The MC14518B dual BCD counter and the MC14520B dual binary
counter are constructed with MOS P–channel and N–channel
enhancement mode devices in a single monolithic structure. Each
consists of two identical, independent, internally synchronous 4–stage
counters. The counter stages are type D flip–flops, with
interchangeable Clock and Enable lines for incrementing on either the
positive–going or negative–going transition as required when
cascading multiple stages. Each counter can be cleared by applying a
high level on the Reset line. In addition, the MC14518B will count out
of all undefined states within two clock periods. These complementary
MOS up counters find primary use in multi–stage synchronous or
ripple counting applications requiring low power dissipation and/or
high noise immunity.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Internally Synchronous for High Internal and External Speeds
• Logic Edge–Clocked Design — Incremented on Positive Transition
of Clock or Negative Transition on Enable
• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to V
SymbolParameterValueUnit
V
DD
Vin, V
Iin, I
P
T
T
stg
T
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/C From 65C To 125C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, V
to the range V
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either V
DC Supply Voltage Range–0.5 to +18.0V
Input or Output Voltage Range
out
out
D
A
L
(DC or Transient)
Input or Output Current
(DC or Transient) per Pin
Power Dissipation,
per Package (Note 3.)
Operating Temperature Range–55 to +125°C
Storage Temperature Range–65 to +150°C
Lead Temperature
(8–Second Soldering)
(Vin or V
SS
or VDD). Unused outputs must be left open.
SS
) VDD.
out
) (Note 2.)
SS
–0.5 to VDD + 0.5V
±10mA
500mW
260°C
and V
in
should be constrained
out
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MARKING
DIAGRAMS
16
PDIP–16
P SUFFIX
CASE 648
SOIC–16
DW SUFFIX
CASE 751G
SOEIAJ–16
F SUFFIX
CASE 966
A= Assembly Location
WL, L= Wafer Lot
YY, Y= Year
WW, W = Work Week
1. For ordering information on the EIAJ version of
the SOIC packages, please contact your local
ON Semiconductor representative.
Semiconductor Components Industries, LLC, 2000
August, 2000 – Rev. 4
1Publication Order Number:
MC14518B/D
MC14518B
PIN ASSIGNMENT
CLOCK
ENABLE
CLOCK
10
ENABLE
15
1
C
A
2
E
A
3
Q0
A
Q1
4
A
Q2
A
Q3
6
A
7
R
A
8
V
SS
BLOCK DIAGRAM
1
2
7
9
16
15
14
13
125
11
10
9
VDD = PIN 16
VSS = PIN 8
V
R
Q3
Q2
Q1
Q0
E
C
DD
B
B
B
B
B
B
B
Q0
3
4
Q1
C
Q2
5
6
Q3
R
11
Q0
12
Q1
C
R
Q2
Q3
13
14
TRUTH TABLE
ClockEnableResetAction
10Increment Counter
00Increment Counter
X0No Change
X0No Change
00No Change
10No Change
XX1Q0 thru Q3 = 0
X = Don’t Care
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2
MC14518B
V
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
DD
CharacteristicSymbol
Output Voltage“0” Level
V
= VDD or 0
in
“1” Level
V
= 0 or V
in
DD
Input Voltage“0” Level
= 4.5 or 0.5 Vdc)
(V
O
(V
= 9.0 or 1.0 Vdc)
O
(V
= 13.5 or 1.5 Vdc)
O
“1” Level
= 0.5 or 4.5 Vdc)
(V
O
(V
= 1.0 or 9.0 Vdc)
O
(V
= 1.5 or 13.5 Vdc)
O
Output Drive Current
(V
= 2.5 Vdc) Source
OH
= 4.6 Vdc)
(V
OH
(V
= 9.5 Vdc)
OH
(V
= 13.5 Vdc)
OH
(VOL = 0.4 Vdc) Sink
(V
= 0.5 Vdc)
OL
(V
= 1.5 Vdc)
OL
Input CurrentI
Input Capacitance
(V
= 0)
in
Quiescent Current
(Per Package)
Total Supply Current
(5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(C
= 50 pF on all outputs, all
L
Vdc
V
OL
5.0
10
15
V
OH
5.0
10
15
V
IL
5.0
10
15
V
IH
5.0
10
15
I
OH
5.0
5.0
10
15
I
OL
5.0
10
15
in
C
in
I
DD
15—± 0.1—±0.00001± 0.1—± 1.0µAdc
————5.07.5——pF
5.0
10
15
I
T
5.0
10
15
MinMaxMinTyp
—
—
—
4.95
9.95
14.95
—
—
—
3.5
7.0
11
– 3.0
– 0.64
– 1.6
– 4.2
0.64
1.6
4.2
—
—
—
)
SS
– 55C25C125C
(4.)
MaxMinMax
0.05
0.05
0.05
—
—
—
1.5
3.0
4.0
—
—
—
—
—
—
—
—
—
—
5.0
10
20
—
—
—
4.95
9.95
14.95
—
—
—
3.5
7.0
11
– 2.4
– 0.51
– 1.3
– 3.4
0.51
1.3
3.4
—
—
—
0
0
0
5.0
10
15
2.25
4.50
6.75
2.75
5.50
8.25
– 4.2
– 0.88
– 2.25
– 8.8
0.88
2.25
8.8
0.005
0.010
0.015
IT = (0.6 µA/kHz) f + I
IT = (1.2 µA/kHz) f + I
IT = (1.7 µA/kHz) f + I
0.05
0.05
0.05
—
—
—
1.5
3.0
4.0
—
—
—
—
—
—
—
—
—
—
5.0
10
20
DD
DD
DD
—
—
—
4.95
9.95
14.95
—
—
—
3.5
7.0
11
– 1.7
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
—
—
—
0.05
0.05
0.05
buffers switching)
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. The formulas given are for the typical characteristics only at 25C.
6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: I
is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
T
—
—
—
1.5
3.0
4.0
—
—
—
—
—
—
—
—
—
—
150
300
600
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
µAdc
µAdc
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3
MC14518B
SWITCHING CHARACTERISTICS
(7.)
(C
= 50 pF, T
L
= 25C)
A
All Types
100
50
40
280
115
80
330
130
90
100
50
35
2.5
6.0
8.0
—
—
—
220
100
70
125
55
40
– 45
– 15
– 5
(8.)
Max
200
100
80
560
230
160
650
230
170
—
—
—
1.5
3.0
4.0
15
5
4
—
—
—
—
—
—
—
—
—
CharacteristicSymbolV
Output Rise and Fall Time
t
, t
TLH
t
TLH
t
TLH
= (1.5 ns/pF) CL + 25 ns
THL
, t
= (0.75 ns/pF) CL + 12.5 ns
THL
, t
= (0.55 ns/pF) CL + 9.5 ns
THL
Propagation Delay Time
Clock to Q/Enable to Q
, t
t
PLH
t
PLH
t
PLH
= (1.7 ns/pF) CL + 215 ns
PHL
, t
= (0.66 ns/pF) CL + 97 ns
PHL
, t
= (0.5 ns/pF) CL + 75 ns
PHL
Reset to Q
t
= (1.7 ns/pF) CL + 265 ns
PHL
= (0.66 ns/pF) CL + 117 ns
t
PHL
t
= (0.66 ns/pF) CL + 95 ns
PHL
Clock Pulse Widtht
Clock Pulse Frequencyf
Clock or Enable Rise and Fall Timet
THL
Enable Pulse Widtht
Reset Pulse Widtht
Reset Removal Timet
t
TLH
t
THL
t
PLH
t
PHL
t
PHL
w(H)
t
w(L)
cl
, t
WH(E)
WH(R)
rem
,
,
TLH
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
5.0
10
15
DD
MinTyp
—
—
—
—
—
—
—
—
—
200
100
70
—
—
—
—
—
—
440
200
140
280
120
90
– 5
15
20
7. The formulas given are for the typical characteristics only at 25C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Unit
ns
ns
ns
ns
MHz
µs
ns
ns
ns
V
DD
C
L
20 ns
0.01 µF
CERAMIC
C
L
V
SS
C
L
C
L
500 µF
PULSE
GENERATOR
20 ns
50%
VARIABLE
C
E
R
I
D
90%
Q0
Q1
Q2
Q3
V
SS
10%
WIDTH
Figure 1. Power Dissipation Test Circuit and Waveform
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4
MC14518B
PULSE
GENERATOR
CLOCK
ENABLE
RESET
V
DD
20 ns
CLOCK
Q0
C
INPUT
Q1
Q2
E
Q3
R
V
SS
C
C
L
L
C
C
L
L
Figure 2. Switching Time Test Circuit and Waveforms
0987654321
Q0
20 ns
V
90%
DD
50%
10%
t
WH
t
PLHtPHL
t
WL
90%
Q
t
r
18
1716151413121110987654321
V
SS
50%
10%
t
f
0987654321
MC14518B
MC14520B
Q1
Q2
Q3
Q0
Q1
Q2
Q3
1312111098765432143
Figure 3. Timing Diagram
2
101514
http://onsemi.com
5
MC14518B
Q0Q1Q2Q3
D
Q
D
Q
D
Q
D
Q
RESET
ENABLE
CLOCK
Q
C
R
Q
C
R
Q
C
R
Figure 4. Decade Counter (MC14518B) Logic Diagram
(1/2 of Device Shown)
Q0Q1Q2Q3
D
Q
D
Q
D
Q
Q
C
R
D
Q
RESET
ENABLE
CLOCK
Q
C
R
Q
C
R
Q
C
R
Figure 5. Binary Counter (MC14520B) Logic Diagram
(1/2 of Device Shown)
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6
Q
C
R
PACKAGE DIMENSIONS
PLASTIC DIP PACKAGE
–A–
916
B
18
F
H
G
D
16 PL
0.25 (0.010)T
C
S
SEATING
–T–
PLANE
K
M
A
PLASTIC SOIC PACKAGE
MC14518B
PDIP–16
P SUFFIX
CASE 648–08
ISSUE R
J
M
SOIC–16
DW SUFFIX
CASE 751G–03
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
DIM MINMAXMINMAX
L
M
A 0.740 0.770 18.80 19.55
B 0.250 0.2706.356.85
C 0.145 0.1753.694.44
D 0.015 0.0210.390.53
F 0.0400.701.021.77
G0.100 BSC2.54 BSC
H0.050 BSC1.27 BSC
J 0.008 0.0150.210.38
K 0.110 0.1302.803.30
L 0.295 0.3057.507.74
M0 10 0 10
S 0.020 0.0400.511.01
MILLIMETERSINCHES
169
M
B
H8X
M
0.25
0.25B
14X
D
B16X
M
S
A
T
e
A
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
E
h X 45
81
B
S
A
L
A1
SEATING
PLANE
T
C
3. DIMENSIONS D AND E DO NOT INLCUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MINMAX
A2.352.65
A10.100.25
B0.350.49
C0.230.32
D 10.15 10.45
E7.407.60
e1.27 BSC
H 10.05 10.55
h0.250.75
L0.500.90
0 7
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7
169
1
Z
D
e
b
0.13 (0.005)
M
8
H
E
E
A
A
1
0.10 (0.004)
MC14518B
PACKAGE DIMENSIONS
SOEIAJ–16
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 966–01
ISSUE O
L
E
M
L
DETAIL P
VIEW P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
Q
1
c
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
MILLIMETERS
DIM MINMAXMINMAX
---2.05--- 0.081
A
A
0.050.20 0.002 0.008
1
0.350.50 0.014 0.020
b
0.180.27 0.007 0.011
c
9.90 10.50 0.390 0.413
D
5.105.45 0.201 0.215
E
1.27 BSC0.050 BSC
e
H
7.408.20 0.291 0.323
E
0.500.85 0.020 0.033
L
L
1.101.50 0.043 0.059
E
0
M
Q
0.700.90 0.028 0.035
1
---0.78--- 0.031
Z
INCHES
10
10
0
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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8
MC14518B/D
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