ON Semiconductor MC34271 Technical data

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MC34271
Liquid Crystal Display and Backlight Integrated Controller
Both devices have three additional features. The first is an ELD Output that can be used to drive a backlight or a liquid crystal display . The ELD output frequency is the clock divided by 256. The second feature allows four additional output bias voltages, in specific proportions to VB, one of the switching regulated output voltages. It allows use of mixed logic circuitry and provides a voltage bias for N–Channel load control MOSFETst. The third feature is an Enable input that allows a logic level signal to turn–“off” or turn–“on” both switching regulators.
Due to the low bias current specifications, this device is ideally suited for battery powered computer, consumer, and industrial equipment where an extension of useful battery life is desirable.
MC34271 Features:
Low Standby Bias Current of 5.0 µA
Uncommitted Switching Regulators Allow Both Positive and
Negative Supply Voltages
Logic Enable Allows Microprocessor Control of All Outputs
Synchronizable to External Clock
Mode Commandable for ELD and LCD Interface
Frequency Synchronizable
Auxiliary Output Bias Voltages Enable Load Control via N–Channel
FETs
MAXIMUM RATINGS (T
Rating
Input Voltage Power Dissipation and
Thermal Characteristics
Maximum Power Dissipation – Case 873 P Thermal Resistance, Junction–to–Ambient R
Thermal Resistance, Junction–to–Case R Output #1 and #2 Switch Current Output #1 and #2 “Off”–State V oltage Feedback Enable MOSFETs
“Off”–State Voltage Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range
= 25°C, unless otherwise noted.)
A
Symbol Value Unit
V
DD
D
θJA θJC
ISL & I
SB
V
SL
V
LF
T
J
T
A
T
stg
16
1.43 W 100 °C/W
60 °C/W
500
60 20
125
0 to +70
–55 to +150
Vdc
mA Vdc Vdc
°C °C °C
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1
QFP–32
FB SUFFIX
CASE 873
PIN CONNECTIONS AND
MARKING DIAGRAM
32
31 30 29 2728 26 25
1
T
SW
124
DS
1
2
Ref
1
3
FB
1
4
Comp
1
5
SS
1
6
S
1
7
D
1
8
Drv
1
ELD
9101112 1413 15 16
R
Sync
Mode
V
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
Gnd
AWLYYWW
DD
4
V
(Top View)
A
V
MC34271
3
V
1
ref
V
EN
DS
Ref
Comp
SS
V2V1V
FB
V
EN
S D
0
2
2
23
2
22
2
21
2
20
2
19
2
18
2
17
B
ORDERING INFORMATION
Device Package Shipping
MC34271FB QFP–32 250 Units / Tray
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
1 Publication Order Number:
MC34271/D
EL
Panel
From DAC
EL
Control
µP Control
V
B
V
in
On/Off
Comp
Comp
VA = 5.0 V
MC34271
Representative Block Diagram
SW
EN
Drv
Sync
R
V
Ref
Ref
FB
EN
Ref
FB
1
32
1
26
1
8
31
30
T
V
27
1.25 V
1
2
1
3
1
4
2
25
2
23
2
22
2
21
28
÷ 2
ref
V
DD
BIAS
OSC
Circuit #1
PWM
Circuit #2
ELD
EN
PWM
BIAS Output
Buffers
D
1
7
S
1
6
ELD
9
V
V
DD
DD
11
Mode
10
D
2
18
S
2
19
V
B
17
V
0
16
V
1
15
V
2
14
V
3
13
V
in
V
B
V
0
V
1
V
2
V
3
Gnd
29
This device contains 350 active transistors.
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V
4
12
V
4
MC34271
ELECTRICAL CHARACTERISTICS (V
the operating ambient temperature range that applies, unless otherwise noted.)
Characteristic
REFERENCE SECTION
Reference Voltage (TJ = 25°C) V Line Regulation (VDD = 5.0 V to 12.5 V) Reg Load Regulation (IO = 0 to 120 µA) Reg Total Variation (Line, Load and Temperature) V
ERROR AMPLIFIERS
Input Offset Voltage (VCM = 1.25 V) V Input Bias Current (VCM = 1.25 V) I Open Loop Voltage Gain (VCM = 1.25 V, V Output Voltage Swing V
High State (IOH = –100 µA) Ve Low State (IOL = 100 µA) Ve
BIAS VOLTAGE
Voltage (VDD = 5.0 V to 12.5 V, IO = 0) V
OSCILLATOR AND PWM SECTIONS
Total Frequency Variation Over Line and Temperature f
VDD = 5.0 V to 10 V, TA = 0° to 70°C, RT = 169 k 90 115 140
Duty Cycle at Each Output %
Maximum DC Minimum DC
Sync Input
Input Resistance (V Minimum Sync Pulse Width T
OUTPUT MOSFETs
Output Voltage – “On”–State (I Output Current – “Off”–State (VOH = 40 V) I Rise and Fall Times tr, t
EL DISCHARGE OUTPUT (ELD) AND DRV
Output Voltage – “On”–State (I Output Voltage – “On”–State (I Output Voltage – “Off”–State (I Output Voltage – “Off”–State (I
FEEDBACK ENABLE SWITCHES (DS1, DS2)
Output Voltage – “Low”–State (I Output Current – “Off”–State (VOH = 12.5 V) Ife
SWITCHED VDD OUTPUT (SW1)
Output Voltage V
Switch “On” (EN1 = 1, I Switch “Off” (EN1 = 0, I
AUXILIARY VOLTAGE OUTPUTS
V0 Enable Switch
“On”–Resistance: VB to V “Off”–State Leakage Current (VB = 10 V) I V0 Voltage (VB = 30 V, I V0 Resistance (I
NOTE: 1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
= 3.5 V) R
sync
= 200 mA) V
sink
= 100 µA) V
sink
= 50 mA) V
sink
= –100 µA) V
source
= –50 mA) V
source
= 1.0 mA) Vfe
sink
= 100 µA) Vsw
source
= 100 µA) Vsw
sink
0
= 0 mA) V
source
= 4.0 mA) R
source
= 6.0 V, for typical values TA = Low to High [Note 1], for min/max values TA is
DD
Symbol Min Typ Max Unit
1.225 1.250 1.275 V – 2.0 10 mV – 2.0 10 mV
1.215 1.285 V
1.0 10 mV – 120 600 nA
80 100 dB
VA–1.5 4.0 5.5
0 1.0
4.6 5.0 5.4 V
92 95
0
25 50 100 k
1.0 µs
150 250 mV – 0.1 1.0 µA – 50 ns
30 100 mV – 2.0 2.5 V
VDD–0.5 5.9 V VDD–3.5 3.3 V
10 100 mV – 0.6 1.0 µA
5.5 5.9 6.0 0 0.1 0.2
0 0.1 2.0 µA
29.5 29.9 30 V 20 40 60
= 2.0 V) A
COMP
1
ref
line
load
ref
IO IB
VOL
OH
OL
A
OSC
max
min
sync
p
OL
OH
f
OL
OL OH OH
OL
OH
OH
OL
Rds 0 2.0 10
lkg
0
0
kHz
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MC34271
100
1.0
DC
SWITC
O
T
T
D
T
C
CLE
0
ELECTRICAL CHARACTERISTICS (continued) (V
the operating ambient temperature range that applies, unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
AUXILIARY VOLTAGE OUTPUTS
V1, V2, V3, V4 Outputs
1–V1/V0 Ratio 0.0500 0.0520 0.0535 1–V2/V0 Ratio 0.1010 0.1035 0.1065
V3/V0 Ratio 0.1010 0.1035 0.1065
V4/V0 Ratio 0.0500 0.0520 0.0535 Output Resistance (I Output Short Circuit Current I
LOGIC INPUTS (EN1, EN2, MODE)
Input Low State V Input High State V Input Impedance R
SOFT START CONTROL (SS1,SS2)
Charge Current (Capacitor Voltage = 1.0 V to 4.0 V)
Discharge Current (Capacitor Voltage = 1.0 V) I
TOTAL SUPPLY CURRENT
VDD Current VDD = 6.0 V I
Standby Mode (EN1 = EN2 = 0) VDD = 16 V 3.0 15
VDD Current I
Backlight “On” (EN1 = 1; EN2 = 0)
VDD Current I
LCD “On” (No Inductor) (EN1 = 0; EN2 = 1)
VB Current (V0 = 35 V) I
NOTE: 1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
= 4.0 mA) R
source
= 6.0 V , for typical values TA = Low to High [Note 1], for min/max values TA is
DD
o
ss
IL
IH
in
I
chg
dschg
CC
CC
CC
O
20 40 60
5.0 10 20 mA
0 0.8 V
2.0 6.0 V 25 50 100 k
0.5 1.0 2.5 µA
250 650 µA
2.0 5.0 µA
0.7 3.0 mA
0.9 2.0 mA
1.2 3.0 mA
Y Y
U PU
U H
,
0.8
0.6
0.4
0.2
0
1.5
2.0 2.5 3.0 3.5 4.0 4.5 100 1.0 k 10 k 100 k 1000 k V
, COMPENSATION VOLTAGE (V)
Comp
Figure 1. Switch Output Duty Cycle versus
Compensation V oltage
VDD = 6.0 V TA = 25°C
80
60
40
20
, OPEN LOOP VOLTAGE GAIN (dB)
0
VOL
A
–20
10
Figure 2. Error Amp Open Loop Gain and
Gain
Phase
f, FREQUENCY (Hz)
Phase versus Frequency
VDD = 6.0 V V
Comp
RL = Open TA = 25°C
= 2.5 V
30
60
90
120
150
180
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