
DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP†
D
ОООООООООООООООООООО
ОООООООООООООООООООО
Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООООООООООО
Plastic DIP, SOIC or TSSOP Package
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V V
should be constrained to the range GND (Vin or V
out
(e.g., either GND or V
†Derating − Plastic DIP: – 10 mW/C from 65 to 125C
). Unused outputs must be left open.
CC
SOIC Package: – 7 mW/C from 65 to 125C TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Parameter
Value
– 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5
± 20 ± 25 ± 50
750
SOIC Package†
TSSOP Package†
ÎÎÎÎ
500 450
ÎÎÎÎ
– 65 to + 150
ÎÎÎÎ
260
) VCC. Unused inputs must always be tied to an appropriate logic voltage level
out
Unit
mA mA mA
mW
Î
Î
CC
Î
V V V
in
and
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
out
T
A
tr, t
f
ÎÎÎ
DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time VCC = 2.0 V
(Figure 1) V
ОООООООООООООООООООО
Parameter
CC
V
CC
= 4.5 V = 6.0 V
Min
2.0 0
– 55
0 0
Î
0
Max
6.0
V
CC
+ 125
1000
500
ÎÎ
400
Unit
V V
C
ns
Î
ORDERING INFORMATION
Device Order Number Package Shipping
MC74HC04AN PDIP−14 2000 / Rail MC74HC04ANG PDIP−14
(Pb−Free) MC74HC04AD SOIC−14 55 / Rail MC74HC04ADG SOIC−14
(Pb−Free) MC74HC04ADR2 SOIC−14 2500 / Tape & Reel MC74HC04ADR2G SOIC−14
(Pb−Free) MC74HC04ADTR2 TSSOP−14* 2500 / Tape & Reel MC74HC04AF SOEIAJ−14 50 / Rail MC74HC04AFG SOEIAJ−14
(Pb−Free) MC74HC04AFEL SOEIAJ−14 2000 / Tape & Reel MC74HC04AFELG SOEIAJ−14
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
2000 / Rail
55 / Rail
2500 / Tape & Reel
50 / Rail
2000 / Tape & Reel
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2
MC74HC04A
V
V
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol Parameter Condition
V
IH
Minimum High−Level Input Voltage
V
= 0.1V or VCC −0.1V
out
| 20A
|I
out
CC
V
2.0
3.0
4.5
6.0
V
IL
Maximum Low−Level Input Voltage
V
= 0.1V or VCC − 0.1V
out
| 20A
|I
out
2.0
3.0
4.5
6.0
V
OH
Minimum High−Level Output Voltage
Vin = VIH or V |I
| 20A
out
IL
2.0
4.5
6.0
Vin =VIH or V
V
OL
Maximum Low−Level Output Voltage
Vin = VIH or V |I
| 20A
out
|I
out
|I
out
|I
out
| 2.4mA | 4.0mA | 5.2mA
IL
IL
3.0
4.5
6.0
2.0
4.5
6.0
Vin = VIH or V
I
in
Maximum Input Leakage
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A
|I
out
|I
out
|I
out
| 2.4mA | 4.0mA | 5.2mA
IL
3.0
4.5
6.0
Current
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
= 0A
out
6.0 1.0 10 40 A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor H igh−Speed CMOS D ata B ook (DL129/D).
Guaranteed Limit
−55 to 25°C ≤85°C ≤125°C Unit
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.20
3.70
5.20
0.1
0.1
0.1
0.40
0.40
0.40
V
V
V
V
AC CHARACTERISTICS (C
Symbol Parameter
t
,
t
t
t
PLH PHL
TLH
THL
C
in
Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2)
,
Maximum Output Transition Time, Any Output (Figures 1 and 2)
Maximum Input Capacitance 10 10 10 pF
= 50pF, Input tr = tf = 6ns)
L
CC
−55 to 25°C ≤85°C ≤125°C Unit
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
Guaranteed Limit
75 30 15 13
75 27 15 13
95 40 19 16
95 32 19 16
110
55 22 19
110
36 22 19
ns
ns
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Inverter)*
*Used to determine the no−load dynamic power consumption: PD = CPD V
2
f + ICC VCC. For load considerations, see Chapter 2 of t h e
CC
20
pF
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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3
INPUT A
OUTPUT Y
90%
50%
10%
t
PLH
MC74HC04A
t
f
90%
50%
10%
t
r
V
CC
GND
t
PHL
t
TLH
Figure 1. Switching Waveforms
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
t
THL
Figure 3. Expanded Logic Diagram
(1/6 of the Device Shown)
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4
YA
−T−
SEATING PLANE
14 8
17
N
HG
MC74HC04A
PACKAGE DIMENSIONS
PDIP−14
N SUFFIX
CASE 646−06
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
B
A
F
L
C
D
14 PL
0.13 (0.005)
K
J
M
M
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 18.80 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L
0.290 0.310 7.37 7.87
M −−− 10 −−− 10
N 0.015 0.039 0.38 1.01
MILLIMETERSINCHES

−T−
SEATING PLANE
SOIC−14
D SUFFIX
CASE 751A−03
ISSUE G
−A−
14
1
G
D 14 PL
0.25 (0.010) A
8
−B−
P
7 PL
M
0.25 (0.010) B
7
X 45
C
R
K
M
S
B
T
S
M
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL
F
CONDITION.
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7
 
P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
INCHESMILLIMETERS
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5
MC74HC04A
PACKAGE DIMENSIONS
TSSOP−14 DT SUFFIX
CASE 948G−01
ISSUE A
0.10 (0.004)
−T−
SEATING PLANE
14X REFK
S
U
T
S
N
0.25 (0.010)
U0.15 (0.006) T
S
2X L/2
0.10 (0.004) V
14
M
8
M
L
PIN 1 IDENT.
1
S
U0.15 (0.006) T
A
−V−
B
N
−U− F
7
DETAIL E
K
K1
J
J1
SECTION N−N
C
D
G
H
DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.
DIM MIN MAX MIN MAX
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C −−− 1.20 −−− 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024
−W−
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8

INCHESMILLIMETERS
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MC74HC04A/D
6
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